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Synthesis and luminescent properties of Mg2+ doped Zn2SiO4:Mn2+ phosphor under VUV excitation

Liu Ji- Di Wang Yu-Hua

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Synthesis and luminescent properties of Mg2+ doped Zn2SiO4:Mn2+ phosphor under VUV excitation

Liu Ji- Di, Wang Yu-Hua
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  • A series of phosphors of Zn1.92-xMgxSiO4:0.08Mn(0≤x≤0.12)were successfully synthesized at various heating atmosphere via sol-gel method. The structure and luminescent properties of the samples were characterized by X-ray diffractometer (XRD) and the FLS920T Spectrophotometer, respectively. The results indicated that in the Zn1.92SiO4:0.08Mn system, the Mg2+ doped could substitute for the Zn2+ site and result in the decrease of lattice parameters. The absorption band of the MgO4 cluster was located at about 154 nm in vacuum ultraviolet region. Mg2+ ion doping has favorable influence on the photoluminescence properties of Zn2SiO4:Mn2+, the optimum concentration of Mg2+ being 0.06 mol under 147 nm excitation. The emission intensity of Zn1.92-xMgx SiO4:0.08Mn2+ phosphors calcined in the mixture of nitrogen and hydrogen were stronger than those of the phosphors calcined in other heating atmospheres, and the emission intensity of Zn1.86Mg0.06SiO4:0.08Mn2+ calcined in the mixture of N2 and H2 was 113% of that of Zn1.92SiO4:0.08Mn2+, being 5% higher than that of commercial phosphor. After Mg2+ doping the decay time of phosphor was much shortened and the decay time of Zn1.86Mg0.06SiO4:0.08Mn2+ was 3.89 ms, which was shorter by 1.33 ms than that of commercial product.
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    ]Kang Y C, Lim M A, Park H D, Han M 2003 J. Electrochem. Soc. 150 H7

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    ]Hao Y, Wang Y H 2009 J. Alloy. Compd. 470 565

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    ]Hao Y, Wang Y H 2006 Electrochem. Solid St. 9 H100

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    ]Sharma P, Bhatti H S 2009 J. Alloy. Compd. 473 483

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    ]Hao Y, Wang Y h 2007 J. Lumin. 122-123 1006

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    ]Wang Y h, Hao Y, Li h, Yu w 2006 J. Alloy. Compd. 425 339

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    ]Im S J, Choi S Y, Manashirov O Y, Lee W T, Lee S J, Lee J W, Kim J M 1999 Proceedings of the 19th International Display Research Conference, Berlin Germany, September 6-9, 1999 P61

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    ]Morimo R, Mochinaga R, Nakamura K 1994 Mater. Res. Bull. 29 751

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    ]Dexter D L 1954 J. Chem. Phys. 22 1063

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    ]Lin Y h, Tang Z L, Zhang Z T, Nan C W 2002 Appl. Phys. Lett. 81 996

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    ]Harlow G E, Shankland T J 1974 Geochim. Cosmochim. Acta. 38 589

  • [1]

    [1]Kreng V B, Wang H T 2009 Comput. Ind. Eng. doi:10.1016/j.cie.2009.05.008

    [2]

    [2]Liu D L, Tu Y, Yang L L 2009 Vacuum Electronics 01 39 (in Chinese)[刘德龙、屠彦、杨兰兰 2009 真空电子技术 01 39]

    [3]

    [3]Wu C F, Meng X, Li J, Wang Y H 2009 Acta Phys. Sin. 58 6518 (in Chinese) [吴春芳、孟燮、李杰、王育华 2009 物理学报 58 6518]

    [4]

    [4]Liao Q R, Zhuang w D, Xia T, Liu R H, Hu Y S, Teng X M, Liu Y H 2009 Acta Phys. Sin. 58 2776 (in Chinese) [廖秋荣、庄卫东、夏天、刘荣辉、胡运生、滕晓明、刘元红 2009 物理学报 58 2776]

    [5]

    [5]Deng C Y, He D W, Zhuang W D, Wang Y S, Kang K, Huang X W 2004 Chin. Phys. 13 473

    [6]

    [6]Gou J, Wang Y H, Li F, He L 2006 Acta Phys. Sin. 55 4310 (in Chinese) [苟婧、王育华、李峰、何玲 2006 物理学报 55 4310]

    [7]

    [7]Yang Z P, Liu Y F 2006 Acta Phys. Sin. 55 4946 (in Chinese) [杨志平、刘玉峰 2006 物理学报 55 4946]

    [8]

    [8]Zeng J H, Fu H L, Lou T J, Yu Y, Sun Y H, Li D Y 2009 Mater. Res. Bull. 44 1106

    [9]

    [9]Mai M, Feldmann C 2009 Solid State Sci. 11 528

    [10]

    ]LukiDc' S R, PetroviDc' D M, DramiDc'anin M D, MitriDc' M, DaDcˇanin L 2008 Scripta Mater. 58 655

    [11]

    ]Wan J X, Wang Z H, Chen X Y, Mu L, Yu W C, Qian Y T 2006 J. Lumin. 121 32

    [12]

    ]Cho T H, Chang H J 2003 Ceram. Int. 29 611

    [13]

    ]Barthou C, Benoit J, Benalloul P 1994 J. Electrochem. Soc. 141 524

    [14]

    ]Pappalardo R G, Miniscalco W J, Peters T E 1993 J. Lumin.55 87

    [15]

    ]Kolk E V, Dorenbos P, Eijk C V, Bechtel H, Justel T, Nikol H, Ronda C R, Wiechert D U 2000 J. Lumin. 87-89 1246

    [16]

    ]Kang Y C, Lim M A, Park H D, Han M 2003 J. Electrochem. Soc. 150 H7

    [17]

    ]Hao Y, Wang Y H 2009 J. Alloy. Compd. 470 565

    [18]

    ]Hao Y, Wang Y H 2006 Electrochem. Solid St. 9 H100

    [19]

    ]Sharma P, Bhatti H S 2009 J. Alloy. Compd. 473 483

    [20]

    ]Hao Y, Wang Y h 2007 J. Lumin. 122-123 1006

    [21]

    ]Wang Y h, Hao Y, Li h, Yu w 2006 J. Alloy. Compd. 425 339

    [22]

    ]Im S J, Choi S Y, Manashirov O Y, Lee W T, Lee S J, Lee J W, Kim J M 1999 Proceedings of the 19th International Display Research Conference, Berlin Germany, September 6-9, 1999 P61

    [23]

    ]Mishra K C, Johnson K H, DeBoer B G, Berkowitz J K, Olsen J 1991 J. Lumin. 47 197

    [24]

    ]Masaaki, Tamatani 1974 Jpn. J. Appl. Phys. 13 950

    [25]

    ]Morimo R, Mochinaga R, Nakamura K 1994 Mater. Res. Bull. 29 751

    [26]

    ]Dexter D L 1954 J. Chem. Phys. 22 1063

    [27]

    ]Lin Y h, Tang Z L, Zhang Z T, Nan C W 2002 Appl. Phys. Lett. 81 996

    [28]

    ]Harlow G E, Shankland T J 1974 Geochim. Cosmochim. Acta. 38 589

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Publishing process
  • Received Date:  03 August 2009
  • Accepted Date:  23 September 2009
  • Published Online:  15 May 2010

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