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Effect of different effective mass and electric field on the electronic structure in GaN/AlxGa1-xN spherical quantum dot

Wu Hui-Ting Wang Hai-Long Jiang Li-Ming

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Effect of different effective mass and electric field on the electronic structure in GaN/AlxGa1-xN spherical quantum dot

Wu Hui-Ting, Wang Hai-Long, Jiang Li-Ming
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  • In this paper,we have calculated the impurity electronic states and the binding energy with the variation of the quantum dot radius and Al content in GaN/AlxGa1-xN spherical quantum dot (QD) using the plane wave method. The modification of the energy states is discussed when the difference in effective electron mass in GaN and AlxGa1-xN is taken into account. The results show that the difference in effective mass can not be neglected when Al content is large. In addition,with the consideration of the difference in effective mass,we investigate the binding energy as function of quantum dot radius, impurity position and external electric field. The results are meaningful and can be widely applied in the design of optoelectronic devices.
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  • Abstract views:  7089
  • PDF Downloads:  1199
  • Cited By: 0
Publishing process
  • Received Date:  20 May 2008
  • Accepted Date:  23 July 2008
  • Published Online:  20 January 2009

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