Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Structural, optical and electrical properties of Ga2(1-x)In2xO3 films prepared by metalorganic chemical vapor deposition

Yang Fan Ma Jin Kong Ling-Yi Luan Cai-Na Zhu Zhen

Citation:

Structural, optical and electrical properties of Ga2(1-x)In2xO3 films prepared by metalorganic chemical vapor deposition

Yang Fan, Ma Jin, Kong Ling-Yi, Luan Cai-Na, Zhu Zhen
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • Ga2(1-x)In2xO3(x=01—09) thin films were prepared on α-Al2O3 (0001) substrates by metalorganic chemical vapor deposition (MOCVD). The structure, the optical and electrical properties as well as the effect of annealing on the properties of the films were investigated in detail. The results indicate that the film deposited with composition x=02 was polycrystalline with β-Ga2O3 structure, the film with x=05 was amorphous and transformed into body-centered cubic (bcc) structure of In2O3 with a preferred orientation of (222) after annealing. For x=08, the obtained film showed bcc structure of In2O3 and the crystalinity was improved after annealing treatment. The average transmittance for the films in the visible range was over 85%. The band-gap of the Ga2(1-x)In2xO3 films can be suitably tuned from 376 to 443 eV by controlling the gallium content and it is increased obviously by annealing.
Metrics
  • Abstract views:  7138
  • PDF Downloads:  927
  • Cited By: 0
Publishing process
  • Received Date:  22 October 2008
  • Accepted Date:  16 February 2009
  • Published Online:  05 May 2009

/

返回文章
返回