Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Research of breakdown characteristic of InP composite channel HEMT

Li Xiao Zhang Hai-Ying Yin Jun-Jian Liu Liang Xu Jing-Bo Li Ming Ye Tian-Chun Gong Min

Citation:

Research of breakdown characteristic of InP composite channel HEMT

Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • Density gradient quantum model has been used to analyse the breakdown characteristic of InP-based composite channel HEMT(high electron mobility transistor). The collision ionization in composite channel and quantum effect has been taken into consideration. We payed great attention to the relationship of on-state breakdown voltage with respect to the thickness of In0.7Ga0.3As channel, and promoted a method to enhance the on-state breakdown voltage. A commercial 2D-device simulation program. Sentaurus has been used to simulate the on-state breakdown voltage of the device. A comparison has been made between the result of simulated and measured data. The result shows that with the reduction of the thickness of In0.7Ga0.3As channel, on-state breakdown voltage of the device will be enhanced greatly without reducing saturation current, which has a significant meaning for promoting the power performance of InP-based HEMT.
Metrics
  • Abstract views:  8222
  • PDF Downloads:  1381
  • Cited By: 0
Publishing process
  • Received Date:  14 November 2006
  • Accepted Date:  24 November 2006
  • Published Online:  20 July 2007

/

返回文章
返回