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Aluminum-doped zinc oxide (AZO) films have potential applications in photoconducting and piezo-electric devices, and gas and piezo sensors. Although the film structure and optical properties are intensively studied, the effect of gas flow ratio of O2 to Ar (GFR) on the film structure and optical properties has not been reported in terms of macrostress and lattice strain. In this paper, a series of AZO films is deposited on glass substrates by direct-current pulse magnetron reactive sputtering under different GFRs. The influence of the GFR on the crystalline structure, the surface topography, and the optical properties of the film is systematically studied in terms of macrostress and lattice strain by using X-ray diffractometry, scanning electron microscopy and spectrophotometry, respectively. The as-deposited AZO films are polycrystalline and (103) oriented, which can be attributed to the change in crystalline face energy during the accompanied thermal annealing for 3 h. The film tensile stress first increases to a maximum value, and then decreases gradually with GFR values increasing. It is noted that the transition from tensile to compressive stress occurs with GFR increasing. This result is different form that of lattice strain. The film transmissivity in the visible region first decreases and then increases with GFR increasing, which is attributed mainly to the scattering of grain boundary induced by the grain size.
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Keywords:
- AZO film /
- direct-current pulse magnetron reactive sputtering /
- optical properties /
- gas flow ratio of oxygen to argon
[1] Robert F 1997 Science 276 890
[2] Song D, Aberle A G, Xia J 2002 Appl. Surf. Sci. 195 291
[3] Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigh J A, Gnade B E 1996 J. Appl. Phys. 79 7983
[4] Chopra K L, Major S, Pandya D K 1983 Thin Solid Films 102 1
[5] Granqvist C G 1990 Thin Solid Films 730 193
[6] Kluth O, Schöpe G, Hüpkes J, Agashe C, Müller J, Rech B 2003Thin Solid Films 442 80
[7] Zhang D H, Brod D E 1995 Acta Phys. Sin. 44 1321 (in Chinese) [张德恒, Brod D E 1995 物理学报 44 1321]
[8] Kim K H, Park K C, Ma D Y 1997 J. Appl. Phys. 81 7764
[9] Major C, Nemeth A, Radnoczi G, Czigany Z, Fried M, Labadi Z, Barsony I 2009 Appl. Surf. Sci. 255 8907
[10] Hong R J, Jiang X 2006 Appl. Phys. A 84 161
[11] Deng Z H, Huang C G, Huang J Q, Wang M L, He H, Wang H, Cao Y G 2010 J. Mater. Sci.- Mater. Electron. 21 1030
[12] Gao X Y, Lin Q G, Feng H L, Liu Y F, Lu J X 2009 Thin SolidFilms 517 4684
[13] Sahu D R, Lin S Y, Huang J L 2007 Appl. Surf . Sci. 253 4886
[14] Chen M, Bai X D, Huang R F, Wen L S 2000 Chin. J. Semicond.21 394 (in Chinese) [陈猛, 白雪冬, 黄荣芳, 闻立时 2000 半导体学报 21 394]
[15] Kim H, Piqueb A, Horwitzb J S, Murata H, Kafafi Z H, GilmoreC M, Chrisey D B 2000 Thin Solid Films 377-378 798
[16] Segmuller A, Murakami M, Rosenberg R 1988 Analytical Techniquesfor Thin Films (Boston: Academic Press) p143
[17] Cebulla R, Wendi R, Ellmer K 1998 J. Appl. Phys. 83 1087
[18] Mi X C, Chen Y Y, Wu Z J, Liu X H, Yang S Y, Zhang L C 2004PARTA: Physical Testing 40 181 (in Chinese) [宓小川, 陈英颖, 吴则嘉, 刘晓晗, 杨晟远, 张林春 2004 理化检验-物理分册 40 179]
[19] Gao X Y, Liu XW, Feng H L, Lu J X 2010 J. Zhengzhou Univ. (Nat.Sci. Ed.) 42 51(in Chinese) [郜小勇, 刘绪伟, 冯红亮, 卢景霄 2010 郑州大学学报(理学版) 42 51]
[20] Yim K, Kim H, Lee C 2006 J. Electroceram. 17 875
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[1] Robert F 1997 Science 276 890
[2] Song D, Aberle A G, Xia J 2002 Appl. Surf. Sci. 195 291
[3] Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigh J A, Gnade B E 1996 J. Appl. Phys. 79 7983
[4] Chopra K L, Major S, Pandya D K 1983 Thin Solid Films 102 1
[5] Granqvist C G 1990 Thin Solid Films 730 193
[6] Kluth O, Schöpe G, Hüpkes J, Agashe C, Müller J, Rech B 2003Thin Solid Films 442 80
[7] Zhang D H, Brod D E 1995 Acta Phys. Sin. 44 1321 (in Chinese) [张德恒, Brod D E 1995 物理学报 44 1321]
[8] Kim K H, Park K C, Ma D Y 1997 J. Appl. Phys. 81 7764
[9] Major C, Nemeth A, Radnoczi G, Czigany Z, Fried M, Labadi Z, Barsony I 2009 Appl. Surf. Sci. 255 8907
[10] Hong R J, Jiang X 2006 Appl. Phys. A 84 161
[11] Deng Z H, Huang C G, Huang J Q, Wang M L, He H, Wang H, Cao Y G 2010 J. Mater. Sci.- Mater. Electron. 21 1030
[12] Gao X Y, Lin Q G, Feng H L, Liu Y F, Lu J X 2009 Thin SolidFilms 517 4684
[13] Sahu D R, Lin S Y, Huang J L 2007 Appl. Surf . Sci. 253 4886
[14] Chen M, Bai X D, Huang R F, Wen L S 2000 Chin. J. Semicond.21 394 (in Chinese) [陈猛, 白雪冬, 黄荣芳, 闻立时 2000 半导体学报 21 394]
[15] Kim H, Piqueb A, Horwitzb J S, Murata H, Kafafi Z H, GilmoreC M, Chrisey D B 2000 Thin Solid Films 377-378 798
[16] Segmuller A, Murakami M, Rosenberg R 1988 Analytical Techniquesfor Thin Films (Boston: Academic Press) p143
[17] Cebulla R, Wendi R, Ellmer K 1998 J. Appl. Phys. 83 1087
[18] Mi X C, Chen Y Y, Wu Z J, Liu X H, Yang S Y, Zhang L C 2004PARTA: Physical Testing 40 181 (in Chinese) [宓小川, 陈英颖, 吴则嘉, 刘晓晗, 杨晟远, 张林春 2004 理化检验-物理分册 40 179]
[19] Gao X Y, Liu XW, Feng H L, Lu J X 2010 J. Zhengzhou Univ. (Nat.Sci. Ed.) 42 51(in Chinese) [郜小勇, 刘绪伟, 冯红亮, 卢景霄 2010 郑州大学学报(理学版) 42 51]
[20] Yim K, Kim H, Lee C 2006 J. Electroceram. 17 875
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