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Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET

Wang Guan-Yu Zhang He-Ming Wang Xiao-Yan Wu Tie-Feng Wang Bin

Citation:

Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET

Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin
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  • Abstract views:  7038
  • PDF Downloads:  693
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Publishing process
  • Received Date:  29 June 2010
  • Accepted Date:  19 October 2010
  • Published Online:  15 July 2011

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