| [1] |
Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao. Establishment of Analytical Model for the Gate to Source Capacitance of Power MOSFET. Acta Physica Sinica,
2024, 0(0): .
doi: 10.7498/aps.73.20240144
|
| [2] |
Liu Jing, Dang Yue-Dong, Liu Hui-Ting, Zhao Yan. Novel dual-direction electrostatic discharge device with lateral PNP transistor. Acta Physica Sinica,
2022, 71(23): 238501.
doi: 10.7498/aps.71.20220824
|
| [3] |
Li Ming-Zhu, Cai Xiao-Wu, Zeng Chuan-Bin, Li Xiao-Jing, Li Duo-Li, Ni Tao, Wang Juan-Juan, Han Zheng-Sheng, Zhao Fa-Zhan. Effect of high-temperature on holding characteristics in MOSFET ESD protecting device. Acta Physica Sinica,
2022, 71(12): 128501.
doi: 10.7498/aps.71.20220172
|
| [4] |
Wang Yang, Zhao Ling-Ling. Viscoelastic relaxation time of the monoatomic Lennard-Jones system. Acta Physica Sinica,
2020, 69(12): 123101.
doi: 10.7498/aps.69.20200138
|
| [5] |
Ma Qun-Gang, Wang Hai-Hong, Zhang Sheng-Dong, Chen Xu, Wang Ting-Ting. Electro-static discharge protection analysis and design optimization of interlayer Cu interconnection in InGaZnO thin film transistor backplane. Acta Physica Sinica,
2019, 68(15): 158501.
doi: 10.7498/aps.68.20190646
|
| [6] |
Wang Xiang, Zhang Qiang, Chen Ran-Bin, Deng Zhi-Qiang, San Hai-Sheng. Radioisotope energy conversion using electrostatic vibrationto–to–electricity converters. Acta Physica Sinica,
2014, 63(2): 028501.
doi: 10.7498/aps.63.028501
|
| [7] |
Wang Yuan, Zhang Li-Zhong, Cao Jian, Lu Guang-Yi, Jia Song, Zhang Xing. Research on electrostatic discharge characteristics of tunnel field effect transistors. Acta Physica Sinica,
2014, 63(17): 178501.
doi: 10.7498/aps.63.178501
|
| [8] |
Wu Xiao-Peng, Yang Yin-Tang, Gao Hai-Xia, Dong Gang, Chai Chang-Chun. A compact model of substrate resistance for deep sub-micron gate grounded NMOS electrostatic discharge protection device. Acta Physica Sinica,
2013, 62(4): 047203.
doi: 10.7498/aps.62.047203
|
| [9] |
Gao Zhu-Xiu, Li Hong-Wei, Cai Ming-Hui, Liu Dan-Qiu, Huang Jian-Guo, Han Jian-Wei. Discharging of charged material initiated by impacting of hypervelocity small debris. Acta Physica Sinica,
2012, 61(3): 039601.
doi: 10.7498/aps.61.039601
|
| [10] |
Liu Yu-Dong, Du Lei, Sun Peng, Chen Wen-Hao. The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes. Acta Physica Sinica,
2012, 61(13): 137203.
doi: 10.7498/aps.61.137203
|
| [11] |
Qu Jiang-Tao, Zhang He-Ming, Qin Shan-Shan, Xu Xiao-Bo, Wang Xiao-Yan, Hu Hui-Yong. Study of physically modeling for small-scaled strained Si nMOSFET. Acta Physica Sinica,
2011, 60(9): 098501.
doi: 10.7498/aps.60.098501
|
| [12] |
Zhang Zhi-Quan, Zhang Yi-Fei, Zhou Li-Wei, Gong Hui. Paraxial electron optics and its spatial-temporal aberrations for a bi-electrode concentric spherical system with electrostatic focusing. Acta Physica Sinica,
2010, 59(8): 5459-5466.
doi: 10.7498/aps.59.5459
|
| [13] |
Zhang Zhi-Quan, Zhang Yi-Fei, Zhou Li-Wei, Gong Hui. Imaging electron-optics and spatial-temporal aberrations for a bi-electrode spherical concentric system with electrostatic focusing. Acta Physica Sinica,
2010, 59(8): 5450-5458.
doi: 10.7498/aps.59.5450
|
| [14] |
Huang Jian-Guo, Han Jian-Wei. Analysis of a typical internal charging induced spacecraft anomaly. Acta Physica Sinica,
2010, 59(4): 2907-2913.
doi: 10.7498/aps.59.2907
|
| [15] |
Zhang Bing, Chai Chang-Chun, Yang Yin-Tang. Effect of distances from source or drain to the gate on the robustness of sub-micron ggNMOS ESD protection circuit. Acta Physica Sinica,
2010, 59(11): 8063-8070.
doi: 10.7498/aps.59.8063
|
| [16] |
YANG JI-CHUN, WU QIN-YI, YE CHAO-HUI. DIRECT MEASUREMENT OF MULTIPLE QUANTUM RELAXATION TIME IN AX SYSTEM. Acta Physica Sinica,
1986, 35(1): 74-81.
doi: 10.7498/aps.35.74
|
| [17] |
QIU YUN-QING, XIA MENG-FEN. THE EFFECTS OF STOCHASTIC MAGNETIC FIELD ON THE VELOCITY DIFFUSION DRIVEN BY ELECTROSTATIC WAVES. Acta Physica Sinica,
1984, 33(5): 678-683.
doi: 10.7498/aps.33.678
|
| [18] |
LIU DA-JAHN, CHEN GIAO-FONG. SPIN-LATTICE RELAXATION AND CONCENTRATION EFFECTS OF Cr3+ IN RUBY. Acta Physica Sinica,
1966, 22(2): 183-187.
doi: 10.7498/aps.22.183
|
| [19] |
. . Acta Physica Sinica,
1966, 22(1): 125-126.
doi: 10.7498/aps.22.125
|
| [20] |
SZE SHIH-YUAN, CHANG KOU-HWAN. ON THE RELAXATION TIME OF ISOTHERMAL ORDERING PROCESS IN AuCu3. Acta Physica Sinica,
1956, 12(1): 80-82.
doi: 10.7498/aps.12.80
|
下载:
