The effect of laser irradiation on ZnO thin films

Zhao Yan; Jiang Yi-Jian

doi:10.7498/aps.59.2679

Abstract

The effect of KrF pulsed excimer laser irradiation on intrinsic defects，ultra-violet (UV) emission and surface morphology of ZnO thin films was investigated，and also the origin of room temperature UV emission was discussed in detail. It was found that，the KrF laser can break the Zn—O bonds; therefore，the concentration of VO (or Zni) defects increases，leading to the decrease of resistivity and increase of carrier concentration. By adjusting the laser energy densities，the donor defect concentration can be controlled in a wide range. Simultaneously，under the heat of laser，the melting grains connect with each other，resulting in the great decrease of surface roughness. Room temperature UV emission of ZnO film is composed of contribution from free-exciton (FX) recombination and its longitudinal-optical phonon replica (FX-LO), the defect density determines the relative strengths of FX to FX-LO emission intensities，which strongly affect the peak position and intensity of UV emission of ZnO film. This investigation indicates that the laser irradiation is an effective technique to modulate the exciton emission by controlling the defect density，which is important for the application of high performance of UV emitting optoelectronic devices.

Keywords:

Authors and contacts

1.
北京工业大学激光工程研究院，北京 100124

References

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[4]	［4］Chen SJ，Liu Y C，Shao C L，Mu R，Lu Y M，Zhang J Y，Shen D Z，Fan X W 2005 Adv. Mater. 17 586
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[9]	［9］Ye Z Z 2008 Int. Acad. Dev. 5 30 (in Chinese) ［叶志镇 2008 国际学术动态 5 30］
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[16]	］Lim J，Lee C M 2007 Thin Solid Films 515 3335
[17]	］Yang Y L，Yan H W，Fu Z P 2006 Solid State Commun. 138 521
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[19]	］Wang X，Yang S，Wang J，Li M，Jiang X，Du G，Liu X，Chang R P H 2002 Opt. Quantum Electron. 34 883
[20]	］Kurbanov S S，Panin G N，Kim T W，Kang T W 2008 Phys. Rev.B 78 045311
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[22]	］Panina G N，Kang T W，Aleshin A N 2005 Appl. Phys. Lett. 86 113114.
[23]	］Tuomisto F，Saarinen K，Look D C，Farlow G C 2005 Phys. Rev. B 72 085206.
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[25]	］Ji L F，Jiang Y J, Wang W, Yu Z L 2004 Appl. Phys. Lett. 85 1577
[26]	］Ji Y L，Jiang Y J 2006 Appl. Phys. Lett. 89 221103
[27]	］Chang L，Jiang Y J, Ji L F 2007 Appl. Phys. Lett. 90 082505
[28]	］Oh M S，Hwang D K，Lim J H 2007 Appl. Phys. Lett. 91 042109
[29]	］Aoki T，Hatanaka Y 2000 Appl. Phys. Lett. 76 3257
[30]	］Cao W T，Du W 2007 J. Lumin. 124 260
[31]	］Zhao Y，Jiang Y J 2007 J. Cryst. Growth. 307 278
[32]	］Oh M S，Kim S H，Hwang D K，Park S J，Seong T Y 2005 Electron. Chem. Solid-State Lett. 8 G317
[33]	］Wang X C，Lim G C，Liu W，Soh C B，Chua S J 2005 Appl. Surf. Sci. 252 2071
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[35]	］Cui J B 2008 J. Phys. Chem. C 112 10385

Cited By

[1]	［1］Tang Z K，Wong G K L，Yu P，Kawasaki M，Ohtomo A，Koinuma H，Segawa Y 1998 Appl. Phys. Lett. 72 3270
[2]	［2］Huang M H，Mao S，Feick H，Yan H Q，Wu Y Y，Kind H，Weber E，Russo R，Yang P D 2001 Science 292 1897
[3]	［3］Tsukazaki A，Onuma T，Ohtani M 2005 Nat. Mater. 4 42
[4]	［4］Chen SJ，Liu Y C，Shao C L，Mu R，Lu Y M，Zhang J Y，Shen D Z，Fan X W 2005 Adv. Mater. 17 586
[5]	［5］Lu J G，Zhang Y Z，Ye Z Z 2006 Appl. Phys. Lett. 88 222114
[6]	［6］Chen J，Jin G J，Ma Y Q 2009 Acta Phys.Sin. 58 2707 (in Chinese) ［陈静、金国钧、马余强 2009 物理学报 58 2707］
[7]	［7］Xiao J，Bai X，Zhang G M 2008 Acta Phys.Sin. 57 7057 (in Chinese) ［肖竞、柏鑫、张耿民 2008 物理学报 57 7057］
[8]	［8］Tang K，Gu S L，Zhu M 2008 Appl. Phys. Lett. 93 132107
[9]	［9］Ye Z Z 2008 Int. Acad. Dev. 5 30 (in Chinese) ［叶志镇 2008 国际学术动态 5 30］
[10]	］Wang R C，Liu C P，Huang J L，Chen S J 2005 Appl. Phys. Lett. 87 053103
[11]	］Fan H J，Scholz R，Kolb F M，Zacharias M 2004 Appl. Phys. Lett. 85 4142
[12]	］Hong W K，Jo G H，Choe M，Lee T，Sohn J I，Welland M E 2009 Appl. Phys. Lett. 94 043103
[13]	］Hur T B，Hwang Y H，Kim H K 2005 Appl. Phys. Lett. 86 193113
[14]	］Lee S，Kim D Y 2008 J. Appl. Phys. 104 093515
[15]	］Noh J H，Jung H S，Lee J K，Kim J Y 2008 J. Appl. Phys. 104 073706
[16]	］Lim J，Lee C M 2007 Thin Solid Films 515 3335
[17]	］Yang Y L，Yan H W，Fu Z P 2006 Solid State Commun. 138 521
[18]	］Kashiwaba Y，Haga K，Watanabe H，Zhang B P，Segawa Y，Wakatsuki K 2002 Phys. Stat. Sol.B 229 921
[19]	］Wang X，Yang S，Wang J，Li M，Jiang X，Du G，Liu X，Chang R P H 2002 Opt. Quantum Electron. 34 883
[20]	］Kurbanov S S，Panin G N，Kim T W，Kang T W 2008 Phys. Rev.B 78 045311
[21]	］Klik M A J，Gregorkiewicz T，Yassievich I N，Ivanov V Y，Godlewski M 2005 Phys. Rev.B 72 125205
[22]	］Panina G N，Kang T W，Aleshin A N 2005 Appl. Phys. Lett. 86 113114.
[23]	］Tuomisto F，Saarinen K，Look D C，Farlow G C 2005 Phys. Rev. B 72 085206.
[24]	］Look D C，Hemsky J W，Sizelove J R 1999 Phys. Rev. Lett. 82 2552
[25]	］Ji L F，Jiang Y J, Wang W, Yu Z L 2004 Appl. Phys. Lett. 85 1577
[26]	］Ji Y L，Jiang Y J 2006 Appl. Phys. Lett. 89 221103
[27]	］Chang L，Jiang Y J, Ji L F 2007 Appl. Phys. Lett. 90 082505
[28]	］Oh M S，Hwang D K，Lim J H 2007 Appl. Phys. Lett. 91 042109
[29]	］Aoki T，Hatanaka Y 2000 Appl. Phys. Lett. 76 3257
[30]	］Cao W T，Du W 2007 J. Lumin. 124 260
[31]	］Zhao Y，Jiang Y J 2007 J. Cryst. Growth. 307 278
[32]	］Oh M S，Kim S H，Hwang D K，Park S J，Seong T Y 2005 Electron. Chem. Solid-State Lett. 8 G317
[33]	］Wang X C，Lim G C，Liu W，Soh C B，Chua S J 2005 Appl. Surf. Sci. 252 2071
[34]	］Voss T，Bekeny C，Wischmeier L，Gafsi H，Borner S，Schade W，Mofor A C，Bakin A，Waag A 2006 Appl. Phys. Lett. 89 182107
[35]	］Cui J B 2008 J. Phys. Chem. C 112 10385

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Vol. 59, Issue 4 - 2010-02-20

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