A kinetic model for silicon film growth by silane/hydrogen glow discharge

Zhang Hong-Wei; Chen Gai-Rong; Zhang Li-Wei; Lu Jing-Xiao; Wen Shu-Tang

doi:10.7498/aps.59.4901

Abstract

During the process of plasma enhanced chemical vapor deposition, the growth rate of microcrystalline silicon films must be improved to reduce manufacture cost. With the increase of growth rate, the photoelectrical properties of such films will be greatly decreased. The main cause is the diffusion length of the precursors on the film surface decreases. In this study, a quantitative kinetic model was developed and the reaction balance equations of SiH3 and H were constructed, and the deposition rate, diffusion length and their influencing factors were obtained. We find that the deposition rate is determined by the fluxes of both SiH3 and H. The diffusion length of precursors is determined by the substrate temperature and the configuration of the surface silicon-hydrogen bonds. The diffusion length has a higher value when the growing film surface is covered by mono-hydrides, it has a smaller value when covered by tri-hydride, and it has a value close to zero when covered by dangling bonds.

Keywords:

plasma enhanced chemical vapor deposition /
growth mechanism /
diffusion length

Authors and contacts

(1)Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou 450052, China; (2)Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou 450052, China; Department of Physics, Zhengzhou Teachers College, Zhengzhou 450005, China; (3)School of Chemistry and Chemical Engineering, Xinxiang University, Xinxiang 453003, China; (4)School of Chemistry and Chemical Engineering, Xinxiang University, Xinxiang 453003, China; Key Laboratory

References

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Cited By

[1]	Zhang Q Y, Ma T C, Pan Z Y, Tang J Y 2000 Acta Phys. Sin. 49 297 (in Chnese) [张庆瑜、马腾才、潘正瑛、汤家镛 2000 物理学报 49 297]
[2]	Yang N, Chen G H, Zhang Y, Gong W B, Zhu H S 2000 Acta Phys. Sin. 49 2225 (in Chinese) [杨宁、陈光华、张阳、公维宾、朱鹤孙 2000 物理学报 49 2225]
[3]	Ma T B, Hu Y Z, Wang H 2007 Acta Phys. Sin. 56 480 (in Chinese) [马天宝、胡元中、王慧 2007 物理学报 56 480]
[4]	Liu Z L, Wei H L, Wang H W, Wang J Z 1999 Acta Phys. Sin. 48 1302 (in Chinese) [刘祖黎、魏合林、王汉文、王均震 1999 物理学报 48 1302]
[5]	Pflüger A, Schroder B, Bartaa H J 2003 Thin Solid Films 430 73
[6]	Zhang P F, Zheng X P, He D Y 2003 Sci. Chin. Ser. G 33 340 (in Chinese)[张佩峰、郑小平、贺德衍 2003 中国科学, G 辑 33 340]
[7]	Bogaerts A, Bleecker K, Kolev I, Madani M 2005 Surf. Coat. Tech. 200 62
[8]	Hua G S, Lou Y M, Christofides P D 2008 Chem. Eng. Sci. 63 1800
[9]	Nishimoto T, Takai M, Kondo M, Matsuda A 2000 Proc. 28th IEEE PVSC (Anchorage: IEEE Press) p876
[10]	Wen S T, Lu J X, Li Y X, Wang H Y, Zhang H W, Wen L W 2008 Mod. Phys. Lett. B 22 1727
[11]	Wen S T, Zhang L W, Lu J X, Li Y X, Du Z Y 2008 Korean J. Chem. Eng. 25 1539
[12]	Crandall J R, Luft W 1995 Prog. Photovoltaics 3 315
[13]	Street R A 1991 Hydrogenated Amorphous Silicon (New York: Cambridge University Press) p229
[14]	Gupta A 2001 (Ph. D. Dissertation) (Raleigh: North Carolina State University)
[15]	Bray K R, Parsons G N 2001 Phys. Rev. B 65 35311
[16]	Gupta A, Parsons G N 2000 J. Vac. Sci. Technol. B 18 1764
[17]	Robertson J 2000 J. Appl. Phys. 87 2608
[18]	Kessels W M M, Smets A H, Marra D C, Aydil E S, Schram D C, Sanden M C M 2001 Thin Solid Films 383 154
[19]	Doren D J 1996 Advances in Chemical Physics (New York: John Wiley & Sons Inc) p124
[20]	Ramalingam S, Maroudas D, Aydil E S 1999 J. Appl. Phys. 86 2872
[21]	Dewarrat R, Robertson J 2002 J. Non-Cryst. Solids 299 48
[22]	Keudell A, AbeIson J R 1999 Phys. Rev. B 59 5791
[23]	Dinger A, Lutterloh C, Kuppers J 1999 Chem. Phys. Lett. 311 202
[24]	Buntin S A 1996 J. Chem. Phys. 105 2066
[25]	Widdra W, Yi S I, Maboudian R, Briggs G A D, Weinberg W H 1995 Phys. Rev. Lett. 74 2074
[26]	Koleske D D, Gates S M, Jackson B 1994 J. Chem. Phys. 101 3301
[27]	Koleske D D, Gates S M, Schultz J A 1993 J. Chem. Phys. 99 5619
[28]	Sinniah K, Sherman M G, Lewis L B, Weinberg W H, Yates J T, Janda K C 1990 J. Chem. Phys. 92 5700
[29]	Ramalingarn S, Maroudas D, Aydil E S, Walch S P 1998 Surf. Sci. 418 L8
[30]	Perrin I, Shiratani M, Kae-Nune P, Videlot H, Jolly J, Guillon J 1998 J. Vac. Sci. Tech. A 16 278
[31]	Keudell A, Abelson J R 1999 Phys. Rev. B 59 5791
[32]	Kitahar K, Murakami S, Hara A, Joshi C 1998 Appl. Phys. Lett. 72 19
[33]	Itabashi N, Nishiwaki N, Magane M, Goto T, Matsuda A, Yamada C, Hirota E 1990 Jpn. J.Appl. Phys. 29 585
[34]	Tachibana K, Mukai T, Harima H 1991 Jpn. J. Appl. Phys. 30 L1208
[35]	Wen S T, Zhang L W, Lu J X, Feng X L, Guo X J, Shen C H, Xu Y H, Li B S 2008 Int. J. Mod. Phys. B 23 1147
[36]	Gao X Y, Li R, Chen Y S, Lu J X, Liu P, Feng T H, Wang H J, Yang S E 2006 Acta Phys. Sin. 55 98 (in Chinese) [郜小勇、李瑞、陈永生、卢景霄、刘萍、冯团辉、王红娟、杨仕娥 2006 物理学报 55 98]
[37]	Zhang X D, Zhao Y, Gao Y T, Chen F, Zhu F, Wei C C, Sun J, Geng X H, Xiong S Z 2006 Acta Phys. Sin. 55 6698 (in Chinese) [张晓丹、赵颖、高艳涛、陈飞、朱锋、魏长春、孙建、耿新华、熊绍珍 2006 物理学报 55 6698]

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Vol. 59, Issue 7 - 2010-04-05

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