| [1] |
Liu Yuan-Feng, Li Bin-Cheng, Zhao Bin-Xing, Liu Hong. Detection of subsurface defects in silicon carbide bulk materials with photothermal radiometry. Acta Physica Sinica,
2023, 72(2): 024208.
doi: 10.7498/aps.72.20221303
|
| [2] |
Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin. First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica,
2022, 71(5): 058102.
doi: 10.7498/aps.71.20211796
|
| [3] |
Huang Ling-Qin, Zhu Jing, Ma Yue, Liang Ting, Lei Cheng, Li Yong-Wei, Gu Xiao-Gang. Research status and progress of metal contacts of SiC power devices. Acta Physica Sinica,
2021, 70(20): 207302.
doi: 10.7498/aps.70.20210675
|
| [4] |
Yu Zi-Heng, Ma Chun-Hong, Bai Shao-Xian. Effect of sharp edge of ring-groove-structures in SiC surface. Acta Physica Sinica,
2021, 70(4): 044702.
doi: 10.7498/aps.70.20201303
|
| [5] |
Wang Su-Jie, Li Shu-Qiang, Wu Xiao-Ming, Chen Fang, Jiang Feng-Yi. Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP. Acta Physica Sinica,
2020, 69(4): 048103.
doi: 10.7498/aps.69.20191720
|
| [6] |
Huang Yi-Hua, Jiang Dong-Liang, Zhang Hui, Chen Zhong-Ming, Huang Zheng-Ren. Ferromagnetism of Al-doped 6H-SiC and theoretical calculation. Acta Physica Sinica,
2017, 66(1): 017501.
doi: 10.7498/aps.66.017501
|
| [7] |
Lu Wu-Yue, Zhang Yong-Ping, Chen Zhi-Zhan, Cheng Yue, Tan Jia-Hui, Shi Wang-Zhou. Effect of different annealing treatment methods on the Ni/SiC contact interface properties. Acta Physica Sinica,
2015, 64(6): 067303.
doi: 10.7498/aps.64.067303
|
| [8] |
Huang Ya-Ping, Yun Feng, Ding Wen, Wang Yue, Wang Hong, Zhao Yu-Kun, Zhang Ye, Guo Mao-Feng, Hou Xun, Liu Shuo. The reflectivity and ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN. Acta Physica Sinica,
2014, 63(12): 127302.
doi: 10.7498/aps.63.127302
|
| [9] |
Yang Shuai, Tang Xiao-Yan, Zhang Yu-Ming, Song Qing-Wen, Zhang Yi-Men. Influence of charge imbalance on breakdown voltage of 4H-SiC semi-superjunction VDMOSFET. Acta Physica Sinica,
2014, 63(20): 208501.
doi: 10.7498/aps.63.208501
|
| [10] |
Song Kun, Chai Chang-Chun, Yang Yin-Tang, Zhang Xian-Jun, Chen Bin. Improvement in breakdown characteristics of 4H-SiC MESFET with a gate-drain surface epi-layer and optimization of the structure. Acta Physica Sinica,
2012, 61(2): 027202.
doi: 10.7498/aps.61.027202
|
| [11] |
Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai. Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica,
2011, 60(9): 098108.
doi: 10.7498/aps.60.098108
|
| [12] |
Zhao Cheng-Li, Lü Xiao-Dan, Ning Jian-Ping, Qing You-Min, He Ping-Ni, Gou Fu-Jun. Molecular dynamics simulations of energy effectson atorn F interaction with SiC(100). Acta Physica Sinica,
2011, 60(9): 095203.
doi: 10.7498/aps.60.095203
|
| [13] |
Wang Guang-Xu, Jiang Feng-Yi, Feng Fei-Fei, Liu Jun-Lin, Qiu Chong. N-polar n-type ohmic contact of GaN-based LED on Si substrate. Acta Physica Sinica,
2010, 59(8): 5706-5709.
doi: 10.7498/aps.59.5706
|
| [14] |
Zhang Yun, Shao Xiao-Hong, Wang Zhi-Qiang. A first principle study on p-type doped 3C-SiC. Acta Physica Sinica,
2010, 59(8): 5652-5660.
doi: 10.7498/aps.59.5652
|
| [15] |
Huang Wei, Chen Zhi-Zhan, Chen Yi, Shi Er-Wei, Zhang Jing-Yu, Liu Qing-Feng, Liu Qian. Effect of Ni thickness on the contact properties of Ni/6H-SiC analyzed by combinatorial method. Acta Physica Sinica,
2010, 59(5): 3466-3472.
doi: 10.7498/aps.59.3466
|
| [16] |
Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa. The study of optimal fitting parameter for C 1s spectra of SiC surface. Acta Physica Sinica,
2008, 57(7): 4125-4129.
doi: 10.7498/aps.57.4125
|
| [17] |
Ding Zhi-Bo, Wang Kun, Chen Tian-Xiang, Chen Di, Yao Shu-De. Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time. Acta Physica Sinica,
2008, 57(4): 2445-2449.
doi: 10.7498/aps.57.2445
|
| [18] |
Ma Ge-Lin, Zhang Yu-Ming, Zhang Yi-Men, Ma Zhong-Fa. Study on the chemical states of the surface of SiC epilayer. Acta Physica Sinica,
2008, 57(7): 4119-4124.
doi: 10.7498/aps.57.4119
|
| [19] |
Gao Jin-Xia, Zhang Yi-Men, Tang Xiao-Yan, Zhang Yu-Ming. Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET. Acta Physica Sinica,
2006, 55(6): 2992-2996.
doi: 10.7498/aps.55.2992
|
| [20] |
Shang Ye-Chun, Liu Zhong-Li, Wang Shu-Rui. Study on the reverse characteristics of Ti/6H-SiC Schottky contacts. Acta Physica Sinica,
2003, 52(1): 211-216.
doi: 10.7498/aps.52.211
|
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