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Research of in-situ electrical property of micron dimension ZnO under high pressure

Wu Bao-Jia Han Yong-Hao Peng Gang Liu Cai-Long Wang Yue Gao Chun-Xiao

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Research of in-situ electrical property of micron dimension ZnO under high pressure

Wu Bao-Jia, Han Yong-Hao, Peng Gang, Liu Cai-Long, Wang Yue, Gao Chun-Xiao
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  • Using the diamond anvil cell(DAC)method and the technology of sputtered film, photoetch and chemical etching, the conductivity of micron dimension ZnO were measured successfully under high pressure with molybdenum electrodes on DAC. The samples conductivity was minimal at 919 GPa pressure, which showed the beginning of structural phase transition from wurtzite to rocksalt. Contining compression as far as 1122 GPa, the conductivity increased rapidly and then slowly, which indicated the phase transformation pressure spot was 1122 GPa and the whole example was of rocksalt structure. In addition, it was found that the oxygen holes caused conductivity change by experimentally comparing the samples annealed at 500 ℃ in air, in argon and unannealed respectively.
    [1]

    [1]Lawson A W, Tang T Y 1950 Rev. Sci. Instrum. 21 815

    [2]

    [2]Mao H K, Bell P M 1976 Carnegie Institution of Washington Year Book 75 824

    [3]

    [3]Block S, Forman R A 1977 High Pressure Research: Applications in Geophysics (New York: Academic)p503

    [4]

    [4]Mao H K, Bell P M 1981 Rev. Sci. Instrum. 52 615

    [5]

    [5]Grzybowski T A, Ruoff A L 1984 Phys. Rev. Lett. 53 489

    [6]

    [6]Hemmés H, Driessen A, Kos J, Mul F A, Griessen R 1989 Rev. Sci. Instrum. 60 474

    [7]

    [7]Weir S T, Akella J, Ruddle C A, Vohra Y K, Catledge S A 2000 Appl. Phys. Lett. 77 3400

    [8]

    [8]Jackson D D, Arache R C, Malba V, Weir S T, Catledge S A, Vohra Y K 2003 Rev. Sci. Instrum. 74 2467

    [9]

    [9]Gao C X, Han Y H, Ma Y Z, White A, Liu H W, Luo J F, Li M, He C Y, Hao A M, Huang X W, Pan Y W, Zou G T 2005 Rev. Sci. Instrum. 76 083912

    [10]

    ]Han Y H, Gao C X, Ma Y Z, Liu H W, Pan Y W, Luo J F, Li M, He C Y, Huang X W, Zou G T 2005 Appl. Phys. Lett. 86 064104

    [11]

    ]Luo J F,Tang B C,Gao C X,Li M,Han Y H,Zou G T 2005 Chin. Phys. 14 1223

    [12]

    ]Itkin G, Hearne G R, Sterer E, Pasternak M P, Potzel W 1995 Phys. Rev. B 51 3195

    [13]

    ]Eremets M I, Gregoryanz E A, Struzhkin V V, Mao H K, Hemley R J 2000 Phys. Rev. Lett. 85 2797

    [14]

    ]Hu J Z, Tang R M, Xu J A 1980 Acta Phys.Sin.29 1351(in Chinese)[胡静竹、唐汝明、徐济安 1980 物理学报 29 1351]

    [15]

    ]Jing L Q, Xu Z L, Sun X J 2001 Appl. Surf. Sci. 180 308

    [16]

    ]Chen J, Jin G J, Ma Y Q 2009 Acta Phys. Sin. 58 2707(in Chinese) [陈静、金国钧、马余强 2009 物理学报 58 2707]

    [17]

    ]Sun H, Zhang Q F, Wu J L 2007 Acta Phys.Sin. 56 3479(in Chinese) [孙晖、张琦锋、吴锦雷 2007 物理学报 56 3479]

    [18]

    ]Desgreniers S 1998 Phys. Rev.B 58 14102

    [19]

    ]Karzel H, Potzel W, Kofferlein M, Schiessl W, Steiner M, Hiller U, Kalvius G M 1996 Phys. Rev. B 53 11425

    [20]

    ]Jaffe J E, Hess A C 1993 Phys. Rev. B 48 7903

    [21]

    ]Wickham J N, Herhold A B, Alivisatos A P 2000 Phys. Rev. Lett. 84 923

    [22]

    ]Sans J A, Segura A, Mnajon F J, Mari B, Munoz A, Herrera-Cabrera M J 2005 Microelectron. J. 36 928

    [23]

    ] Dolan G J 1977 Appl. Phys. Lett. 31 337

  • [1]

    [1]Lawson A W, Tang T Y 1950 Rev. Sci. Instrum. 21 815

    [2]

    [2]Mao H K, Bell P M 1976 Carnegie Institution of Washington Year Book 75 824

    [3]

    [3]Block S, Forman R A 1977 High Pressure Research: Applications in Geophysics (New York: Academic)p503

    [4]

    [4]Mao H K, Bell P M 1981 Rev. Sci. Instrum. 52 615

    [5]

    [5]Grzybowski T A, Ruoff A L 1984 Phys. Rev. Lett. 53 489

    [6]

    [6]Hemmés H, Driessen A, Kos J, Mul F A, Griessen R 1989 Rev. Sci. Instrum. 60 474

    [7]

    [7]Weir S T, Akella J, Ruddle C A, Vohra Y K, Catledge S A 2000 Appl. Phys. Lett. 77 3400

    [8]

    [8]Jackson D D, Arache R C, Malba V, Weir S T, Catledge S A, Vohra Y K 2003 Rev. Sci. Instrum. 74 2467

    [9]

    [9]Gao C X, Han Y H, Ma Y Z, White A, Liu H W, Luo J F, Li M, He C Y, Hao A M, Huang X W, Pan Y W, Zou G T 2005 Rev. Sci. Instrum. 76 083912

    [10]

    ]Han Y H, Gao C X, Ma Y Z, Liu H W, Pan Y W, Luo J F, Li M, He C Y, Huang X W, Zou G T 2005 Appl. Phys. Lett. 86 064104

    [11]

    ]Luo J F,Tang B C,Gao C X,Li M,Han Y H,Zou G T 2005 Chin. Phys. 14 1223

    [12]

    ]Itkin G, Hearne G R, Sterer E, Pasternak M P, Potzel W 1995 Phys. Rev. B 51 3195

    [13]

    ]Eremets M I, Gregoryanz E A, Struzhkin V V, Mao H K, Hemley R J 2000 Phys. Rev. Lett. 85 2797

    [14]

    ]Hu J Z, Tang R M, Xu J A 1980 Acta Phys.Sin.29 1351(in Chinese)[胡静竹、唐汝明、徐济安 1980 物理学报 29 1351]

    [15]

    ]Jing L Q, Xu Z L, Sun X J 2001 Appl. Surf. Sci. 180 308

    [16]

    ]Chen J, Jin G J, Ma Y Q 2009 Acta Phys. Sin. 58 2707(in Chinese) [陈静、金国钧、马余强 2009 物理学报 58 2707]

    [17]

    ]Sun H, Zhang Q F, Wu J L 2007 Acta Phys.Sin. 56 3479(in Chinese) [孙晖、张琦锋、吴锦雷 2007 物理学报 56 3479]

    [18]

    ]Desgreniers S 1998 Phys. Rev.B 58 14102

    [19]

    ]Karzel H, Potzel W, Kofferlein M, Schiessl W, Steiner M, Hiller U, Kalvius G M 1996 Phys. Rev. B 53 11425

    [20]

    ]Jaffe J E, Hess A C 1993 Phys. Rev. B 48 7903

    [21]

    ]Wickham J N, Herhold A B, Alivisatos A P 2000 Phys. Rev. Lett. 84 923

    [22]

    ]Sans J A, Segura A, Mnajon F J, Mari B, Munoz A, Herrera-Cabrera M J 2005 Microelectron. J. 36 928

    [23]

    ] Dolan G J 1977 Appl. Phys. Lett. 31 337

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Publishing process
  • Received Date:  05 August 2009
  • Accepted Date:  11 September 2009
  • Published Online:  05 March 2010

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