Single electron pumping at higher frequency in a novel semiconductor-based quantum dot device

Li Ling; Kaestner B; Blumenthal M D; Giblin S; Janssen T J B M; Pepper M; Anderson D; Jones G; Ritchie D A; Gao Jie

doi:10.7498/aps.57.1878

Abstract
The π-shift sinusoidal signals with different amplitudes applied directly to the two metallic finger gates on a shallow etched GaAs/AlGaAs quantum wire，tune unequally the two barriers of a static quantum dot induced by applying negative dc voltages on these two finger gates. Single electrons are transported through a periodically formed quantum dot without source-drain bias. Since single electron pumping in the novel semiconductor-based quantum dot device does not rely on Coulomb blockade of tunnelling，the device can not be limited to much lower frequency by the fixed tunneling time constant. Current plateaus due to single electron transport can be observed at 1.7K with frequencies up to 3GHz and a current level of 0.5nA. This novel device represents another possible path in the realization of a high current high accuracy quantum standard for electrical current，and also provides another means for high specd high accuracy transport of single electrons.

Keywords:
single electron transport /

single electron turnstile /

single electron pumping /

quantized current plateau
Authors and contacts
Li Ling⁶,

Kaestner B⁴,

Blumenthal M D³,

Giblin S²,

Janssen T J B M²,

Pepper M¹,

Anderson D¹,

Jones G¹,

Ritchie D A¹,

Gao Jie⁵

(1)Cavendish Laboratory，University of Cambridge，Cambridge CB3 0HE，UK; (2)National Physical Laboratory，Hampton Road，Teddington TW11 0LW，UK; (3)National Physical Laboratory，Hampton Road，Teddington TW11 0LW，UK；Cavendish Laboratory，University of Cambridge，Cambridge CB3 0HE，UK; (4)Physikalisch-Technische Bundesanstalt，38100 Braunschweig，Germany; (5)四川大学物理科学与技术学院，成都 610064; (6)四川大学物理科学与技术学院，成都 610064；四川师范大学物理学院与固体物理研究所，成都 610066
References

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Vol. 57, Issue 3 - 2008-02-05

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