Two-dimensional particle-in-cell simulation of the ion sheath dynamics in plasma source ion implantation of a hemispherical bowl-shaped target

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Abstract
Plasma source ion implantation into a hemispherical bowl-shaped target is simulated by the two-dimensional particle-in-cell method. The numerical procedure is based on solving the Poisson's equation on a grid and tracing the movement of the ions through the grid. The potential and the ion density distributions in the sheath are studied in detail and the trajectories and dynamic states of ions are considered. The implantation dose and impact angle of the ions at different parts of the target surface are obtained. The ion focusing effect due to the nonuniformity of the sheath potential near the brim of the vessel is observed. The results presented here show that the ion focusing causes the nonuniformity of dose on the target surface.

Keywords:
plasma source ion implantation /

ion sheath /

two-dimensional particle-in-cell model /

ion trajectory
Authors and contacts
Liu Cheng-Sen²,

Wang De-Zhen¹,

Liu Tian-Wei³,

Wang Yan-Hui¹

(1)大连理工大学物理与光电工程学院，三束材料改性国家重点实验室,大连 116023; (2)辽宁师范大学物理与电子技术学院,大连 116029; (3)中国工程物理研究院表面物理与化学国家重点实验室,绵阳 621900
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