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The quantum yield formulas for exponential-doping and uniform-doping transmission-mode GaAs photocathodes are modified by adding a shortwave constraint factor to the photoelectron generation function in a one-dimensional continuity equation. Based on the modified transmission-mode quantum yield formulas, the experimental exponential-doping and uniform-doping transmission-mode quantum yield curves are respectively fitted, and the fitted curves are consistent well with the experimental curves. In addition, the fitted cathode performance parameters indicate that as compared with the uniform-doping photocathode, the exponential-doping photocathode can obtain a higher cathode performance because of the built-in electric field. The exponential-doping structure can effectively increase the quantum yield of transmission-mode photocathode.
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Keywords:
- transmission-mode photocathode /
- exponential-doping /
- quantum yield /
- built-in electric field
[1] Li Q, Hao L, Pang W N 2008 Acta Phys. Sin. 57 172 (in Chinese)[李 倩、郝 亮、庞文宁 2008 物理学报 57 172]
[2] Liu Z, Sun Y, Peterson S, Pianetta P 2008 Appl. Phys. Lett. 92 241107
[3] Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541
[4] Yang Z, Zou J J, Chang B K 2010 Acta Phys. Sin. 59 4290 (in Chinese)[杨 智、邹继军、常本康 2010 物理学报 59 4290]
[5] Farsako Dgˇ lu F, Zengin D M, Kocaba H 1993 Opt. Eng. 32 1105
[6] Narayanan A A, Fisher D G, Erickson L P, O’Clock G D 1984 J. Appl. Phys. 56 1886
[7] Bourree L E, Chasse D R, Stephan Thamban P L, Glosser R 2003 Proc. SPIE 4796 11
[8] Moré S, Tanaka S, Tanaka S, Fujii Y, Kamada M 2003 Surf. Sci. 527 41
[9] Spicer W E, Herrera-Gómez A 1993 Proc. SPIE 2022 18
[10] Zou J J, Chang B K 2006 Opt. Eng. 45 054001
[11] Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) [邹继军、常本康、杨 智 2007 物理学报 56 2992]
[12] Du X Q, Chang B K 2009 Acta Phys. Sin. 58 8643 (in Chinese) [杜晓晴、常本康 2009 物理学报 58 8643]
[13] Niu J, Zhang Y J, Chang B K, Yang Z, Xiong Y J 2009 Appl. Opt. 48 5445
[14] Zou J J, Chang B K, Chen H L, Liu L 2007 J. Appl. Phys. 101 033126
[15] Olsen G H, Szostak D J, Zamerowski T J, Ettenberg M 1977 J. Appl. Phys. 48 1007
[16] Liu Y Z, Moll J L, Spicer W E 1970 Appl. Phys. Lett. 17 60
[17] Gutierrez W A, Pommerrenig H D 1973 Appl. Phys. Lett. 22 292
[18] Liu L, Chang B K, Du Y J, Qian Y S, Gao P 2005 Appl. Surf. Sci. 251 273
[19] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p175 (in Chinese) [刘恩科、朱秉升、罗晋生 2003 半导体物理学 (北京: 电子工业出版社) 第175页]
[20] Vergara G, Gómez L J, Capmany J, Montojo M T 1997 Vacuum 48 155
[21] Antypas G A, Escher J S, Edgecumbe J, Enck R S Jr 1978 J. Appl. Phys. 49 4301
[22] Stocker B J 1975 Surf. Sci. 47 501
[23] Su C Y, Spicer W E, Lindau I 1983 J. Appl. Phys. 54 1413
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[1] Li Q, Hao L, Pang W N 2008 Acta Phys. Sin. 57 172 (in Chinese)[李 倩、郝 亮、庞文宁 2008 物理学报 57 172]
[2] Liu Z, Sun Y, Peterson S, Pianetta P 2008 Appl. Phys. Lett. 92 241107
[3] Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541
[4] Yang Z, Zou J J, Chang B K 2010 Acta Phys. Sin. 59 4290 (in Chinese)[杨 智、邹继军、常本康 2010 物理学报 59 4290]
[5] Farsako Dgˇ lu F, Zengin D M, Kocaba H 1993 Opt. Eng. 32 1105
[6] Narayanan A A, Fisher D G, Erickson L P, O’Clock G D 1984 J. Appl. Phys. 56 1886
[7] Bourree L E, Chasse D R, Stephan Thamban P L, Glosser R 2003 Proc. SPIE 4796 11
[8] Moré S, Tanaka S, Tanaka S, Fujii Y, Kamada M 2003 Surf. Sci. 527 41
[9] Spicer W E, Herrera-Gómez A 1993 Proc. SPIE 2022 18
[10] Zou J J, Chang B K 2006 Opt. Eng. 45 054001
[11] Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) [邹继军、常本康、杨 智 2007 物理学报 56 2992]
[12] Du X Q, Chang B K 2009 Acta Phys. Sin. 58 8643 (in Chinese) [杜晓晴、常本康 2009 物理学报 58 8643]
[13] Niu J, Zhang Y J, Chang B K, Yang Z, Xiong Y J 2009 Appl. Opt. 48 5445
[14] Zou J J, Chang B K, Chen H L, Liu L 2007 J. Appl. Phys. 101 033126
[15] Olsen G H, Szostak D J, Zamerowski T J, Ettenberg M 1977 J. Appl. Phys. 48 1007
[16] Liu Y Z, Moll J L, Spicer W E 1970 Appl. Phys. Lett. 17 60
[17] Gutierrez W A, Pommerrenig H D 1973 Appl. Phys. Lett. 22 292
[18] Liu L, Chang B K, Du Y J, Qian Y S, Gao P 2005 Appl. Surf. Sci. 251 273
[19] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p175 (in Chinese) [刘恩科、朱秉升、罗晋生 2003 半导体物理学 (北京: 电子工业出版社) 第175页]
[20] Vergara G, Gómez L J, Capmany J, Montojo M T 1997 Vacuum 48 155
[21] Antypas G A, Escher J S, Edgecumbe J, Enck R S Jr 1978 J. Appl. Phys. 49 4301
[22] Stocker B J 1975 Surf. Sci. 47 501
[23] Su C Y, Spicer W E, Lindau I 1983 J. Appl. Phys. 54 1413
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