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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui. Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica,
2013, 62(11): 117103.
doi: 10.7498/aps.62.117103
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan. Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica,
2011, 60(12): 127901.
doi: 10.7498/aps.60.127901
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun. Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica,
2010, 59(2): 1258-1262.
doi: 10.7498/aps.59.1258
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Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di. Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica,
2010, 59(2): 1233-1236.
doi: 10.7498/aps.59.1233
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Zhang Li-Qing, Zhang Chong-Hong, Yang Yi-Tao, Yao Cun-Feng, Sun You-Mei, Li Bing-Sheng, Zhao Zhi-Ming, Song Shu-Jian. Surface morphology of GaN bombarded by highly charged 126Xeq+ ions. Acta Physica Sinica,
2009, 58(8): 5578-5584.
doi: 10.7498/aps.58.5578
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Zhou Mei, Chang Qing-Ying, Zhao De-Gang. A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica,
2008, 57(4): 2548-2553.
doi: 10.7498/aps.57.2548
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Feng Qian, Hao Yue, Yue Yuan-Zheng. Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film. Acta Physica Sinica,
2008, 57(3): 1886-1890.
doi: 10.7498/aps.57.1886
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Lü Ling, Gong Xin, Hao Yue. Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica,
2008, 57(2): 1128-1132.
doi: 10.7498/aps.57.1128
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Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
doi: 10.7498/aps.57.4570
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Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica,
2007, 56(9): 5513-5517.
doi: 10.7498/aps.56.5513
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Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie. Relation between breakdown voltage and current collapse in GaN FP-HEMTs. Acta Physica Sinica,
2007, 56(5): 2900-2904.
doi: 10.7498/aps.56.2900
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Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing. Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica,
2007, 56(6): 3453-3457.
doi: 10.7498/aps.56.3453
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Study on optical properties of Er/Er+O doped GaN thin films. Acta Physica Sinica,
2007, 56(3): 1621-1626.
doi: 10.7498/aps.56.1621
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica,
2006, 55(3): 1407-1412.
doi: 10.7498/aps.55.1407
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Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De. Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica,
2006, 55(5): 2476-2481.
doi: 10.7498/aps.55.2476
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Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming. Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica,
2005, 54(11): 5450-5454.
doi: 10.7498/aps.54.5450
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Ou Gu-Ping, Song Zhen, Gui Wen-Ming, Zhang Fu-Jia. Surface analysis of LiBq4/ITO and LiBq4/CuPc/ITO using atomic force microscopy and x-ray photoelectron spectroscopy. Acta Physica Sinica,
2005, 54(12): 5717-5722.
doi: 10.7498/aps.54.5717
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Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua. A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica,
2005, 54(9): 4273-4278.
doi: 10.7498/aps.54.4273
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Zhang Xiang-Jun, Meng Yong-Gang, Wen Shi-Zhu. On micro scanning forces under the coupling deformation of atomic force microscope probe. Acta Physica Sinica,
2004, 53(3): 728-733.
doi: 10.7498/aps.53.728
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Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin. Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica,
2004, 53(4): 1171-1176.
doi: 10.7498/aps.53.1171
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