| [1] |
Li Yan, Chen Xin-Li, Wang Wei-Sheng, Shi Zhi-Wen, Zhu Li-Qiang. Egg shell membrane based electrolyte gated oxide neuromorphic transistor. Acta Physica Sinica,
2023, 72(15): 157302.
doi: 10.7498/aps.72.20230411
|
| [2] |
Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang. Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica,
2023, 72(4): 048503.
doi: 10.7498/aps.72.20221831
|
| [3] |
Li Xue, Cao Bao-Long, Wang Ming-Hao, Feng Zeng-Qin, Chen Shu-Fen. Perovskite light-emitting diode based on combination of modified hole-injection layer and polymer composite emission layer. Acta Physica Sinica,
2021, 70(4): 048502.
doi: 10.7498/aps.70.20201379
|
| [4] |
Wu Jia-Long, Dou Yong-Jiang, Zhang Jian-Feng, Wang Hao-Ran, Yang Xu-Yong. Perovskite light-emitting diodes based on solution-processed metal-doped nickel oxide hole injection layer. Acta Physica Sinica,
2020, 69(1): 018101.
doi: 10.7498/aps.69.20191269
|
| [5] |
Gao Cheng-Hao, Xu Feng, Zhang Li, Zhao De-Sheng, Wei Xing, Che Ling-Juan, Zhuang Yong-Zhang, Zhang Bao-Shun, Zhang Jing. Ion implantation isolation based micro-light-emitting diode device array properties. Acta Physica Sinica,
2020, 69(2): 027802.
doi: 10.7498/aps.69.20191418
|
| [6] |
Huang Wei, Li Yue-Long, Ren Hui-Zhi, Wang Peng-Yang, Wei Chang-Chun, Hou Guo-Fu, Zhang De-Kun, Xu Sheng-Zhi, Wang Guang-Cai, Zhao Ying, Yuan Ming-Jian, Zhang Xiao-Dan. Perovskite light-emitting diodes based on n-type nanocrystalline silicon oxide electron injection layer. Acta Physica Sinica,
2019, 68(12): 128103.
doi: 10.7498/aps.68.20190258
|
| [7] |
Guo Li-Qiang, Tao Jian, Wen Juan, Cheng Guang-Gui, Yuan Ning-Yi, Ding Jian-Ning. Corn starch solid electrolyte gated proton/electron hybrid synaptic transistor. Acta Physica Sinica,
2017, 66(16): 168501.
doi: 10.7498/aps.66.168501
|
| [8] |
Liu Bo-Zhi, Li Rui-Feng, Song Ling-Yun, Hu Lian, Zhang Bing-Po, Chen Yong-Yue, Wu Jian-Zhong, Bi Gang, Wang Miao, Wu Hui-Zhen. QD-LED devices using ZnSnO as an electron-transporting layer. Acta Physica Sinica,
2013, 62(15): 158504.
doi: 10.7498/aps.62.158504
|
| [9] |
Liu Bai-Quan, Lan Lin-Feng, Zou Jian-Hua, Peng Jun-Biao. A novel organic light-emitting diode by utilizing double hole injection layer. Acta Physica Sinica,
2013, 62(8): 087302.
doi: 10.7498/aps.62.087302
|
| [10] |
Wang Bing, Li Zhi-Cong, Yao Ran, Liang Meng, Yan Fa-Wang, Wang Guo-Hong. Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED. Acta Physica Sinica,
2011, 60(1): 016108.
doi: 10.7498/aps.60.016108
|
| [11] |
Li Chun, Peng Jun-Biao, Zeng Wen-Jin. Organic red light-emitting diodes with a soluble luminescent compound and a novel TPBI/Ag cathode. Acta Physica Sinica,
2009, 58(3): 1992-1996.
doi: 10.7498/aps.58.1992
|
| [12] |
Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica,
2009, 58(10): 7189-7193.
doi: 10.7498/aps.58.7189
|
| [13] |
Huang Wen-Bo, Zeng Wen-Jin, Wang Li, Peng Jun-Biao. Negative capacitance in polymer light-emitting diodes. Acta Physica Sinica,
2008, 57(9): 5983-5988.
doi: 10.7498/aps.57.5983
|
| [14] |
Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di. Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness. Acta Physica Sinica,
2008, 57(2): 1220-1223.
doi: 10.7498/aps.57.1220
|
| [15] |
Zhang Jian-Ming, Zou De-Shu, Liu Si-Nan, Xu Chen, Shen Guang-Di. A novel AlGaInP thin-film light emitting diode with omni directional reflector. Acta Physica Sinica,
2007, 56(5): 2905-2909.
doi: 10.7498/aps.56.2905
|
| [16] |
Sun Hui, Zhang Qi-Feng, Wu Jin-Lei. Ultraviolet light emitting diode based on ZnO nanowires. Acta Physica Sinica,
2007, 56(6): 3479-3482.
doi: 10.7498/aps.56.3479
|
| [17] |
Huang Wen-Bo, Peng Jun-Biao. Carrier injection process of polymer light-emitting diodes. Acta Physica Sinica,
2007, 56(5): 2974-2978.
doi: 10.7498/aps.56.2974
|
| [18] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica,
2006, 55(3): 1424-1429.
doi: 10.7498/aps.55.1424
|
| [19] |
Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang. Noise as a representation for reliability of light emitting diode. Acta Physica Sinica,
2006, 55(3): 1384-1389.
doi: 10.7498/aps.55.1384
|
| [20] |
Xia Lian-Sheng, Wang Meng, Huang Zi-Ping, Zhang Kai-Zhi, Shi Jin-Shui, Zhang Lin-Wen, Deng Jian-Jun. Explosion of cathode plasma in intense multi-beams electron vacuum diode. Acta Physica Sinica,
2004, 53(10): 3435-3439.
doi: 10.7498/aps.53.3435
|
下载:
