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Properties of MgB2 ultra-thin films grown by hybrid physical-chemical vapor deposition

Sun Xuan Huang Xu Wang Ya-Zhou Feng Qing-Rong

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Properties of MgB2 ultra-thin films grown by hybrid physical-chemical vapor deposition

Sun Xuan, Huang Xu, Wang Ya-Zhou, Feng Qing-Rong
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  • We fabricate MgB2 ultra-thin films via hybrid physical-chemical vapor deposition technique. Under the same background pressure, the same H2 flow rate, by changing B2H6 flow rate and deposition time, we fabricate a series of ultra-thin films with thickness ranging from 5 nm to 80 nm. These films grow on SiC substrate, and are all c-axis epitaxial. We study the Volmer-Weber mode in the film formation. As the thickness increases, critical transition temperature Tc(0) also increases and the residual resistivity decreases. Especially, a very high Tc(0) 32.8 K for the 7.5 nm film, and Tc(0) 36.5 K, low residual resistivity (42 K) 17.7 cm, and extremely high critical current density Jc (0 T,4 K) 107 A/cm2, upper critical field Hc2(0) for 10 nm film are achieved. Moreover, by optimizing the H2 flow rate, we obtain relatively smooth surface of the 10 nm epitaxial film, with a root-mean-square roughness of 0.731 nm, which makes them well qualified for device applications.
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    [2]

    Larbalestier D C, Cooley L D, Rikel M O, Polyanskii A A, Jiang J, Patnaik S, Cai X Y, Feldmann D M, Gurevich A, Squitieri A A, Naus M T, Eom C B, Hellstrom E E, Cava R J, Regan K A, Rogado N, Hayward M A, He T, Slusky J S, Khalifah P, Inumaru K, Haas M 2001 Nature 410 186

    [3]

    Scanlan R M, Malozemoff A P, Larbalestier D C 2004 Proc. IEEE 92 1639

    [4]

    ter Brake H J M, Buchholz F I, Burnell G, Claeson T, Crété D, Febvre P, Gerritsma G J, Hilgenkamp H, Humphreys R, Ivanov Z, Jutzi W, Khabipov M I, Mannhart J, Meye H G, Niemeyer J, Ravex A, Rogalla H, Russo M, Satchell J, Siegel M, Töpfer H, Uhlmann F H, Villégier J C, Wikborg E, Winkler D, Zorin A B 2006 Physica C 439 1

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    Shimakage H, Tatsumi M, Wang Z 2008 Supercond. Sci. Technol. 21 095009

    [6]

    Zeng X H, Alexe J V, Pogrebnyakov A V, Kotcharov A E, Jones J, Xi X X, Lysczek E M, Redwing J M, Xu S Y, Li Q, Lettieri J, Schlom D G, Tian W, Pan X Q, Liu Z K 2002 Nat. Mater. 1 35

    [7]

    Xi X X, Pogrebnyakov A V, Xu S Y, Chen K, Cui Y, Maertz E C, Zhuang C G, Li Q, Lamborn D R, Redwing J M, Liu Z K, Soukiassian A, Schlom D G, Weng X J, Dickey E C, Chen Y B, Tian W, Pan X Q, Cybart S A, Dynes R C 2007 Physica C 456 22

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    Zhuang C G, Tan T, Wang Y Z, Bai S S, Ma X B, Yang H, Zhang G H, He Y S, Wen H H, Xi X X, Feng Q R, Gan Z Z 2009 Supercond. Sci. Technol. 22 025002

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    Espiau de Lamastre R, Odier P, Villégiera J C 2007 Appl. Phys. Lett. 91 232501

    [10]

    Bouchiat V, Faucher M, Thirion C, Wernsdorfer W, Fournier T, Pannetier B 2001 Appl. Phys. Lett. 79 123

    [11]

    Zhuang C G 2008 Ph.D. Dissertation (Beijing:Peking University) p77 (in Chinese) [庄承钢 2008 博士学位论文(北京:北京大学) 第77页]

    [12]

    Pogrebnyakov A V, Tenne D A, Soukiassian A, Xi X X, Redwing J M, Vaithyanathan V, Schlom D G, Xu S Y, Li Q, Johannes M D, Kasinathan D, Pickett W E 2004 Phys. Rev. Lett. 93 147006

    [13]

    Zheng W T 2004 Thin Films Materials and Thin Films Techniques (Beijing: Chemical Industry Press) p166 (in Chinese) [郑伟涛 2004 薄膜材料与薄膜技术 (北京:化学工业出版社) 第166页]

    [14]

    Szalowski K 2006 Phys. Rev. B 74 094501

    [15]

    Ader J P, Buzdin A I 2006 Phys. Lett. A 351 343

    [16]

    Pogrebnyakov A V, Redwing J M, Jones J E, Xi X X, Xu S Y, Li Q 2003 Appl. Phys. Lett. 82 16

    [17]

    Levchenko I, Baranov O 2003 Vacuum 72 205

    [18]

    Reso D, Silinskas M, Lisker M, Gewalt A, Burte E P 2011 Thin Solid Films 519 2150

    [19]

    Yu W, Du J, Zhang L, Cui S K, Lu W B, Fu G S 2008 J. Inorg. Mater. 23 540 (in Chinese) [于 威、杜 杰、张 丽、崔双魁、路万兵、傅广生 2008 无机材料学报 23 540]

    [20]

    Yu W, Cui S K, Lu W B, Wang C S, Fu G S 2006 Chin. J. Semicond. 27 1767 (in Chinese) [于 威、崔双魁、路万兵、王春生、傅广生 2006 半导体学报 27 1767]

    [21]

    Chen J Z, Liu J H 2009 Introduction to Nanomaterials Science (Beijing: Higher Education Press) pp4—21 (in Chinese) [陈敬中、刘剑洪 2009纳米材料科学导论(北京:高等教育出版社) 第4—21页]

    [22]

    Blank D H A, Booij W, Hilgenkamp H, Vulink B, Veldhuis D, Rogalla H 1995 IEEE Trans. Appl. Supercond. 5 2786

    [23]

    Meng X F, Amous R S, Pierce F S, Wang K M, Xu C H, Deaver B S Jr, Poon S J 1991 IEEE Trans. Magn. 27 3305

    [24]

    Zeng X H, Pogrebnyakov A V, Zhu M H, Jones J E, Xi X X, Xu S Y, Wertz E, Li Q, Redwing J M, Lettieri J, Vaithyanathan V, Schlom D G, Liu Z K, Trithaveesak O, Schubert J 2003 Appl. Phys. Lett. 82 2097

    [25]

    Zhuang C G, Meng S, Zhang C Y, Feng Q R, Gan Z Z, Yang H, Jing Y, Wen H H, Xi X X 2008 J. Appl. Phys. 104 013924

    [26]

    Zhang Y H 2009 Superconductivity Physics (3rd ed)(Hefei: University of Science and Technology of China Press) p236 (in Chinese) [张裕恒 2009 超导物理 (第3版) (合肥:中国科学技术大学出版社) 第236页 ]

    [27]

    Gao J L, Zhou J Z, Zhang L 2008 Physics 37 493 (in Chinese) [高建龙、周建中、张 莉 2008 物理 37 493]

    [28]

    Xu S Y, Li Q, Wertz E, Hu Y F, Pogrebnyakov A V, Zeng X H, Xi X X, Redwing J M 2003 Phys. Rev. B 68 224501

    [29]

    Wu Y S, Zhao Y, Wexler D, Kim J H, Dou S X 2008 Physica C 468 218

    [30]

    Lee S, Chen K, Baek S H, Dai W Q, Moeckly B H, Li Q, Xi X X, Rzchowski M S, Eom C B 2009 IEEE Trans. Appl. Supercond. 19 2811

    [31]

    Yamamoto H, Tsukamoto A, Hasegawa H, Saitoh K, Okada M, Kitaguchi H 2005 Physica C 426—431 1444

    [32]

    Zhu H M, Zhang Y B, Sun X L, Xiong W J, Zhou S P 2007 Physica C 452 11

    [33]

    Gubin A I, Il’in K S, Vitusevich S A, Siegel M, Klein N 2005 Phys. Rev. B 72 064503

    [34]

    Suh J D, Sung G Y 1995 Physica C 252 54

  • [1]

    Nagamatsu J, Nakagawa N, Muranaka T,Zenitani Y,Akimitsu J 2001 Nature 410 63

    [2]

    Larbalestier D C, Cooley L D, Rikel M O, Polyanskii A A, Jiang J, Patnaik S, Cai X Y, Feldmann D M, Gurevich A, Squitieri A A, Naus M T, Eom C B, Hellstrom E E, Cava R J, Regan K A, Rogado N, Hayward M A, He T, Slusky J S, Khalifah P, Inumaru K, Haas M 2001 Nature 410 186

    [3]

    Scanlan R M, Malozemoff A P, Larbalestier D C 2004 Proc. IEEE 92 1639

    [4]

    ter Brake H J M, Buchholz F I, Burnell G, Claeson T, Crété D, Febvre P, Gerritsma G J, Hilgenkamp H, Humphreys R, Ivanov Z, Jutzi W, Khabipov M I, Mannhart J, Meye H G, Niemeyer J, Ravex A, Rogalla H, Russo M, Satchell J, Siegel M, Töpfer H, Uhlmann F H, Villégier J C, Wikborg E, Winkler D, Zorin A B 2006 Physica C 439 1

    [5]

    Shimakage H, Tatsumi M, Wang Z 2008 Supercond. Sci. Technol. 21 095009

    [6]

    Zeng X H, Alexe J V, Pogrebnyakov A V, Kotcharov A E, Jones J, Xi X X, Lysczek E M, Redwing J M, Xu S Y, Li Q, Lettieri J, Schlom D G, Tian W, Pan X Q, Liu Z K 2002 Nat. Mater. 1 35

    [7]

    Xi X X, Pogrebnyakov A V, Xu S Y, Chen K, Cui Y, Maertz E C, Zhuang C G, Li Q, Lamborn D R, Redwing J M, Liu Z K, Soukiassian A, Schlom D G, Weng X J, Dickey E C, Chen Y B, Tian W, Pan X Q, Cybart S A, Dynes R C 2007 Physica C 456 22

    [8]

    Zhuang C G, Tan T, Wang Y Z, Bai S S, Ma X B, Yang H, Zhang G H, He Y S, Wen H H, Xi X X, Feng Q R, Gan Z Z 2009 Supercond. Sci. Technol. 22 025002

    [9]

    Espiau de Lamastre R, Odier P, Villégiera J C 2007 Appl. Phys. Lett. 91 232501

    [10]

    Bouchiat V, Faucher M, Thirion C, Wernsdorfer W, Fournier T, Pannetier B 2001 Appl. Phys. Lett. 79 123

    [11]

    Zhuang C G 2008 Ph.D. Dissertation (Beijing:Peking University) p77 (in Chinese) [庄承钢 2008 博士学位论文(北京:北京大学) 第77页]

    [12]

    Pogrebnyakov A V, Tenne D A, Soukiassian A, Xi X X, Redwing J M, Vaithyanathan V, Schlom D G, Xu S Y, Li Q, Johannes M D, Kasinathan D, Pickett W E 2004 Phys. Rev. Lett. 93 147006

    [13]

    Zheng W T 2004 Thin Films Materials and Thin Films Techniques (Beijing: Chemical Industry Press) p166 (in Chinese) [郑伟涛 2004 薄膜材料与薄膜技术 (北京:化学工业出版社) 第166页]

    [14]

    Szalowski K 2006 Phys. Rev. B 74 094501

    [15]

    Ader J P, Buzdin A I 2006 Phys. Lett. A 351 343

    [16]

    Pogrebnyakov A V, Redwing J M, Jones J E, Xi X X, Xu S Y, Li Q 2003 Appl. Phys. Lett. 82 16

    [17]

    Levchenko I, Baranov O 2003 Vacuum 72 205

    [18]

    Reso D, Silinskas M, Lisker M, Gewalt A, Burte E P 2011 Thin Solid Films 519 2150

    [19]

    Yu W, Du J, Zhang L, Cui S K, Lu W B, Fu G S 2008 J. Inorg. Mater. 23 540 (in Chinese) [于 威、杜 杰、张 丽、崔双魁、路万兵、傅广生 2008 无机材料学报 23 540]

    [20]

    Yu W, Cui S K, Lu W B, Wang C S, Fu G S 2006 Chin. J. Semicond. 27 1767 (in Chinese) [于 威、崔双魁、路万兵、王春生、傅广生 2006 半导体学报 27 1767]

    [21]

    Chen J Z, Liu J H 2009 Introduction to Nanomaterials Science (Beijing: Higher Education Press) pp4—21 (in Chinese) [陈敬中、刘剑洪 2009纳米材料科学导论(北京:高等教育出版社) 第4—21页]

    [22]

    Blank D H A, Booij W, Hilgenkamp H, Vulink B, Veldhuis D, Rogalla H 1995 IEEE Trans. Appl. Supercond. 5 2786

    [23]

    Meng X F, Amous R S, Pierce F S, Wang K M, Xu C H, Deaver B S Jr, Poon S J 1991 IEEE Trans. Magn. 27 3305

    [24]

    Zeng X H, Pogrebnyakov A V, Zhu M H, Jones J E, Xi X X, Xu S Y, Wertz E, Li Q, Redwing J M, Lettieri J, Vaithyanathan V, Schlom D G, Liu Z K, Trithaveesak O, Schubert J 2003 Appl. Phys. Lett. 82 2097

    [25]

    Zhuang C G, Meng S, Zhang C Y, Feng Q R, Gan Z Z, Yang H, Jing Y, Wen H H, Xi X X 2008 J. Appl. Phys. 104 013924

    [26]

    Zhang Y H 2009 Superconductivity Physics (3rd ed)(Hefei: University of Science and Technology of China Press) p236 (in Chinese) [张裕恒 2009 超导物理 (第3版) (合肥:中国科学技术大学出版社) 第236页 ]

    [27]

    Gao J L, Zhou J Z, Zhang L 2008 Physics 37 493 (in Chinese) [高建龙、周建中、张 莉 2008 物理 37 493]

    [28]

    Xu S Y, Li Q, Wertz E, Hu Y F, Pogrebnyakov A V, Zeng X H, Xi X X, Redwing J M 2003 Phys. Rev. B 68 224501

    [29]

    Wu Y S, Zhao Y, Wexler D, Kim J H, Dou S X 2008 Physica C 468 218

    [30]

    Lee S, Chen K, Baek S H, Dai W Q, Moeckly B H, Li Q, Xi X X, Rzchowski M S, Eom C B 2009 IEEE Trans. Appl. Supercond. 19 2811

    [31]

    Yamamoto H, Tsukamoto A, Hasegawa H, Saitoh K, Okada M, Kitaguchi H 2005 Physica C 426—431 1444

    [32]

    Zhu H M, Zhang Y B, Sun X L, Xiong W J, Zhou S P 2007 Physica C 452 11

    [33]

    Gubin A I, Il’in K S, Vitusevich S A, Siegel M, Klein N 2005 Phys. Rev. B 72 064503

    [34]

    Suh J D, Sung G Y 1995 Physica C 252 54

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Publishing process
  • Received Date:  10 December 2009
  • Accepted Date:  20 January 2011
  • Published Online:  05 April 2011

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