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Fabrication of high voltage thyristor based on silicon organic compounds and metal oxides type isolation protective material

Liu Xiu-Xi Wang Gong-Tang

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Fabrication of high voltage thyristor based on silicon organic compounds and metal oxides type isolation protective material

Liu Xiu-Xi, Wang Gong-Tang
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  • Abstract views:  6961
  • PDF Downloads:  1295
  • Cited By: 0
Publishing process
  • Received Date:  28 April 2007
  • Accepted Date:  29 May 2007
  • Published Online:  15 January 2008

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