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2023, 72(16): 167101.
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Lu Jia, Gan Yu-Lin, Yan Lei, Ding Hong. Infinite magnetoresistance of EuS/Ta heterostructure. Acta Physica Sinica,
2021, 70(4): 047401.
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2021, 70(7): 077201.
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2014, 63(8): 080202.
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2012, 61(16): 160503.
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2012, 61(16): 166101.
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2012, 61(23): 237302.
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2012, 61(5): 057802.
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Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke. The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica,
2011, 60(4): 047101.
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Zhou Jun, Di Ming-Dong, Sun Tie-Tun, Sun Yong-Tang, Wang Hao. Effects of substrate resistivity and interface defect density on performance of solar cell with silicon heterojunctions. Acta Physica Sinica,
2010, 59(12): 8870-8876.
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Zhang Jin-Cheng, Zheng Peng-Tian, Dong Zuo-Dian, Duan Huan-Tao, Ni Jin-Yu, Zhang Jin-Feng, Hao Yue. The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure. Acta Physica Sinica,
2009, 58(5): 3409-3415.
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Zhang Jin-Cheng, Dong Zuo-Dian, Qin Xue-Xue, Zheng Peng-Tian, Liu Lin-Jie, Hao Yue. Analysis of the leakage current in GaN-based heterostructure buffer layer. Acta Physica Sinica,
2009, 58(3): 1959-1965.
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2009, 58(7): 4925-4930.
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Wang Xin-Juan, Zhang Jin-Feng, Zhang Jin-Cheng, Hao Yue. Analysis of structure parameters and current conduction mechanisms of AlGaN/GaN Schottky contacts. Acta Physica Sinica,
2008, 57(5): 3171-3175.
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Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
2006, 55(11): 6085-6089.
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Yao Wei, Qiu Zhi-Jun, Gui Yong-Sheng, Zheng Ze-Wei, Lü Jie, Tang Ning, Shen Bo, Chu Jun-Hao. Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure. Acta Physica Sinica,
2005, 54(5): 2247-2251.
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2004, 53(2): 596-600.
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Li Pei-Xian, Hao Yue, Fan Long, Zhang Jin-Cheng, Zhang Jin-Feng, Zhang Xiao-Ju. AlGaN/GaN heterojunction wavefunction half analytic model based on quantum distu rbance. Acta Physica Sinica,
2003, 52(12): 2985-2988.
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2001, 50(9): 1774-1778.
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