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Calculation of exciton energies and binding energies in ZnO film

Xiong Wen Zhao Hua

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Calculation of exciton energies and binding energies in ZnO film

Xiong Wen, Zhao Hua
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  • In this paper, a coupled 6×6 Hamiltonian valence eigenfunction is considered using effective mass approximation. Using a trial wave function separable in z direction and x-y plane, variational calculations are presented for energies of ground state and first excited state of heavy hole exciton and binding energies in ZnO film, and for radius of exciton under a variety of thickness d of ZnO film. And the correction of energies due to quantum tunnel effect of electronic wave function with the thickness d<2.0 nm is discussed.
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  • Abstract views:  9482
  • PDF Downloads:  2033
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Publishing process
  • Received Date:  30 April 2006
  • Accepted Date:  10 July 2006
  • Published Online:  05 January 2007

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