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This paper expresses the experiential relationship between Fermi level and the density of two-dimensional electron gas, based on the capacitance voltage (C-V) characteristics of the AlGaN/AlN/GaN high electron mobility transistor (HEMT) on sapphire substrate. The expression provides important references for establishing the device charge control model and simpliying the transconductance and capacitance. Parameter α is introduced for describing the ability for the two-dimensional potential well to restrict electrons, and we believe that the smaller the value of α, the stronger the restricting ability is. A coherent fitting effect, compared with the measurement, is obtained by making use of the experiential relationship said above.
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Keywords:
- HEMT /
- Fermi level /
- C-V characteristics /
- the ability of restricting
[1] Jimenez J L, Chowdhury U 2008 IEEE 46th Annual International Reliability Physics Symposium Phoenix, USA, APR 27-MAY 01, 2008 p429
[2] Guo L, Wang X, Wang C, Xiao H, Ran J, Luo W, Wang X, Wang B, Fang C, Hu G 2008 Microelectronics Journal 39 777
[3] Lisesivdin S B, Balkan N, Makarovsky O, Patane A, Yildiz A, Caliskan M D, Kasap M, Ozcelik S, Ozbay E 2009 Journal of Applied Physics 105 6
[4] Qian F, Leach J H, Jinqiao X, Ozgur U, Morkoc H, Zhou L, Smith D J 2009 Proceedings of the International Society for Optical Engineering San Jose, USA, January 26—29, 2009 p14
[5] Kumar S P, Agrawal A, Kabra S, Gupta M, Gupta R S 2006 Microelectronics Journal 37 1339
[6] Farahmand M, Garetto C, Bellotti E, Brennan K F, Goano M, Ghillino E, Ghione G, Albrecht J D and Ruden P P 2001 IEEE Transactions on Electron Devices 48 535
[7] Parvesh G, Sujata P, Subhasis H, Mridula G, Gupta R S 2007 Microelectron. J. 38 848
[8] Liu J, Hao Y, Feng Q, Wang C, Zhang J C, Guo L L 2007 Acta Phys. Sin. 56 3483 (in Chinese) [刘 杰、郝 跃、冯 倩、王 冲、张进城、郭亮良 2008 物理学报 56 3483]
[9] Zhang J F, Wang C, Zhang J C, Hao Y 2006 Chin. Phys. 15 1060
[10] Zhang J F, Zhang J C, Hao Y 2004 Chin. Phys. 13 1334
[11] Wang X H, Zhao M, Liu X Y, Pu Y, Zheng Y K, Wei K 2010 Chin. Phys. B 19 097302
[12] Delagebeaudeuf D, Linh N T 1982 IEEE Transactions on Electron Devices 29 955
[13] Aziz M A, El-Banna M 1996 Thirteenth National Radio Science Conference Cairo, Egypt, March 19—21,1996 p547
[14] Frank S, Sankar D S 1984 Phys. Rev. B 30 840
[15] Norris G B, Look D C, Kopp W, Klem J, Morkoc H 1985 Appl. Phys. Lett. 47 423
[16] Kwangman P, Hong Bae K, Kae Dal K 1987 IEEE Transactions on Electron Devices 34 2422
[17] Cazaux J L, Ng G I, Pavlidis D, Chau H F 1988 IEEE Transactions on Electron Devices 35 1223
[18] Ando Y, Itoh T 1988 IEEE Transactions on Electron Devices 35 2295
[19] Shey A J, Ku W H 1988 IEEE Electron Device Letters 9 624
[20] Kokorev M F, Maleev N A 1996 Solid-State Electronics 39 297
[21] Liu W L, Chen Y L, Balandin A A, Wang K L 2006 Journal of Nanoelectronics and Optoelectronics 1 258
[22] Moloney M J, Ponse F, Morkoc H 1985 IEEE Transactions on Electron Devices 32 1675
[23] Karmalkar S 1997 IEEE Transactions on Electron Devices 44 862
[24] Ketterson A A, Morkoc H 1986 IEEE Transactions on Electron Devices 33 1626
[25] Anwar A F M, Liu K W 1993 IEEE Transactions on Electron Devices 40 1174
[26] Ando Y, Itoh T 1990 IEEE Transactions on Electron Devices 37 67
[27] Tong K Y 1991 Electronics Letters 27 668
[28] Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T, Sullivan G J, Redwing J M 2000 Journal of Applied Physics 87 8070
[29] Khondker A N, Anwar A F M, Islam M A, Limoncelli L, Wilson D 1986 IEEE Transactions on Electron Devices 33 1825
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[1] Jimenez J L, Chowdhury U 2008 IEEE 46th Annual International Reliability Physics Symposium Phoenix, USA, APR 27-MAY 01, 2008 p429
[2] Guo L, Wang X, Wang C, Xiao H, Ran J, Luo W, Wang X, Wang B, Fang C, Hu G 2008 Microelectronics Journal 39 777
[3] Lisesivdin S B, Balkan N, Makarovsky O, Patane A, Yildiz A, Caliskan M D, Kasap M, Ozcelik S, Ozbay E 2009 Journal of Applied Physics 105 6
[4] Qian F, Leach J H, Jinqiao X, Ozgur U, Morkoc H, Zhou L, Smith D J 2009 Proceedings of the International Society for Optical Engineering San Jose, USA, January 26—29, 2009 p14
[5] Kumar S P, Agrawal A, Kabra S, Gupta M, Gupta R S 2006 Microelectronics Journal 37 1339
[6] Farahmand M, Garetto C, Bellotti E, Brennan K F, Goano M, Ghillino E, Ghione G, Albrecht J D and Ruden P P 2001 IEEE Transactions on Electron Devices 48 535
[7] Parvesh G, Sujata P, Subhasis H, Mridula G, Gupta R S 2007 Microelectron. J. 38 848
[8] Liu J, Hao Y, Feng Q, Wang C, Zhang J C, Guo L L 2007 Acta Phys. Sin. 56 3483 (in Chinese) [刘 杰、郝 跃、冯 倩、王 冲、张进城、郭亮良 2008 物理学报 56 3483]
[9] Zhang J F, Wang C, Zhang J C, Hao Y 2006 Chin. Phys. 15 1060
[10] Zhang J F, Zhang J C, Hao Y 2004 Chin. Phys. 13 1334
[11] Wang X H, Zhao M, Liu X Y, Pu Y, Zheng Y K, Wei K 2010 Chin. Phys. B 19 097302
[12] Delagebeaudeuf D, Linh N T 1982 IEEE Transactions on Electron Devices 29 955
[13] Aziz M A, El-Banna M 1996 Thirteenth National Radio Science Conference Cairo, Egypt, March 19—21,1996 p547
[14] Frank S, Sankar D S 1984 Phys. Rev. B 30 840
[15] Norris G B, Look D C, Kopp W, Klem J, Morkoc H 1985 Appl. Phys. Lett. 47 423
[16] Kwangman P, Hong Bae K, Kae Dal K 1987 IEEE Transactions on Electron Devices 34 2422
[17] Cazaux J L, Ng G I, Pavlidis D, Chau H F 1988 IEEE Transactions on Electron Devices 35 1223
[18] Ando Y, Itoh T 1988 IEEE Transactions on Electron Devices 35 2295
[19] Shey A J, Ku W H 1988 IEEE Electron Device Letters 9 624
[20] Kokorev M F, Maleev N A 1996 Solid-State Electronics 39 297
[21] Liu W L, Chen Y L, Balandin A A, Wang K L 2006 Journal of Nanoelectronics and Optoelectronics 1 258
[22] Moloney M J, Ponse F, Morkoc H 1985 IEEE Transactions on Electron Devices 32 1675
[23] Karmalkar S 1997 IEEE Transactions on Electron Devices 44 862
[24] Ketterson A A, Morkoc H 1986 IEEE Transactions on Electron Devices 33 1626
[25] Anwar A F M, Liu K W 1993 IEEE Transactions on Electron Devices 40 1174
[26] Ando Y, Itoh T 1990 IEEE Transactions on Electron Devices 37 67
[27] Tong K Y 1991 Electronics Letters 27 668
[28] Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T, Sullivan G J, Redwing J M 2000 Journal of Applied Physics 87 8070
[29] Khondker A N, Anwar A F M, Islam M A, Limoncelli L, Wilson D 1986 IEEE Transactions on Electron Devices 33 1825
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