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The ZnO nanorods, primarily aligned perpendicular to the substrate, have been fabricated by hydrothermal decomposition. The scanning electron microscopy and photoluminescence method were used to characterize their morphology and optical properties, respectively. The field emission properties were also studied. The results indicate that the ZnO nanorods present good morphology, structure and good field emission property. The on-set field is 2.8 V/μm at a current density of 1 μA/cm2. The emission current density can reach 0.67 mA/cm2 at 6.4 V/μm. The field emission enhancement factor is 3660. Fluctuation of the current density is less than 25% at 4.5 V/μm for 5 hours. In the organic/inorganic electroluminescence heterostructure, with the ZnO nanorods as the electron transport layer and the m-MTDATA(4,4',4″-tris{N,(3-methylphenyl)-N-phenylamino}-triphenylamine) as the hole transport layer, the ultra-violet emission of ZnO nanorods was obtained with a 40 nm blue-shift compared with the photoluminescence of the ZnO nanorods.
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Keywords:
- ZnO nanorods /
- field emission /
- hydrothermal decomposition /
- organic/inorganic electroluminescence heterostructure
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[1] Wang Z L 2009 Mat.Sci. Eng. R 64 33
[2] Chang Y L, Zhang Q F, Sun H, Wu J L 2007 Acta Phys. Sin. 56 2399(in Chinese)[常艳玲、 张琦锋、 孙 晖、 吴锦雷 2007 物理学报 56 2399]
[3] Willander M, Nur O, Zhao Q X, Yang L L, Lorenz M, Cao B Q, Pérez Zúniga J, Czekalla C, Zimmermann G, Grundmann M, Bakin A, Behrends A, Al-Suleiman M, El-Shaer A, Mofor Che A, Postels B, Waag A, Boukos N, Travlos A, Kwack H S, Guinard J, Dang Si Le D 2009 Nanotechnology 20 332001
[4] Wang J X, Sun X W, Wei A, Lei Y, Cai X P, Li C M, Dong Z L 2006 Appl. Phys. Lett. 88 233106
[5] Lee Y J, Lloyd T M, Olson C D, Grubbs K R, Lu P, Davis J R, Voigt A J, Hsu P W J 2009 J. Phys. Chem. C 113 15778
[6] Zhang Q F, Rong Y, Chen X X, Zhang G M, Zhang Z X, Xue Z Q, Zhang C Q, Wu J L 2006 Chinese Journal of Semiconductors 27 1225 (in Chinese) [张琦锋、 戎 懿、 陈贤祥、 张耿民、 张兆祥、 薛增泉、 陈长琦、 吴锦雷 2006 半导体学报 27 1225]
[7] Chang M, Cao X L, Zeng H B 2009 J. Phys. Chem. C 113 15544
[8] Wu X, Cai W, Qu F Y 2009 Acta Phys. Sin. 58 8044(in Chinese)[武 祥、 蔡 伟、 曲凤玉2009物理学报 58 8044]
[9] Wang C, Wang F F, Fu X Q, Wang T H 2007 Chin. Phys. B16 3545
[10] Jeong SH, Hwang HY, Lee KH, Jeong Y 2001 Appl. Phys. Lett. 78 2052
[11] Li C, Yang Y, Sun X W, Lei W, Zhang X B, Wang B P, Wang J X, Tay B K, Ye J D, Lo G Q, Kwong D L 2007 Nanotechnology 18 135604
[12] Hsieh YP, Chen H Y, Lin M Z, Shiu S C, Hofmann M, Chern M Y, Jia X, Yang Y J, Chang H J, Huang H M, Tseng S C, Chen L C, Chen K H, Lin C F, Liang C T, Chen Y F 2009 Nano Lett. 9 1839
[13] Li X, Zhai F F, Liu Y, Cao M S, Wang F C, Zhang X X 2007 Chin. Phys. 16 2769
[14] Wang Y X, zhang Q F, Sun H, Chang Y L, Wu J L 2008 Acta Phys. Sin. 57 1141 (in Chinese) [王艳新、 张琦锋、 孙 晖、 常艳玲、 吴锦雷 2008物理学报 57 1141]
[15] Sun X W, Huang J Z, Wang J X, Xu Z 2008 Nano Lett. 8 1219
[16] Chang C C, Chang C S 2005 Solid State Commun. 135 765
[17] Lee C J, Lee T J, Lyu S C, Zhang Y, Ruh H, Lee H J 2002 Appl. Phys. Lett. 81 3648
[18] Suh J S, Jeong K S, Lee J S, Han I 2002 Appl. Phys. Let. 80 2392
[19] Wei A, Sun X W, Xu C X, Dong Z L, Yu M B, Huang W 2006 Appl. Phys. Lett. 88 213102
[20] Cheng J P, Guo R Y, Wang Q M 2004 Appl. Phys. Lett. 85 5140
[21] Yang Y H, Wang C X, Wang B, Xu N S, Yang G W 2005 Chem. Phys. Lett. 403 248
[22] Lu J G, Fujita S, Kawaharamura T, Nishinaka H, Kamada Y, Ohshima T, Ye Z Z, Zeng Y J, Zhang Y Z, Zhu L P, He H P, Zhao B H 2007 J. Appl. Phys. 101 083705
[23] Nadarajah A, Word R C, Meiss J, Knenkamp R 2008 Nano Lett. 8 534
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