Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer

Zhang Yun-Yan; Fan Guang-Han; Zhang Yong; Zheng Shu-Wen

doi:10.7498/aps.60.028503

Abstract

A two-dimensional simulation of electrical and optical characteristics of dual-wavelength LED (light-emitting diode) with doped GaN interval layer is conducted with software.It shows that by the use of doped GaN interval layer, we can solve the luminescence intensity disparity of the two kinds of quantum wells in dual-wavelength LED. And through control of the thickness of the interval layer, we can adjust the relative luminescence intensity of the two kinds of quantum wells. Therefore, the effect of spectrum-control in dual-wavelength LED is due to the blocking effect of holes or electrons by doped GaN interval layer.

Keywords:

Authors and contacts

1.
Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

References

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Cited By

[1]	Zheng D S, Qian K Y, Luo Y 2005 Semicond. Optoelectro. 26 87
[2]	Shen G D, Zhang N G, Liu J P, Niu N H, Li T, Xing Y H, Lin Q M, Guo X 2007 Semicond. Optoelectron. 28 349
[3]	Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[4]	Qi Y D, Liang H,Tang W, Lu Z D, Lau K M 2004 J. Cryst. Growth 272 333
[5]	Damilano B,Grandjean N,Pernot C,Massies J 2001 J. Appl. Phys. 40 918
[6]	Li Y L, Gessmann T H 2003 J. Appl. Phys. 94 2167
[7]	Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[8]	Chen H S, Yeh D M, Lu C F 2006 IEEE Photon.Technol.Lett. 18 1430
[9]	Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[10]	Chuang S L, Chang C S 1997 Semicond. Sci. Technol. 12 252
[11]	Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[12]	Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[13]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[14]	Fiorentini V, Bernardini F, Ambacher O 2002 Appl. Phys. Lett. 80 1204

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Catalog

Vol. 60, Issue 2 - 2011-01-20

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