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Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells

Song Ying-Xin Zheng Wei-Min Liu Jing Chu Ning-Ning Li Su-Mei

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Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells

Song Ying-Xin, Zheng Wei-Min, Liu Jing, Chu Ning-Ning, Li Su-Mei
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  • Using far-infrared time-resolved spectroscopy,we have investigated the effect of quantum-well confinement on the lifetime of shallow acceptor states in GaAs/AlAs multiple quantum wells with Be δ-doping. Low-temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of Be acceptor states from the ground state to the first three odd-parity excited states,respectively. It is found that the lifetime of excited states is monotonically reduced with decreasing quantum-well width,from 350 ps in bulk to 55 ps in a 100 ? well. We suggest that the effect of quantum-well confinement on zone-fold acoustic-phonon modes increases the intra-acceptor scattering rate of acoustic-phonon-assisted relaxation.
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Publishing process
  • Received Date:  04 December 2008
  • Accepted Date:  13 February 2009
  • Published Online:  20 September 2009

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