Static surface states and bulk traps in AlGaN/GaN HEMT including hot electron and quantum effects

Hao Li-Chao; Duan Jun-Li

doi:10.7498/aps.59.2746

Abstract

The effects of static surface states and bulk traps on output characteristics have been studied. The effects of surface charge and bulk traps on current collapse, saturation current and knee voltage are investigated, and their relationships have been determined. The results show that the increase of the surface charge can exhaust the two-dimensional electron gas, and reduce the current collapse effect and saturation current, inducing the abnormal shift of the knee voltage. At the same time, reducing the bulk traps can alleviate the current collapse effect and increase the saturation current with the slight change of the knee voltage. At low lattice temperature, the hot electron effect and quantum tunneling effect play an important role in the current collapse. By using the hydrodynamics model, possible physical mechanisms are discussed, and an approach is proposed to reduce the effects of the static surface states and bulk traps on the output characteristics.

Keywords:

Authors and contacts

Hao Li-Chao²,
Duan Jun-Li¹

(1)上海交通大学医学院附属新华医院，上海 200240; (2)同济大学物理学院，上海 200092

References

[1]	［1］Gu W P, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H 2009 Acta Phys. Sin. 58 511 (in Chinese) ［谷文萍、郝跃、张进城、王冲、冯倩、马晓华 2009 物理学报 58 511］
[2]	［2］Hu W D, Chen X S, Quan Z J, Zhang M X, Huang Y, Xia C S, Lu W, Ye D P 2007 J. Appl. Phys. 102 034502
[3]	［3］Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, Lü L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013 (in Chinese) ［周忠堂、郭丽伟、邢志刚、丁国建、谭长林、吕力、刘建、刘新宇、贾海强、陈弘、周均铭 2007 物理学报 56 6013］
[4]	［4］Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Yuan H J 2006 Appl. Phys. Lett. 89 243501
[5]	［5］Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Ye P D 2006 J. Appl. Phys. 100 074501
[6]	［6］Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W H， Yan J, Luo Y 2008 Acta Phys. Sin. 57 7238 (in Chinese) ［席光义、任凡、郝智彪、汪莱、李洪涛、江洋、赵维韩、彦军、罗毅 2008 物理学报 57 7238］
[7]	［7］Simin G, Yang J Z, Koudymov A, Adivarahan V, Yang J, Khan M A 2006 Appl. Phys. Lett. 89 033510
[8]	［8］Hu W D, Chen X S, Zhou X C, Quan Z J, Lu W 2006 Microelectron. J. 37 613
[9]	［9］Xia C S, Hu W D, Wang C, Li Z F, Chen X S, Lu W, Simon Li Z M, Li Z Q 2006 Opt. Quant. Electron. 38 1077
[10]	］Wang C, Quan S, Zhang J F, Hao Y, Feng Q, Chen J F 2009 Acta Phys. Sin. 58 1966 (in Chinese) ［王冲、全思、张金凤、郝跃、冯倩、陈军峰 2009 物理学报 58 1966］
[11]	］Qiao H, Liao Y, Hu W D, Deng Y, Yuan Y G, Zhang Q Y, Li X Y, Gong H M 2008 Acta Phys. Sin. 57 7088 (in Chinese) ［乔辉、廖毅、胡伟达、邓屹、袁永刚、张勤耀、李向阳、龚海梅 2008 物理学报 57 7088］
[12]	］Yin F, Hu W D, Quan Z J, Zhang B, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7884(in Chinese) ［殷菲、胡伟达、全知觉、张波、胡晓宁、李志锋、陈效双、陆卫 2009 物理学报 58 7884］
[13]	］Hu W D, Yin F, Ye Z H, Quan Z J, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7891 (in Chinese) ［胡伟达、殷菲、叶振华、全知觉、胡晓宁、李志锋、陈效双、陆卫 2009 物理学报 58 7891］
[14]	］Hu W D, Chen X S, Yin F, Quan Z J, Ye Z H, Hu X N, Li Z F, Lu W 2009 J. Appl. Phys. 105 104502
[15]	］Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, Asif K M, Simin G, Yang J 2004 J. Appl. Phys. 95 6409
[16]	］Hasegawa H, Inagaki T, Ootomo S 2003 J. Vac. Sci. Technol. 21 1844
[17]	］Meneghesso G, Verzellesi G, Pierobon R, Rampazzo F, Chini A, Mishra U K, Canali C, Zanoni E 2004 IEEE Trans. Electron Devices 51 1554
[18]	］Feng Q, Hao Y, Yue Y Z 2008 Acta Phys. Sin. 57 1886 (in Chinese) ［冯倩、郝跃、岳远征 2008 物理学报 57 1886］
[19]	］Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502
[20]	］Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y 2009 Acta Phys. Sin. 58 1161 (in Chinese) ［谷文萍、张进城、王冲、冯倩、马晓华、郝跃 2009 物理学报 58 1161］
[21]	］Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta Phys. Sin. 58 536 (in Chinese) ［刘林杰、岳远征、张进城、马晓华、董作典、郝跃 2009 物理学报 58 536］
[22]	］Gaska R, Bykhovski A D, Shur M S 1998 Appl. Phys. Lett. 73 3577
[23]	］Li Z F, Lu W, Shen S C, Holland S, Hu C M, Heitmann D, Shen B, Zhang Y D 2002 Appl. Phys. Lett. 80 431
[24]	］Faraclas E W, Anwar A F M 2006 Solid-State Electron. 50 1051
[25]	］Wells A M, Uren M J, Balmer R S, Hilton K P, Martin T, Missous M 2005 Solid-State Electron. 49 279
[26]	］Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 0467 (in Chinese) ［魏巍、林若兵、冯倩、郝跃 2008 物理学报 57 0467］
[27]	］Hu W D, Chen X S, Quan Z J, Zhou X C, Lu W 2006 J. Infrared Millim. Waves 25 90 (in Chinese) ［胡伟达、陈效双、全知觉、周旭昌、陆卫 2006 红外与毫米波学报 58 90］
[28]	］Gaska R, Osinsky A, Yang J W, Shur M S 1998 IEEE Electr. Device Lett. 19 89

Cited By

[1]	［1］Gu W P, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H 2009 Acta Phys. Sin. 58 511 (in Chinese) ［谷文萍、郝跃、张进城、王冲、冯倩、马晓华 2009 物理学报 58 511］
[2]	［2］Hu W D, Chen X S, Quan Z J, Zhang M X, Huang Y, Xia C S, Lu W, Ye D P 2007 J. Appl. Phys. 102 034502
[3]	［3］Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, Lü L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013 (in Chinese) ［周忠堂、郭丽伟、邢志刚、丁国建、谭长林、吕力、刘建、刘新宇、贾海强、陈弘、周均铭 2007 物理学报 56 6013］
[4]	［4］Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Yuan H J 2006 Appl. Phys. Lett. 89 243501
[5]	［5］Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Ye P D 2006 J. Appl. Phys. 100 074501
[6]	［6］Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W H， Yan J, Luo Y 2008 Acta Phys. Sin. 57 7238 (in Chinese) ［席光义、任凡、郝智彪、汪莱、李洪涛、江洋、赵维韩、彦军、罗毅 2008 物理学报 57 7238］
[7]	［7］Simin G, Yang J Z, Koudymov A, Adivarahan V, Yang J, Khan M A 2006 Appl. Phys. Lett. 89 033510
[8]	［8］Hu W D, Chen X S, Zhou X C, Quan Z J, Lu W 2006 Microelectron. J. 37 613
[9]	［9］Xia C S, Hu W D, Wang C, Li Z F, Chen X S, Lu W, Simon Li Z M, Li Z Q 2006 Opt. Quant. Electron. 38 1077
[10]	］Wang C, Quan S, Zhang J F, Hao Y, Feng Q, Chen J F 2009 Acta Phys. Sin. 58 1966 (in Chinese) ［王冲、全思、张金凤、郝跃、冯倩、陈军峰 2009 物理学报 58 1966］
[11]	］Qiao H, Liao Y, Hu W D, Deng Y, Yuan Y G, Zhang Q Y, Li X Y, Gong H M 2008 Acta Phys. Sin. 57 7088 (in Chinese) ［乔辉、廖毅、胡伟达、邓屹、袁永刚、张勤耀、李向阳、龚海梅 2008 物理学报 57 7088］
[12]	］Yin F, Hu W D, Quan Z J, Zhang B, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7884(in Chinese) ［殷菲、胡伟达、全知觉、张波、胡晓宁、李志锋、陈效双、陆卫 2009 物理学报 58 7884］
[13]	］Hu W D, Yin F, Ye Z H, Quan Z J, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7891 (in Chinese) ［胡伟达、殷菲、叶振华、全知觉、胡晓宁、李志锋、陈效双、陆卫 2009 物理学报 58 7891］
[14]	］Hu W D, Chen X S, Yin F, Quan Z J, Ye Z H, Hu X N, Li Z F, Lu W 2009 J. Appl. Phys. 105 104502
[15]	］Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, Asif K M, Simin G, Yang J 2004 J. Appl. Phys. 95 6409
[16]	］Hasegawa H, Inagaki T, Ootomo S 2003 J. Vac. Sci. Technol. 21 1844
[17]	］Meneghesso G, Verzellesi G, Pierobon R, Rampazzo F, Chini A, Mishra U K, Canali C, Zanoni E 2004 IEEE Trans. Electron Devices 51 1554
[18]	］Feng Q, Hao Y, Yue Y Z 2008 Acta Phys. Sin. 57 1886 (in Chinese) ［冯倩、郝跃、岳远征 2008 物理学报 57 1886］
[19]	］Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502
[20]	］Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y 2009 Acta Phys. Sin. 58 1161 (in Chinese) ［谷文萍、张进城、王冲、冯倩、马晓华、郝跃 2009 物理学报 58 1161］
[21]	］Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta Phys. Sin. 58 536 (in Chinese) ［刘林杰、岳远征、张进城、马晓华、董作典、郝跃 2009 物理学报 58 536］
[22]	］Gaska R, Bykhovski A D, Shur M S 1998 Appl. Phys. Lett. 73 3577
[23]	］Li Z F, Lu W, Shen S C, Holland S, Hu C M, Heitmann D, Shen B, Zhang Y D 2002 Appl. Phys. Lett. 80 431
[24]	］Faraclas E W, Anwar A F M 2006 Solid-State Electron. 50 1051
[25]	］Wells A M, Uren M J, Balmer R S, Hilton K P, Martin T, Missous M 2005 Solid-State Electron. 49 279
[26]	］Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 0467 (in Chinese) ［魏巍、林若兵、冯倩、郝跃 2008 物理学报 57 0467］
[27]	］Hu W D, Chen X S, Quan Z J, Zhou X C, Lu W 2006 J. Infrared Millim. Waves 25 90 (in Chinese) ［胡伟达、陈效双、全知觉、周旭昌、陆卫 2006 红外与毫米波学报 58 90］
[28]	］Gaska R, Osinsky A, Yang J W, Shur M S 1998 IEEE Electr. Device Lett. 19 89

[1]	Feng Jie, Guo Qiang, Shu Peng-Li, Wen Yang, Wen Huan-Fei, Ma Zong-Min, Li Yan-Jun, Liu Jun, Igor Vladimirovich Yaminsky. Measurement of distribution of charge adsorbed on Au_x/Si(111)-7×7 surface on an atomic scale in ultra-high vacuum. Acta Physica Sinica, 2023, 72(11): 110701. doi: 10.7498/aps.72.20230051
[2]	Liao Tian-Jun, Yang Zhi-Min, Lin Bi-Hong. Performance optimization of graphene thermionicdevices based on charge and heat transport. Acta Physica Sinica, 2021, 70(22): 227901. doi: 10.7498/aps.70.20211110
[3]	Liu Jing, Wang Lin-Qian, Huang Zhong-Xiao. Current collapse suppression in AlGaN/GaN high electron mobility transistor with groove structure. Acta Physica Sinica, 2019, 68(24): 248501. doi: 10.7498/aps.68.20191311
[4]	Ru Jia-Sheng, Min Dao-Min, Zhang Chong, Li Sheng-Tao, Xing Zhao-Liang, Li Guo-Chang. Research on surface potential decay characteristics of epoxy resin charged by direct current corona. Acta Physica Sinica, 2016, 65(4): 047701. doi: 10.7498/aps.65.047701
[5]	Ma Wu-Ying, Wang Zhi-Kuan, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wang Xin, Liu Mo-Han, Jiang Ke. The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistors. Acta Physica Sinica, 2014, 63(11): 116101. doi: 10.7498/aps.63.116101
[6]	Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng. Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica, 2012, 61(20): 207301. doi: 10.7498/aps.61.207301
[7]	Zhu Zheng-He, Meng Da-Qiao. The delocalization effect of 5f electrons for the actinide elements Th to Es. Acta Physica Sinica, 2011, 60(4): 040301. doi: 10.7498/aps.60.040301
[8]	Gu Jiang, Wang Qiang, Lu Hong. Current collapse effect, interfacial thermal resistance and work temperature for AlGaN/GaN HEMTs. Acta Physica Sinica, 2011, 60(7): 077107. doi: 10.7498/aps.60.077107
[9]	Han Lu-Hui, Zhang Chong-Hong, Zhang Li-Qing, Yang Yi-Tao, Song Yin, Sun You-Mei. X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions. Acta Physica Sinica, 2010, 59(7): 4584-4590. doi: 10.7498/aps.59.4584
[10]	Wang Lin, Hu Wei-Da, Chen Xiao-Shuang, Lu Wei. Study on mechanism of current collapse and knee voltage drift for AlGaN/GaN HEMTs. Acta Physica Sinica, 2010, 59(8): 5730-5737. doi: 10.7498/aps.59.5730
[11]	Wei Wei, Lin Ruo-Bing, Feng Qian, Hao Yue. Current collapse mechanism of field-plated AlGaN/GaN HEMTs. Acta Physica Sinica, 2008, 57(1): 467-471. doi: 10.7498/aps.57.467
[12]	Xi Guang-Yi, Ren Fan, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Han Yan-Jun, Luo Yi. Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs. Acta Physica Sinica, 2008, 57(11): 7238-7243. doi: 10.7498/aps.57.7238
[13]	Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng. Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica, 2006, 55(7): 3622-3628. doi: 10.7498/aps.55.3622
[14]	Jiao Yi-Ming, Long Yong-Xing, Dong Jia-Qi, Shi Bing-Ren, Gao Qing-Di. Effects of the trapping effect on LHCD in tokamak. Acta Physica Sinica, 2005, 54(1): 180-185. doi: 10.7498/aps.54.180
[15]	SHAO LEIL, HUO YU-KUN, WANG PING-XIAO, KONG QING, YUAN XIANG-QUN, FENG LIANG. EFFECT OF FIELD POLARIZATION DIRECTION ON ACCELERATING ELECTRON WITH EXTRA-INTENSE STATIONARY LASER BEAM. Acta Physica Sinica, 2001, 50(7): 1284-1289. doi: 10.7498/aps.50.1284
[16]	MIAO RUN-CAI, FU KE-DE, LI XIANG, LIU XI-SHE, ZHANG CHANG-AN. FORMATION PROCESS OF CHARGE TRANSFER EFFECT IN SILVER SURFACE-MOLECUL SYSTEM. Acta Physica Sinica, 1991, 40(3): 454-458. doi: 10.7498/aps.40.454
[17]	MIAO RUN-CAI, PAN DUO-HAI, ZHANG PENG-XIANG, LI XIU-YING. CHARGE TRANSFER IN SILVER SURFACE-MOLECULE SYSTEM. Acta Physica Sinica, 1988, 37(11): 1870-1875. doi: 10.7498/aps.37.1870
[18]	Huang Chao-song Ren Zhao-xing Qiu LI-jian. EFFECTS OF LINE-TYING ON HOT ELECTRON INTERCHANGE MODE. Acta Physica Sinica, 1987, 36(8): 1028-1032. doi: 10.7498/aps.36.1028
[19]	ZHU ANG-RU, WU XI-LIN. THE MECHANISM OF THE SECONDARY ION EMISSION INVESTIGATED BY THE EFFECT OF ENERGETIC ELECTRONS. Acta Physica Sinica, 1984, 33(10): 1475-1479. doi: 10.7498/aps.33.1475
[20]	ZHANG EN-QIU. ON THE THEORY OF THERMIONIC EMISSION (Ⅲ)——A MODEL OF DYNAMICAL SURFACE EMISSION CENTERS. Acta Physica Sinica, 1976, 25(1): 23-30. doi: 10.7498/aps.25.23

Catalog

Vol. 59, Issue 4 - 2010-02-20

Metrics

Abstract views: 8548
PDF Downloads: 1829
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板