| [1] |
You Ming-Hui, Li Xue, Li Shi-Jun, Liu Guo-Jun. Growth of lattice matched InAs/AlSb superlattices by molecular beam epitaxy. Acta Physica Sinica,
2023, 72(1): 014203.
doi: 10.7498/aps.72.20221383
|
| [2] |
Li Geng, Guo Hui, Gao Hong-Jun. Novel two-dimensional materials and their heterostructures constructed in ultra-high vacuum. Acta Physica Sinica,
2022, 71(10): 106801.
doi: 10.7498/aps.71.20212407
|
| [3] |
Zheng Xiao-Hu, Zhang Jian-Feng, Du Rui-Rui. Comparative study on epitaxial growth of stanene and bismuthene on InSb(111) substrate. Acta Physica Sinica,
2022, 71(18): 186401.
doi: 10.7498/aps.71.20221024
|
| [4] |
Li Pei-Gen, Zhang Ji-Hai, Tao Ye, Zhong Ding-Yong. Two-dimensional magnetic transition metal halides: molecular beam epitaxy growth and physical property modulation. Acta Physica Sinica,
2022, 71(12): 127505.
doi: 10.7498/aps.71.20220727
|
| [5] |
Kang Yu-Bin, Tang Ji-Long, Li Ke-Xue, Li Xiang, Hou Xiao-Bing, Chu Xue-Ying, Lin Feng-Yuan, Wang Xiao-Hua, Wei Zhi-Peng. Studies of Be, Si doping regulated GaAs nanowires for phase transition and optical properties. Acta Physica Sinica,
2021, 70(20): 207804.
doi: 10.7498/aps.70.20210782
|
| [6] |
Wang Xing-Yue, Zhang Hui, Ruan Zi-Lin, Hao Zhen-Liang, Yang Xiao-Tian, Cai Jin-Ming, Lu Jian-Chen. Research progress of monolayer two-dimensional atomic crystal materials grown by molecular beam epitaxy in ultra-high vacuum conditions. Acta Physica Sinica,
2020, 69(11): 118101.
doi: 10.7498/aps.69.20200174
|
| [7] |
Xiao Jia-Xing, Lu Jun, Zhu Li-Jun, Zhao Jian-Hua. Perpendicular magnetic properties of ultrathin L10-Mn1.67Ga films grown by molecular-beam epitaxy. Acta Physica Sinica,
2016, 65(11): 118105.
doi: 10.7498/aps.65.118105
|
| [8] |
Zhang Ma-Lin, Ge Jian-Feng, Duan Ming-Chao, Yao Gang, Liu Zhi-Long, Guan Dan-Dan, Li Yao-Yi, Qian Dong, Liu Can-Hua, Jia Jin-Feng. Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001). Acta Physica Sinica,
2016, 65(12): 127401.
doi: 10.7498/aps.65.127401
|
| [9] |
Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan. Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy. Acta Physica Sinica,
2015, 64(17): 177802.
doi: 10.7498/aps.64.177802
|
| [10] |
Zhu Meng-Yao, Lu Jun, Ma Jia-Lin, Li Li-Xia, Wang Hai-Long, Pan Dong, Zhao Jian-Hua. Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films. Acta Physica Sinica,
2015, 64(7): 077501.
doi: 10.7498/aps.64.077501
|
| [11] |
Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun. Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica,
2014, 63(2): 027401.
doi: 10.7498/aps.63.027401
|
| [12] |
Su Shao-Jian, Zhang Dong-Liang, Zhang Guang-Ze, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2013, 62(5): 058101.
doi: 10.7498/aps.62.058101
|
| [13] |
Nie Shuai-Hua, Zhu Li-Jun, Pan Dong, Lu Jun, Zhao Jian-Hua. Structural characterization and magnetic properties of perpendicularly magnetized MnAl films grown by molecular-beam epitaxy. Acta Physica Sinica,
2013, 62(17): 178103.
doi: 10.7498/aps.62.178103
|
| [14] |
Ding Zhao, Wei Jun, Yang Zai-Rong, Luo Zi-Jiang, He Ye-Quan, Zhou Xun, He Hao, Deng Chao-Yong. Study on temperature calibration and surface phase transition of GaAs crystal substrate in MBE growth by RHEED real-time monitoring. Acta Physica Sinica,
2011, 60(1): 016109.
doi: 10.7498/aps.60.016109
|
| [15] |
Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming. Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2011, 60(2): 028101.
doi: 10.7498/aps.60.028101
|
| [16] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica,
2010, 59(11): 8026-8030.
doi: 10.7498/aps.59.8026
|
| [17] |
Cui Xiu-Zhi, Zhang Tian-Chong, Mei Zeng-Xia, Liu Zhang-Long, Liu Yao-Ping, Guo Yang, Su Xi-Yu, Xue Qi-Kun, Du Xiao-Long. Influence of wet etching on the morphologies of Si patterned substrates and ZnO epilayers. Acta Physica Sinica,
2009, 58(1): 309-314.
doi: 10.7498/aps.58.309
|
| [18] |
Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng. Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica,
2005, 54(6): 2950-2954.
doi: 10.7498/aps.54.2950
|
| [19] |
JING CHAO, JIN XIAO-FENG, DONG GUO-SHENG, GONG XIAO-YAN, YU LI-MING, ZHENG WEI-MIN. EXCHANGE BIASING IN MOLECULAR-BEAM-EPITAXY-GROWN Fe/Fe50Mn50 BILAYERS. Acta Physica Sinica,
2000, 49(10): 2022-2026.
doi: 10.7498/aps.49.2022
|
| [20] |
LING YONG, XUE QI-KUN, CHEN HAO-MING, T.SAKURAI. STUDY ON GROWTH OF C60 MOLECULES ON GaAs(001) SUBSTRATE BY SCANNING TUNNELING MICROSCOPY. Acta Physica Sinica,
1997, 46(8): 1559-1566.
doi: 10.7498/aps.46.1559
|
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