Localized electron state on porous silicon quantum dots

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名

邮箱

手机号码

标题

留言内容

验证码

Abstract
Porous silicon can be fabricated by laser irradiation and annealing. The center wavelength of photoluminescence （PL） band is pinned in the region of 700—780 nm and its intensity increases obviously after oxidation of the sample. It was found that the PL intensity changes with time of laser irradiation and annealing. Calculation shows that some localized states appear in the band gap of the smaller nanocrystal when SiO bonds or Si—O—Si bonds are passivated on the surface. It was discovered that the number of SiO bonds or Si—O—Si bonds, which are related to irradiation and annealing time, obviously affects the generation of localized gap states.

Keywords:
porous silicon quantum dot /

passivated bond /

localized gap state
Authors and contacts
Huang Wei-Qi¹,

Wang Xiao-Yun¹,

Zhang Rong-Tao¹,

Yu Shi-Qiang¹,

Qin Chao-Jian²

(1)贵州省光电子技术与应用重点实验室,贵州大学，贵州 550025; (2)中国科学院地球化学研究所，贵阳 550003
References

Cited By

留言板