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Bipolar n-p-n transistor geometrical parameters are optimized based on the principle of minimizing the perimeter-to-area ratio (P/A). Three types of radiation-resistant n-p-n transistors are developed and fabricated in the 20 V bipolar process. The first is emitter-base junction hardened n-p-n transistor. The second has heavily boron doped base ring. And the last uses both radiation-resistant measurements. The experimental results indicate that after irradiated by the radiation of total dose of 1 kGy, in current gain, the common n-p-n(unhardened) transistor reduces about 60%65%, while the first two hardened n-p-n transistors increases 10%15%: the last hardened n-p-n transistors are 15%20% greater than the common n-p-n transistors in current gain.
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Keywords:
- bipolar n-p-n transistor /
- radiation effect /
- current gain /
- radiation-resistant
[1] Chen X B, Zhang Q Z 2007 Theory and Design of Transistor(Beijing: Publishing House of Electronics Industry)p276 (in Chinese)[陈星弼、张庆忠 2007 晶体管原理与设计(北京:电子工业出版社) 第276页]
[2] Nowlin R N, Enlow E W, Schrimpf R D, Combs W E 1992 IEEE Trans. Nucl. Sci. 39 2029
[3] [4] Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A J, Delaus M, Winokur P S, Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871
[5] [6] [7] Pease R L, Schrimpf R D, Fleetwood D M 2009 IEEE Trans. Nucl. Sci. 56 1894
[8] [9] Wei A, Kosier S L, Schrimpf R D, Fleetwood D M, Combs W E 1994 Appl. Phys. Lett. 65 1918
[10] [11] Chen X J, Barnaby H J, Schrimpf R D, Platteter D G, Dunham G 2006 IEEE Trans. Nucl. Sci. 53 3649
[12] Enlow E W, Pease R L, Combs W E, Schrimpf R D, Nowlin R N 1991 IEEE Trans. Nucl. Sci. 38 1342
[13] [14] [15] Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin. Phys. B 19 066103
[16] [17] Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nuc. Sci. 49 2650
[18] Zhang H L, Lu W, Ren D Y, Guo Q, Yu X F, He C F, Ai E K, Cui S 2004 Chin. J. Semicond. 25 1675 (in Chinese) [张华林、陆 妩、任迪远、郭 旗、余学峰、何承发、艾尔肯、崔 帅 2004 半导体学报 25 1675]
[19] [20] Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 2435 (in Chinese) [张廷庆、刘传洋、刘家璐、王剑屏、黄 智、徐娜军、何宝平、彭宏论、姚育娟 2001 物理学报 50 2435]
[21] [22] Hjalmarson H P, Pease R L, Witczak S C, Shaneyfelt M R, Schwank J R, Edwards A H, Hembree C E, Mattsson T R 2003 IEEE Trans. Nucl. Sci. 50 1901
[23] [24] [25] Johnston A H, Swift G M, Rax B G 1996 IEEE Trans. Nucl. Sci. 43 3049
[26] Kosier S L, Schrimpf R D, Nowlin R N, Fleetwood D M, DeLaus M, Pease R L, Combs W E, Wei A, Chai F 1993 IEEE Trans. Electron Dev. 40 1276
[27] [28] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展、陆妩、任迪远、王义元、郭 旗、余学锋、何承发 2009 物理学报 58 5572]
[29] [30] Nowlin R N, Fleetwood D M, Schrimpf R D, Pease R L, Combs W E 1993 IEEE Trans. Nucl. Sci. 40 1686
[31] [32] [33] Wang J P, Xu N J, Zhang T Q, Tang H L, Liu J L, Liu C Y, Yao Y J, Peng H L, He B P, Zhang Z X 2000 Acta Phys. Sin. 49 1331 (in Chinese)[王剑屏、徐娜军、张廷庆、汤华莲、刘家璐、刘传洋、姚育娟、彭宏论、何宝平、张正选 2000 物理学报 49 1331]
[34] Nicolaas W V, Dustin W 2005 US Patent 0287754A1
[35] [36] Schrimpf R D 1996 IEEE Trans. Nucl. Sci. 43 787
[37] [38] Zhang Z S, Liu Z L, Zhang G Q, Li N, Fan K, Zhang E X, Yi W B, Chen M, Wang X 2005 Chin. Phys. B 14 569
[39] [40] [41] Kosier S L, Schrimpft R D, Fleetwood D M, DeLaus M D, Pease R L, Combs W E 1995 IEEE Trans. Electron Dev. 42 436
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[1] Chen X B, Zhang Q Z 2007 Theory and Design of Transistor(Beijing: Publishing House of Electronics Industry)p276 (in Chinese)[陈星弼、张庆忠 2007 晶体管原理与设计(北京:电子工业出版社) 第276页]
[2] Nowlin R N, Enlow E W, Schrimpf R D, Combs W E 1992 IEEE Trans. Nucl. Sci. 39 2029
[3] [4] Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A J, Delaus M, Winokur P S, Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871
[5] [6] [7] Pease R L, Schrimpf R D, Fleetwood D M 2009 IEEE Trans. Nucl. Sci. 56 1894
[8] [9] Wei A, Kosier S L, Schrimpf R D, Fleetwood D M, Combs W E 1994 Appl. Phys. Lett. 65 1918
[10] [11] Chen X J, Barnaby H J, Schrimpf R D, Platteter D G, Dunham G 2006 IEEE Trans. Nucl. Sci. 53 3649
[12] Enlow E W, Pease R L, Combs W E, Schrimpf R D, Nowlin R N 1991 IEEE Trans. Nucl. Sci. 38 1342
[13] [14] [15] Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin. Phys. B 19 066103
[16] [17] Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nuc. Sci. 49 2650
[18] Zhang H L, Lu W, Ren D Y, Guo Q, Yu X F, He C F, Ai E K, Cui S 2004 Chin. J. Semicond. 25 1675 (in Chinese) [张华林、陆 妩、任迪远、郭 旗、余学峰、何承发、艾尔肯、崔 帅 2004 半导体学报 25 1675]
[19] [20] Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 2435 (in Chinese) [张廷庆、刘传洋、刘家璐、王剑屏、黄 智、徐娜军、何宝平、彭宏论、姚育娟 2001 物理学报 50 2435]
[21] [22] Hjalmarson H P, Pease R L, Witczak S C, Shaneyfelt M R, Schwank J R, Edwards A H, Hembree C E, Mattsson T R 2003 IEEE Trans. Nucl. Sci. 50 1901
[23] [24] [25] Johnston A H, Swift G M, Rax B G 1996 IEEE Trans. Nucl. Sci. 43 3049
[26] Kosier S L, Schrimpf R D, Nowlin R N, Fleetwood D M, DeLaus M, Pease R L, Combs W E, Wei A, Chai F 1993 IEEE Trans. Electron Dev. 40 1276
[27] [28] Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F, He C F 2009 Acta Phys. Sin. 58 5572 (in Chinese) [郑玉展、陆妩、任迪远、王义元、郭 旗、余学锋、何承发 2009 物理学报 58 5572]
[29] [30] Nowlin R N, Fleetwood D M, Schrimpf R D, Pease R L, Combs W E 1993 IEEE Trans. Nucl. Sci. 40 1686
[31] [32] [33] Wang J P, Xu N J, Zhang T Q, Tang H L, Liu J L, Liu C Y, Yao Y J, Peng H L, He B P, Zhang Z X 2000 Acta Phys. Sin. 49 1331 (in Chinese)[王剑屏、徐娜军、张廷庆、汤华莲、刘家璐、刘传洋、姚育娟、彭宏论、何宝平、张正选 2000 物理学报 49 1331]
[34] Nicolaas W V, Dustin W 2005 US Patent 0287754A1
[35] [36] Schrimpf R D 1996 IEEE Trans. Nucl. Sci. 43 787
[37] [38] Zhang Z S, Liu Z L, Zhang G Q, Li N, Fan K, Zhang E X, Yi W B, Chen M, Wang X 2005 Chin. Phys. B 14 569
[39] [40] [41] Kosier S L, Schrimpft R D, Fleetwood D M, DeLaus M D, Pease R L, Combs W E 1995 IEEE Trans. Electron Dev. 42 436
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