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The crystallization and microstructure change of self-organization and the related conduction mechanisms of polymer semiconductor active thin layer in polymer organic field-effect transistors (OFET) are investigated by synchrotron radiation grazing incident X-ray diffraction (GIXRD) for understanding the relationships between polymer self-organization and charge carry. The change of the crystalline microstructure of RR-P3HT clarifies the effect of SAMs for improving the interface between the insulator layer and the organic semiconductor layer. The self-organiztion of RR-P3HT modified by SAMs improves the crystalliztion to pack form the thiophene rings along the perpendicular direction of substrate and results in that the π-π interchains are stacked to parallel the substrate. The two-dimensional charge transport is improved. Furthermore, we find that two-dimensional, conjugated, and self-organized crystalline lamellae are easier to gain with slow grown film than with fast grown film.
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Keywords:
- regioregular poly(3-hexylthiophene) organic field-effect transistors /
- synchrotron radiation grazing incident X-ray diffraction /
- self-organization /
- microstructure
[1] Yuan G C, Xu Z, Zhao S L, Zhang F J, Huang J Z, Huang J Y, Tian X Y, Xu X R 2008 Chin. Phys. B 17 3822
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[4] Killampalli A S, Engstrom J R 2006 Appl. Phys. Lett. 88 143125
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[6] Possanner S K, Zojer K, Pacher P, Zojer E, Schürrer F 2009 Adv. Func. Mater. 19 958
[7] Sirringhaus H 2009 Proceedings of the IEEE 97 1570
[8] Bao Z, Dodabalapur A, Lovinger A J 1996 Appl. Phys. Lett. 69 4108
[9] Sirringhaus H, Brown P J, Friend R H, Nielsen M M, Bechgaard K, Langeveld-Voss B M W, Spiering A J H, Janssen R A J, Meijer E W, Herwig P, de Leeuw D M 1999 Nature 401 685
[10] Lan Y K, Huang C 2008 J. Phys. Chem. B 112 14857
[11] Ong B S, Wu Y, Liu P, Gardner S 2004 J. Am. Chem. Soc. 126 3378
[12] Jiang X M, Jia Q J, Zheng W L, Liu P, Xi D C, Jiang Z M, Wang X 2000 High Energy Phys. Nucl. Phys. 24 424 (in Chinese) [姜晓明、贾全杰、郑文莉、刘 鹏、冼鼎昌、蒋最敏、王 迅 2000 高能物理与核物理 24 424]
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[15] Fuoss P H, Liang K S, Eisenberger P 1989 Synchrotron Radiation Research: Advances in Surface Science( New York: Plenum Press)
[16] Xia Z F, Qiu X L, Zhu J Q, Zhang Z W 2002 Piezoelectrics and Acoustooptics 24 208 (in Chinese) [夏钟福、邱勋林、朱伽倩、张冶文2002 压电与声光 24 208]
[17] Mcculloch I, Heeney M, Bailey C, Genevicius K, Macdonald I, Shkunov M, Sprarrowe D, Wagnger R, Zhang W, Chabinyc M L, Kline R J, Mcgehee M D, Toney M F 2006 Nature Materials 5 328
[18] Oss C J V, Giese Jr R F, Good R J 1990 Langmuir 6 1711
[19] Zhang J D, Mo Z S 2009 University Chem. 24 1(in Chinese) [张吉东、莫志深2009大学化学24 1]
[20] Kim D H, Park Y D, Jang Y, Yang H, Kim Y H, Han J I, Moon D G, Park S, Chang T, Chang C, Joo M, Ryu C Y 2005 Adv. Funct. Mater. 15 77
[21] Loo Y 2007 AIChE Journal 53 1066
[22] Kline R J, Mcgehee M D, Toney M F 2006 Nature Materials 5 222
[23] Chang J F, Sun B, Breiby D W, Nielsen M M, Slling T I, Giles M, McCulloch I, Sirringhaus H 2004 Chem. Mater. 16 4772
[24] Sun B, Kang C Y, Li R P, Liu Z L, Tang J, Xu P S, Pan G Q 2009 Nucl. Tech. 32 492 (in Chinese) [孙 柏、康朝阳、李锐鹏、刘忠良、唐 军、徐彭寿、潘国强 2009核技术32 492]
[25] Verilhac J M, Blevennec G L, Djurado D, Rieutord F, Chouiki M, Travers J P, Pron A 2006 Synth. Met. 156 815
[26] Yang H, LeFevre S W, Ryu C Y, Bao Z 2007 Appl. Phys. Lett.90 172116
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[1] Yuan G C, Xu Z, Zhao S L, Zhang F J, Huang J Z, Huang J Y, Tian X Y, Xu X R 2008 Chin. Phys. B 17 3822
[2] Yuan G C, Xu Z, Zhao S L, Zhang F J, Jiang W W, Song D D, Zhu H N, Li S Y, Huang J Y, Huang H, Xu X R 2008 Chin. Phys. B 17 1887
[3] Tian X Y, Xu Z, Zhao S L, Zhang F J, Xu X R, Yuan G C, Li J, Sun Q J 2008 Chin. Phys. B 19 018103
[4] Killampalli A S, Engstrom J R 2006 Appl. Phys. Lett. 88 143125
[5] DiBenedetto S A, Facchetti A, Ratner M A, Marks T J 2009 Adv. Mater. 21 1407
[6] Possanner S K, Zojer K, Pacher P, Zojer E, Schürrer F 2009 Adv. Func. Mater. 19 958
[7] Sirringhaus H 2009 Proceedings of the IEEE 97 1570
[8] Bao Z, Dodabalapur A, Lovinger A J 1996 Appl. Phys. Lett. 69 4108
[9] Sirringhaus H, Brown P J, Friend R H, Nielsen M M, Bechgaard K, Langeveld-Voss B M W, Spiering A J H, Janssen R A J, Meijer E W, Herwig P, de Leeuw D M 1999 Nature 401 685
[10] Lan Y K, Huang C 2008 J. Phys. Chem. B 112 14857
[11] Ong B S, Wu Y, Liu P, Gardner S 2004 J. Am. Chem. Soc. 126 3378
[12] Jiang X M, Jia Q J, Zheng W L, Liu P, Xi D C, Jiang Z M, Wang X 2000 High Energy Phys. Nucl. Phys. 24 424 (in Chinese) [姜晓明、贾全杰、郑文莉、刘 鹏、冼鼎昌、蒋最敏、王 迅 2000 高能物理与核物理 24 424]
[13] Cowley R A, Ryan T W 1987 J. Phys. D: Appl. Phys. 20 61
[14] Gay J M, Stocker P, Rhemore F 1993 J. Appl. Phys 73 816
[15] Fuoss P H, Liang K S, Eisenberger P 1989 Synchrotron Radiation Research: Advances in Surface Science( New York: Plenum Press)
[16] Xia Z F, Qiu X L, Zhu J Q, Zhang Z W 2002 Piezoelectrics and Acoustooptics 24 208 (in Chinese) [夏钟福、邱勋林、朱伽倩、张冶文2002 压电与声光 24 208]
[17] Mcculloch I, Heeney M, Bailey C, Genevicius K, Macdonald I, Shkunov M, Sprarrowe D, Wagnger R, Zhang W, Chabinyc M L, Kline R J, Mcgehee M D, Toney M F 2006 Nature Materials 5 328
[18] Oss C J V, Giese Jr R F, Good R J 1990 Langmuir 6 1711
[19] Zhang J D, Mo Z S 2009 University Chem. 24 1(in Chinese) [张吉东、莫志深2009大学化学24 1]
[20] Kim D H, Park Y D, Jang Y, Yang H, Kim Y H, Han J I, Moon D G, Park S, Chang T, Chang C, Joo M, Ryu C Y 2005 Adv. Funct. Mater. 15 77
[21] Loo Y 2007 AIChE Journal 53 1066
[22] Kline R J, Mcgehee M D, Toney M F 2006 Nature Materials 5 222
[23] Chang J F, Sun B, Breiby D W, Nielsen M M, Slling T I, Giles M, McCulloch I, Sirringhaus H 2004 Chem. Mater. 16 4772
[24] Sun B, Kang C Y, Li R P, Liu Z L, Tang J, Xu P S, Pan G Q 2009 Nucl. Tech. 32 492 (in Chinese) [孙 柏、康朝阳、李锐鹏、刘忠良、唐 军、徐彭寿、潘国强 2009核技术32 492]
[25] Verilhac J M, Blevennec G L, Djurado D, Rieutord F, Chouiki M, Travers J P, Pron A 2006 Synth. Met. 156 815
[26] Yang H, LeFevre S W, Ryu C Y, Bao Z 2007 Appl. Phys. Lett.90 172116
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