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The detailed core structures of misfit dislocations in the AlSb/GaAs（001） heterostructure system were studied by 200 kV LaB6 filament high-resolution electron microscope. In combination with image deconvolution, the［110］ images were transformed into the projected structure maps, and the image resolution was enhanced up to the information limit of the microscope. To distinguish Al and Sb atoms in the AlSb film, the image contrast change with the sample thickness was analyzed for the perfect region in deconvoluted image, and the positions of Al and Sb atoms in the dumbbells were determined based on the image contrast theory of the pseudo-weak-phase object approximation. Then the structure models of two types of misfit dislocations were constructed. As the simulated images are in good agreement with the experimental images, the AlAs type interface and the core structures of obtained Lomer and 60° misfit dislocations were determined.
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Keywords:
- high-resolution electron microscopic image /
- image deconvolution /
- interface /
- misfit dislocation
[1] ［1］Kroemer H 2004 Physica E 20 196
[2] ［2］Subbanna S, Gaines J, Tuttle G, Kroemer H, Chalmers S, English J H 1989 J. Vac. Sci. Technol. B 7 289
[3] ［3］Kim H S, Noh Y K, Kim M D, Kwon Y J, Oh J E, Kim Y H, Lee J Y, Kim S G, Chung K S 2007 J. Cryst. Growth 301-302 230［4］Lomer W M 1951 Philos. Mag. 42 1327
[4] ［5］Marshall A F, Aubertine D B, Nix W D, McIntyre P C 2005 J. Mater. Res. 20 447
[5] ［6］Tillmann K, Houben L, Thust A 2006 Philos. Mag. 86 4589
[6] ［7］Qian W, Skowronski M, Kaspi R, de Graef M, Dravid V P 1997 J. Appl. Phys. 81 7268
[7] ［8］Jallipalli A, Balakrishnan G, Huang S H, Khoshakhlagh A, Dawson L R, Huffaker D L 2007 J. Cryst. Growth 303 449
[8] ［9］Trampert A, Tournie E, Ploog K H 1995 Appl. Phys. Lett. 66 2265
[9] ］Chen F R, Kai J J, Chang L, Wang J Y, Chen W J 1999 J. Electron Microsc. 48 827
[10] ］He W Z, Li F H, Chen H, Kawasaki K, Oikawa T 1997 Ultramicroscopy 70 1
[11] ］Wang D, Zou J, He W Z, Chen H, Li F H, Kawasaki K, Oikawa T 2004 Ultramicroscopy 98 259
[12] ］Wang D, Chen H, Li F H, Kawasaki K, Oikawa T 2002 Ultramicroscopy 93 139
[13] ］Scherzer O 1949 J. Appl. Phys. 20 20
[14] ］Han F S, Fan H F, Li F H 1986 Acta Crystallogr. A 42 353
[15] ］Hu J J, Li F H 1991 Ultramicroscopy 35 339
[16] ］Li F H, Wang D, He W Z, Jiang H 2000 J. Electron Microsc. 49 17
[17] ］Tang C Y, Li F H, Wang R, Zou J, Zheng X H, Liang J W 2007 Phys. Rev. B 75 184103
[18] ］Li F H, Tang D 1985 Acta Crystallogr. A 41 376
[19] ］Thon F 1966 Z. Naturforsch. 210 476
[20] ］Hornstra J 1958 J. Phys. Chem. Solids 5 129
[21] ］Vila A, Cornet A, Morante J R, Ruterana P, Loubradou M, Bonnet R, Gonzalez Y, Gonzalez L 1995 Philos. Mag. A 71 85
[22] ］Lopatin S, Pennycook S J, Narayan J, Duscher G 2002 Appl. Phys. Lett. 81 2728
[23] ］Hull D, Bacon D J 2001 Introduction to Dislocations （Oxford: Butterworth-Heinemann） p123［25］Zou J, Cockayne D J H 1993 J. Appl. Phys. 74 925
[24] ］Zou J, Cockayne D J H 1993 Appl. Phys. Lett. 63 2222
[25] ］Cowley J M, Moodie A F 1957 Acta Crystallogr. 10 609
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[1] ［1］Kroemer H 2004 Physica E 20 196
[2] ［2］Subbanna S, Gaines J, Tuttle G, Kroemer H, Chalmers S, English J H 1989 J. Vac. Sci. Technol. B 7 289
[3] ［3］Kim H S, Noh Y K, Kim M D, Kwon Y J, Oh J E, Kim Y H, Lee J Y, Kim S G, Chung K S 2007 J. Cryst. Growth 301-302 230［4］Lomer W M 1951 Philos. Mag. 42 1327
[4] ［5］Marshall A F, Aubertine D B, Nix W D, McIntyre P C 2005 J. Mater. Res. 20 447
[5] ［6］Tillmann K, Houben L, Thust A 2006 Philos. Mag. 86 4589
[6] ［7］Qian W, Skowronski M, Kaspi R, de Graef M, Dravid V P 1997 J. Appl. Phys. 81 7268
[7] ［8］Jallipalli A, Balakrishnan G, Huang S H, Khoshakhlagh A, Dawson L R, Huffaker D L 2007 J. Cryst. Growth 303 449
[8] ［9］Trampert A, Tournie E, Ploog K H 1995 Appl. Phys. Lett. 66 2265
[9] ］Chen F R, Kai J J, Chang L, Wang J Y, Chen W J 1999 J. Electron Microsc. 48 827
[10] ］He W Z, Li F H, Chen H, Kawasaki K, Oikawa T 1997 Ultramicroscopy 70 1
[11] ］Wang D, Zou J, He W Z, Chen H, Li F H, Kawasaki K, Oikawa T 2004 Ultramicroscopy 98 259
[12] ］Wang D, Chen H, Li F H, Kawasaki K, Oikawa T 2002 Ultramicroscopy 93 139
[13] ］Scherzer O 1949 J. Appl. Phys. 20 20
[14] ］Han F S, Fan H F, Li F H 1986 Acta Crystallogr. A 42 353
[15] ］Hu J J, Li F H 1991 Ultramicroscopy 35 339
[16] ］Li F H, Wang D, He W Z, Jiang H 2000 J. Electron Microsc. 49 17
[17] ］Tang C Y, Li F H, Wang R, Zou J, Zheng X H, Liang J W 2007 Phys. Rev. B 75 184103
[18] ］Li F H, Tang D 1985 Acta Crystallogr. A 41 376
[19] ］Thon F 1966 Z. Naturforsch. 210 476
[20] ］Hornstra J 1958 J. Phys. Chem. Solids 5 129
[21] ］Vila A, Cornet A, Morante J R, Ruterana P, Loubradou M, Bonnet R, Gonzalez Y, Gonzalez L 1995 Philos. Mag. A 71 85
[22] ］Lopatin S, Pennycook S J, Narayan J, Duscher G 2002 Appl. Phys. Lett. 81 2728
[23] ］Hull D, Bacon D J 2001 Introduction to Dislocations （Oxford: Butterworth-Heinemann） p123［25］Zou J, Cockayne D J H 1993 J. Appl. Phys. 74 925
[24] ］Zou J, Cockayne D J H 1993 Appl. Phys. Lett. 63 2222
[25] ］Cowley J M, Moodie A F 1957 Acta Crystallogr. 10 609
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