Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer

Huang Rui; Wang Dan-Qing; Song Jie; Ding Hong-Lin; Wang Xiang; Guo Yan-Qing; Chen Kun-Ji; Xu Jun; Li Wei; Ma Zhong-Yuan

doi:10.7498/aps.59.5823

Abstract

SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently thermal annealing and laser irradiation with the aim of fabrication three-dimensional constrained, size-controlled and well-regulated Si nanocrystals. The experimental results show that Si nanocrystals grow in the Si-rich SiN sublayer. Furthermore, the grain size can be controlled according to the thick of Si-rich SiN. It is also found that the crystalline fraction of the multilayers irradiated by laser is significantly higher than that by thermal annealing. The devices that employing the laser-irradiated multilayer as luminescent active layer exhibit an enhanced visible electroluminescence and the external quantum efficiency is improved by 40% in comparison with the device without annealing.

Keywords:

Authors and contacts

(1)Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China; (2)State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China

References

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Cited By

[1]	Wang M, Li D, Yuan Z, Yang D, Que D 2007 Appl. Phys. Lett. 90 131903
[2]	Hao H L, Wu L K, Shen W Z 2007 Appl. Phys. Lett. 92 121922
[3]	Chen K, Huang X, Xu J, Feng D 1992 Appl. Phys. Lett. 61 2069
[4]	Liu Y, Chen K, Qiao F, Huang X, Han P, Qian B, Ma Z, Li W, Xu J, Chen K 2006 Acta Phys. Sin. 55 5403 (in Chinese)[刘艳松、陈铠、乔峰、黄信凡、韩培高、钱波、马忠元、李伟、徐骏、陈坤基 2006 物理学报 55 5403]
[5]	Zacharias M, Blasing J, Veit P, Tsybeskov L, Hirschman K, Fauchet P M, 1999 Appl. Phys. Letts. 74 2614
[6]	Qin G G, Chen Y, Ran G Z, Zhang B R, Wang S H, Qin G, Ma Z C, Zong W H, Ren S F 2001 J. Phys.:Condens. Matter 13 11751
[7]	Huang R, Chen K J, Dong H P, Wang D Q, Ding H L, Li W, Xu J, Ma Z Y, Xu L 2007 Appl. Phys. Lett. 91 111104
[8]	Kamei T, Stradins P, Mastsuda A, 1999 Appl. Phys. Lett. 74 1707
[9]	Zi J, Buscher H, Falter C, Ludwig W, Zhang K, Xie X 1996 Appl. Phys. Lett. 69 200

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Catalog

Vol. 59, Issue 8 - 2010-04-20

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