MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector

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MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector

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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou

Acta Phys. Sin., 2007, 56(11): 6717-6721.

Abstract
High quality AlGaN materials used in the DBR structure of ultraviolet detector are grown under different growth conditions. The structure, composition and photographic characteristics are determined by XRD, SEM and AFM. The influence of the growth conditions on the characteristics of the AlGaN materials are discussed.The good performance of the DBR structure of ultraviolet detector is obtained.

Keywords:
AlGaN /

DBR /

ultraviolet detector /

MOCVD
Authors and contacts
Xie Zi-Li,

Zhang Rong,

Xiu Xiang-Qian,

Han Ping,

Liu Bin,

Chen Lin,

Yu Hui-Qiang,

Jiang Ruo-Lian,

Shi Yi,

Zheng You-Dou

1.
江苏省光电功能材料重点实验室,南京大学物理系,南京 210093
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