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The Ge1Sb2Te4 and Ge2Sb2Te5 thin films were deposited on quartz and silicon substrates by radio frequency magnetron sputtering from Ge1Sb2Te4 and Ge2Sb2Te5alloy targets. Structure properties and electrical transport characteristics of Ge1Sb2Te4 and Ge2Sb2Te5 thin films were studied and compared. X-ray diffraction spectra and atomic force microscopic images were used to characterize the structure of Ge1Sb2Te4 and Ge2Sb2Te5before and after thermal annealing. With increasing annealing temperature, Ge1Sb2Te4crystallized gradually and transformed to polycrystalline state from the amorphous state. Surface of Ge1Sb2Te4 thin films was uniform nanoparticles with roughness less than 10 nm. After thermal annealing, Ge2Sb2Te5 also transformed to polycrystalline state from amorphous state, but its surface morphology did not change significantly compared with the as-deposited film. Results of Hall effect measurement indicated the carrier concentrations of both the as-deposited and annealed films of Ge1Sb2Te4 were three orders of magnitude larger than those of Ge2Sb2Te5. From the above results, we conclude that Ge1Sb2Te4 tends to be more conductive than Ge2Sb2Te5 owing to the larger carrier concentration. Results of resistance versus time measurements under isothermal condition suggested Ge2Sb2Te5is more thermally stable and better fit for data storage than Ge1Sb2Te4.
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Keywords:
- chalcogenide phase change material /
- Ge1Sb2Te4 /
- Ge2Sb2Te5
[1] Ovshinsky S R 1968 Phys. Rev. Lett. 21 1450
[2] Lai S, Lowrey T 2001 IEEE IEDM Tech. Dig. 1 803
[3] Pirovano A, Lacaita A L, Benvenuti A, Pellizzer F, Bez R 2004 IEEE Trans. Electr. Dev. 51 452
[4] Yamada N, Ohno E, Nishiuchi K, Akahira N, Takao M 1991 J. Appl. Phys. 69 2849
[5] Abrikosov N K, Danilova-Dobryakova G T, Auk I A 1965 SSSR. Neorg. Mater. 1 204
[6] Kolobov A V, Fons P, Frenkel A I, Ankudinov A L, Tominaga J J, Uruga T 2004 Nat. Mater. 3 703
[7] Wuttig M 2005 Nat. Mater. 4 265
[8] Sun Z M, Zhou J, Blomqvist A, Johansson B, Ahuja R 2009 Phys. Rev. Lett. 21 1450
[9] Shelby R M, Raoux 2009 J. Appl. Phys. 105 104902
[10] Lai Y F, Feng J, Qiao B W, Lin Y, Lin Y Y, Tang T A, Cai B C, Chen B M 2006 Acta Phys. Sin. 55 4347 (in Chinese)[赖云峰、冯 洁、乔保卫、凌 云、林殷茵、汤庭鳌、蔡炳初、陈邦明 2006 物理学报 55 4347]
[11] Zhang Z F, Zhang Y, Feng J, Cai Y F, Lin Y Y, Cai B C, Tang T A,Chen B M 2007 Acta Phys. Sin. 56 4224 (in Chinese)[张祖发、张 胤、冯 洁、蔡燕飞、林殷茵、蔡炳初、汤庭鳌、陈邦明 2007 物理学报 56 4224]
[12] Weidenhof V, Friedrich I 1999 J. Appl. Phys.86 5879
[13] Zhang T, Song Z T, Liu B, Feng G S, Feng S L, Chen B 2007 Thin Solid Films 516 42
[14] Zhang T, Liu B, Xia J L, Song Z T, Feng S L, Chen B 2004 Chin. Phys. Lett. 21 741
[15] Baily S A, Emin D, Li H 2006 Solid State Commun.139 161
[16] Liu E K, Zhu B S, Luo J S Semiconductor Physics (Beijing: National Defense Industry Press) p85 (in Chinese) [刘恩科、朱秉升、罗晋生 半导体物理学 (北京: 国防工业出版社) 第85页]
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[1] Ovshinsky S R 1968 Phys. Rev. Lett. 21 1450
[2] Lai S, Lowrey T 2001 IEEE IEDM Tech. Dig. 1 803
[3] Pirovano A, Lacaita A L, Benvenuti A, Pellizzer F, Bez R 2004 IEEE Trans. Electr. Dev. 51 452
[4] Yamada N, Ohno E, Nishiuchi K, Akahira N, Takao M 1991 J. Appl. Phys. 69 2849
[5] Abrikosov N K, Danilova-Dobryakova G T, Auk I A 1965 SSSR. Neorg. Mater. 1 204
[6] Kolobov A V, Fons P, Frenkel A I, Ankudinov A L, Tominaga J J, Uruga T 2004 Nat. Mater. 3 703
[7] Wuttig M 2005 Nat. Mater. 4 265
[8] Sun Z M, Zhou J, Blomqvist A, Johansson B, Ahuja R 2009 Phys. Rev. Lett. 21 1450
[9] Shelby R M, Raoux 2009 J. Appl. Phys. 105 104902
[10] Lai Y F, Feng J, Qiao B W, Lin Y, Lin Y Y, Tang T A, Cai B C, Chen B M 2006 Acta Phys. Sin. 55 4347 (in Chinese)[赖云峰、冯 洁、乔保卫、凌 云、林殷茵、汤庭鳌、蔡炳初、陈邦明 2006 物理学报 55 4347]
[11] Zhang Z F, Zhang Y, Feng J, Cai Y F, Lin Y Y, Cai B C, Tang T A,Chen B M 2007 Acta Phys. Sin. 56 4224 (in Chinese)[张祖发、张 胤、冯 洁、蔡燕飞、林殷茵、蔡炳初、汤庭鳌、陈邦明 2007 物理学报 56 4224]
[12] Weidenhof V, Friedrich I 1999 J. Appl. Phys.86 5879
[13] Zhang T, Song Z T, Liu B, Feng G S, Feng S L, Chen B 2007 Thin Solid Films 516 42
[14] Zhang T, Liu B, Xia J L, Song Z T, Feng S L, Chen B 2004 Chin. Phys. Lett. 21 741
[15] Baily S A, Emin D, Li H 2006 Solid State Commun.139 161
[16] Liu E K, Zhu B S, Luo J S Semiconductor Physics (Beijing: National Defense Industry Press) p85 (in Chinese) [刘恩科、朱秉升、罗晋生 半导体物理学 (北京: 国防工业出版社) 第85页]
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