Thermomigration in micro interconnects in integrated circuits

Zhang Jin-Song; Wu Yi-Ping; Wang Yong-Guo; Tao Yuan

doi:10.7498/aps.59.4395

Abstract

With the reduction of feature size of integrated circuits, higher current density has been introduced in electronic devices which produces a significant Joule heating effect. This also brings about an increase of the temperature which induces a very high temperature gradient in some local regions of micro interconnects. As a result, thermomigration will occur and metal atoms will move opposite to the direction of the temperature gradient. Thermomigration is one of common modes in reliability failures in electronic devices. This paper reviews and analyzes the previous researches on the thermomigration theory and experiment in stripe and solder interconnects under the temperature loading and the current/temperature loading. The challenges of thermomigration are discussed for interconnects in electronic devices in the future.

Keywords:

Authors and contacts

(1)华中科技大学材料科学与工程学院，武汉 430074; (2)上海大学机电工程与自动化学院，上海 200072

References

[1]	［1］Pecht M, Chan Y C 2004 China’s Electronics Industry (College Park: Calce Epsc Press) p18
[2]	［2］Tu K N, Gusak A M, Li M 2003 J. Appl. Phys. 93 1335
[3]	［3］Lee T Y, Tu K N 2001 J. Appl. Phys. 89 3189
[4]	［4］Wu Y P, Zhang J S, Wu F S, An B 2006 J. Semicond. 27 1136 (in Chinese) ［吴懿平、张金松、吴丰顺、安兵 2006 半导体学报 27 1136］
[5]	［5］Van Gurp G J, De Waard P J, Du Chatenier F J 1984 Appl. Phys. Lett. 45 1054
[6]	［6］Ye H, Basaran C, Hopkins D C, Frear D, Lin J K 2004 54th Electronic Components and Technology Conference (Las Vegas: IEEE) p988
[7]	［7］Huang A T, Gusak A M, Tu K N, Lai Y S 2006 Appl. Phys. Lett. 88 141911
[8]	［8］Chuang Y C, Liu C Y 2006 Appl. Phys. Lett. 88 174105
[9]	［9］Johns R A, Blackburn D A 1975 Thin Solid Films 25 291
[10]	］Morozumi S, Goto S, Yoshida T 1976 Scripta Mater. 10 537
[11]	］Fee D C, Johnson C E 1981 J. Nucl. Mater. 96 71
[12]	］McKee R A, Stark J P 1975 Acta Mater. 23 1145
[13]	］Van Gurp G J, De Waard P J, Du Chatenier F J 1985 J. Appl. Phys. 58 728
[14]	］Morillon B, Dilhac J M, Auriel G, Ganibal C, Anceau C 2002 32nd European Solid-State Device Research Conference(Firenze: IEEE) p327
[15]	］De Munari I, Speroni F, Reverberi M, Neva C, Lonzi L, Fantini F 1996 Microelectron. Reliab. 36 1875
[16]	］Van Gurp G J 1976 Thin Solid Films 38 295
[17]	］Oldham D J, Bleay J A, Blackburn D A 1977 Acta Mater. 25 1345
[18]	］Nguyen H V, Salm C, Krabbenbrg B, Weide-Zaage K, Bisschopb J, Mouthma A J, Kuper F G 2004 42nd Annual International Reliability Physics Symposium (Phoenix: IEEE) p619
[19]	］Ru C Q 1999 Acta Mater. 47 3571
[20]	］Ru C Q 2000 J. Mater. Sci. 35 5575
[21]	］Tan C M, Zhang G, Gan Z H 2004 IEEE Trans. Device Mater. Reliab. 4 450
[22]	］Basaran C, Ye H, Hopkins D C, Frear D, Lin J K 2005 Adv. Packaging 10 14
[23]	］Basaran C, Ye H, Hopkins D C, Frear D, Lin J K 2005 J. Electron. Packaging 127 157
[24]	］Ye H, Basaran C, Hopkins D C 2003 Appl. Phys. Lett. 82 1045
[25]	］Ye H, Basaran C, Hopkins D C 2003 Int. J. Solids Struct. 40 7269
[26]	］Roush W, Jaspal J 1982 32nd Electronic Components Conference (San Diego: IEEE) p342
[27]	］Hsiao H Y, Chen C 2007 Appl. Phys. Lett. 90 152105
[28]	］Ouyang F Y, Tu K N, Lai Y S, Gusak M A 2006 Appl. Phys. Lett. 89 221906
[29]	］Rinne G A 2003 28th Electronic Manufacturing Technology Symposium (San Jose: IEEE) p177
[30]	］Yang D, Wu B Y, Chan Y C, Tu K N 2007 J. Appl. Phys. 102 043502
[31]	］Chen H Y, Chen C, Tu K N 2008 Appl. Phys. Lett. 93 122103
[32]	］Hsiao H Y, Chen C 2009 Appl. Phys. Lett. 94 092107
[33]	］Basaran C, Li S D, Abdulhamid M F 2008 J. Appl. Phys. 103 123520
[34]	］Abdulhamid M F, Basaran C 2009 J. Electron. Packaging 131 011002
[35]	］Gu X, Chan Y C 2009 J. Appl. Phys. 105 093537
[36]	］Rinne G A 2003 Microelectron. Reliab. 43 1975
[37]	］Zhang J S 2008 Ph. D. Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese) ［张金松 2008 博士学位论文 (武汉：华中科技大学)］
[38]	］Zhang J S, Chan Y C, Wu Y P, Xi H J, Wu F S, Wu B Y 2008 J. Alloys Compd. 458 492
[39]	］Zhang J S, Xi H J, Wu Y P, Wu F S 2008 J. Semicond. 29 174 (in Chinese) ［张金松、奚弘甲、吴懿平、吴丰顺 2008 半导体学报 29 174］
[40]	］Zhang J S, Xi H J, Wu Y P, Wu F S 2009 J. Electron. Mater. 38 678

Cited By

[1]	［1］Pecht M, Chan Y C 2004 China’s Electronics Industry (College Park: Calce Epsc Press) p18
[2]	［2］Tu K N, Gusak A M, Li M 2003 J. Appl. Phys. 93 1335
[3]	［3］Lee T Y, Tu K N 2001 J. Appl. Phys. 89 3189
[4]	［4］Wu Y P, Zhang J S, Wu F S, An B 2006 J. Semicond. 27 1136 (in Chinese) ［吴懿平、张金松、吴丰顺、安兵 2006 半导体学报 27 1136］
[5]	［5］Van Gurp G J, De Waard P J, Du Chatenier F J 1984 Appl. Phys. Lett. 45 1054
[6]	［6］Ye H, Basaran C, Hopkins D C, Frear D, Lin J K 2004 54th Electronic Components and Technology Conference (Las Vegas: IEEE) p988
[7]	［7］Huang A T, Gusak A M, Tu K N, Lai Y S 2006 Appl. Phys. Lett. 88 141911
[8]	［8］Chuang Y C, Liu C Y 2006 Appl. Phys. Lett. 88 174105
[9]	［9］Johns R A, Blackburn D A 1975 Thin Solid Films 25 291
[10]	］Morozumi S, Goto S, Yoshida T 1976 Scripta Mater. 10 537
[11]	］Fee D C, Johnson C E 1981 J. Nucl. Mater. 96 71
[12]	］McKee R A, Stark J P 1975 Acta Mater. 23 1145
[13]	］Van Gurp G J, De Waard P J, Du Chatenier F J 1985 J. Appl. Phys. 58 728
[14]	］Morillon B, Dilhac J M, Auriel G, Ganibal C, Anceau C 2002 32nd European Solid-State Device Research Conference(Firenze: IEEE) p327
[15]	］De Munari I, Speroni F, Reverberi M, Neva C, Lonzi L, Fantini F 1996 Microelectron. Reliab. 36 1875
[16]	］Van Gurp G J 1976 Thin Solid Films 38 295
[17]	］Oldham D J, Bleay J A, Blackburn D A 1977 Acta Mater. 25 1345
[18]	］Nguyen H V, Salm C, Krabbenbrg B, Weide-Zaage K, Bisschopb J, Mouthma A J, Kuper F G 2004 42nd Annual International Reliability Physics Symposium (Phoenix: IEEE) p619
[19]	］Ru C Q 1999 Acta Mater. 47 3571
[20]	］Ru C Q 2000 J. Mater. Sci. 35 5575
[21]	］Tan C M, Zhang G, Gan Z H 2004 IEEE Trans. Device Mater. Reliab. 4 450
[22]	］Basaran C, Ye H, Hopkins D C, Frear D, Lin J K 2005 Adv. Packaging 10 14
[23]	］Basaran C, Ye H, Hopkins D C, Frear D, Lin J K 2005 J. Electron. Packaging 127 157
[24]	］Ye H, Basaran C, Hopkins D C 2003 Appl. Phys. Lett. 82 1045
[25]	］Ye H, Basaran C, Hopkins D C 2003 Int. J. Solids Struct. 40 7269
[26]	］Roush W, Jaspal J 1982 32nd Electronic Components Conference (San Diego: IEEE) p342
[27]	］Hsiao H Y, Chen C 2007 Appl. Phys. Lett. 90 152105
[28]	］Ouyang F Y, Tu K N, Lai Y S, Gusak M A 2006 Appl. Phys. Lett. 89 221906
[29]	］Rinne G A 2003 28th Electronic Manufacturing Technology Symposium (San Jose: IEEE) p177
[30]	］Yang D, Wu B Y, Chan Y C, Tu K N 2007 J. Appl. Phys. 102 043502
[31]	］Chen H Y, Chen C, Tu K N 2008 Appl. Phys. Lett. 93 122103
[32]	］Hsiao H Y, Chen C 2009 Appl. Phys. Lett. 94 092107
[33]	］Basaran C, Li S D, Abdulhamid M F 2008 J. Appl. Phys. 103 123520
[34]	］Abdulhamid M F, Basaran C 2009 J. Electron. Packaging 131 011002
[35]	］Gu X, Chan Y C 2009 J. Appl. Phys. 105 093537
[36]	］Rinne G A 2003 Microelectron. Reliab. 43 1975
[37]	］Zhang J S 2008 Ph. D. Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese) ［张金松 2008 博士学位论文 (武汉：华中科技大学)］
[38]	］Zhang J S, Chan Y C, Wu Y P, Xi H J, Wu F S, Wu B Y 2008 J. Alloys Compd. 458 492
[39]	］Zhang J S, Xi H J, Wu Y P, Wu F S 2008 J. Semicond. 29 174 (in Chinese) ［张金松、奚弘甲、吴懿平、吴丰顺 2008 半导体学报 29 174］
[40]	］Zhang J S, Xi H J, Wu Y P, Wu F S 2009 J. Electron. Mater. 38 678

[1]	Liu Yi-Fan, Zhang Zhi-Yong. Carbon based electronic technology in post-Moore era: progress, applications and challenges. Acta Physica Sinica, 2022, 71(6): 068503. doi: 10.7498/aps.71.20212076
[2]	Zhang Ning, Xu Kai-Kai, Chen Yan-Xu, Zhu Kun-Feng, Zhao Jian-Ming, Yu Qi. Application prospect of metal-oxide-semiconductor silicon light emitting devices in integrated circuits. Acta Physica Sinica, 2019, 68(16): 167803. doi: 10.7498/aps.68.20191004
[3]	Xiao Ting-Hui, Yu Yang, Li Zhi-Yuan. Graphene-silicon hybrid photonic integrated circuits. Acta Physica Sinica, 2017, 66(21): 217802. doi: 10.7498/aps.66.217802
[4]	Dong Gang, Wu Wen-Shan, Yang Yin-Tang. Stack-through silicon via dynamic power consumption optimization in three-dimensional integrated circuit. Acta Physica Sinica, 2015, 64(2): 026601. doi: 10.7498/aps.64.026601
[5]	Zhao Ning, Zhong Yi, Huang Ming-Liang, Ma Hai-Tao, Liu Xiao-Ping. Effect of thermomigration on the growth kinetics of Cu6Sn5 at liquid-solid interfaces in Cu/Sn/Cu solder joints. Acta Physica Sinica, 2015, 64(16): 166601. doi: 10.7498/aps.64.166601
[6]	Wang Jun-Ping, Qi Su-Yang, Liu Shi-Gang. Net sensitivity for open and short model based on layout optimization. Acta Physica Sinica, 2014, 63(12): 128503. doi: 10.7498/aps.63.128503
[7]	Lai Zhan-Ping. Recent progress in preparation of material and device of two-dimensional MoS2. Acta Physica Sinica, 2013, 62(5): 056801. doi: 10.7498/aps.62.056801
[8]	Wu Zhen-Yu, Yang Yin-Tang, Chai Chang-Chun, Liu Li, Peng Jie, Wei Jing-Tian. A microstructure-based study on electromigration in Cu interconnects. Acta Physica Sinica, 2012, 61(1): 018501. doi: 10.7498/aps.61.018501
[9]	Wu Zhen-Yu, Dong Si-Wan, Liu Yi, Chai Chang-Chun, Yang Yin-Tang. Resistometric study on electromigration failure in copper interconnects. Acta Physica Sinica, 2012, 61(24): 248501. doi: 10.7498/aps.61.248501
[10]	He Liang, Du Lei, Huang Xiao-Jun, Chen Hua, Chen Wen-Hao, Sun Peng, Han Liang. Non-Gaussian analysis of noise for metal interconnection electromigration. Acta Physica Sinica, 2012, 61(20): 206601. doi: 10.7498/aps.61.206601
[11]	Zhu Zhang-Ming, Zuo Ping, Yang Yin-Tang. An analytical thermal model for 3D integrated circuit considering through silicon via. Acta Physica Sinica, 2011, 60(11): 118001. doi: 10.7498/aps.60.118001
[12]	Wu Zhen-Yu, Chai Chang-Chun, Li Yue-Jin, Liu Jing, Wang Jia-You, Yang Yin-Tang. The temperature characteristics of stress-induced voiding in Cu interconnects. Acta Physica Sinica, 2009, 58(4): 2625-2630. doi: 10.7498/aps.58.2625
[13]	Wu Zhen-Yu, Yang Yin-Tang, Chai Chang-Chun, Li Yue-Jin, Wang Jia-You, Liu Bin. The effect of via size on the stress migration of Cu interconnects. Acta Physica Sinica, 2008, 57(6): 3730-3734. doi: 10.7498/aps.57.3730
[14]	Chen Chun-Xia, Du Lei, He Liang, Hu Jin, Huang Xiao-Jun, Wei Tao. Fractal character of noise in electromigration in metel interconnection. Acta Physica Sinica, 2007, 56(11): 6674-6679. doi: 10.7498/aps.56.6674
[15]	. Research on noise correlation dimension of metallic interconnection electromigration. Acta Physica Sinica, 2007, 56(12): 7176-7182. doi: 10.7498/aps.56.7176
[16]	Xiao Xia, You Xue-Yi, Yao Su-Ying. Dispersion feature in arbitrary direction of surface acoustic wave applied to property characterization of ultra-large-scale integrated circuit interconnect films. Acta Physica Sinica, 2007, 56(4): 2428-2433. doi: 10.7498/aps.56.2428
[17]	Zhang Wen-Jie, Yi Wan-Bing, Wu Jin. Electromigration in Al interconnects and the challenges in ultra-deep submicron technology. Acta Physica Sinica, 2006, 55(10): 5424-5434. doi: 10.7498/aps.55.5424
[18]	Zong Zhao-Xiang, Du Lei, Zhuang Yi-Qi, He Liang, Wu Yong. Modeling of resistance changes based on the free volume in VLSI interconnection electromigration. Acta Physica Sinica, 2005, 54(12): 5872-5878. doi: 10.7498/aps.54.5872
[19]	He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong. Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica, 2004, 53(9): 3125-3129. doi: 10.7498/aps.53.3125
[20]	He Chao-Hui, Geng Bin, He Bao-Ping, Yao Yu-Juan, Li Yong-Hong, Peng Hong-Lun, Lin Dong-Sheng, Zhou Hui, Chen Yu-Sheng. Test methods of total dose effects in verylarge scale integrated circuits. Acta Physica Sinica, 2004, 53(1): 194-199. doi: 10.7498/aps.53.194

Catalog

Vol. 59, Issue 6 - 2010-03-20

Metrics

Abstract views: 9284
PDF Downloads: 1204
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板