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Investigation of snapback stress induced gate oxide defect for NMOSFET’s in 90 nm technology

Zhu Zhi-Wei Hao Yue Ma Xiao-Hua Cao Yan-Rong Liu Hong-Xia

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Investigation of snapback stress induced gate oxide defect for NMOSFET’s in 90 nm technology

Zhu Zhi-Wei, Hao Yue, Ma Xiao-Hua, Cao Yan-Rong, Liu Hong-Xia
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  • Abstract views:  8152
  • PDF Downloads:  2317
  • Cited By: 0
Publishing process
  • Received Date:  19 June 2006
  • Accepted Date:  06 July 2006
  • Published Online:  05 January 2007

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