Real time and ex situ spectroscopic ellipsometry analysis microcrystalline silicon thin films growth

Li Xin-Li; Gu Jin-Hua; Gao Hai-Bo; Chen Yong-Sheng; Gao Xiao-Yong; Yang Shi-E; Lu Jing-Xiao; Li Rui; Jiao Yue-Chao

doi:10.7498/aps.61.036802

Abstract

Microcrystalline silicon thin films with and without a seed layer were deposited using very high frequency plasma enhanced chemical vapor deposition method at a high growth rate. The influence of the seed-layer method on the film growth and structure were investigated using spectroscopic ellipsometry(SE), Raman spectrum and X-ray diffraction. The results show that the seed-layer can not only increase the growth rate, but also promote crystalline nucleation at the initial growth stage. The deposition processes were monitored by real time spectroscopic ellipsometry(RTSE). The film was also measured by ex situ SE in the air. The differences between the RTSE and ex situ SE have been studied in testsing the microcrystalline silicon thin films. Results show that for the thin films the total thickness obtained by RTSE is smaller than that by ex situ SE, while for the thick films the measured total thicknesses by two methods are almost the same. However, the surface roughness thickness detected by RTSE is larger than that by ex situ SE. The reason for this is due to oxidation of the thin film exposed to the air which smoothed the film surface.

Keywords:

Authors and contacts

1.
Key Laboratory of Material Physics of Ministry of Education, School of Physical Engineering and Material Physics Laboratory, Zhengzhou University, Zhengzhou 450052, China;
2.
Henan University of Technology, Zhengzhou 450051, China
Funds: Project supported by the National Basic Research Program of China(Grant Nos. 2006CB202601, 2011CB201606) and the National Natural Science Foundation of China(Grant No. 51007082).

References

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[27]	Fang M, Drevillon B 1992 Jap. J. Appl. Phys. 71 5445
[28]	Kang T D, Lee H, Park S J, Jang J, Lee S 2002 J. Appl. Phys. 92 2467
[29]	Jia H J, Shirai H 2006 Thin Solid Films 506-507 27
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Cited By

[1]	Zhu X H, Chen G H, Liu G H, Ding Y, He B, Zhang W L, Ma Z J, Gao Z H, Li Z H 2006 Journal of Synthetic Crystals 35 1203(in Chinese)[朱秀红, 陈光华, 刘国汉, 丁毅, 何斌, 张文理, 马占洁, 郜志华, 李志华 2006 人工晶体学报 35 1203]
[2]	Yuan Y J, Hou G F, Zhang J M, Xue J J, Cao L R, Zhao Y, Geng X H 2009 Scientia Sinica Technologica 39 1058(in Chinese)[袁育杰, 侯国付, 张建军, 薛俊明, 曹丽冉, 赵颖, 耿新华 2009 中国科学E辑: 技术科学 39 1058]
[3]	Han X Y, Hou G F, Wei C C, Zhang X D, Dai Z H, Li G J, Sun J, Chen X L, Zhang D K, Xue J M, Zhao Y, Geng X H 2009 Acta Phys. Sin. 58 4254(in Chinese)[韩晓艳, 侯国付, 魏长春, 张晓丹, 戴志华, 李贵君, 孙建, 陈新亮, 张德坤, 薛俊明, 赵颖, 耿新华 2009 物理学报 58 4254]
[4]	Zhang X D, Zhang H, Yue Q, Wei C C, Sun J, Hou G F, Xiong S Z, Geng X H, Zhao Y 2010 Phys. Status Solidi C 7 541
[5]	Chen Y S, Xu Y H , Gu J H, Lu J X, Yang S E, Gao X Y 2010 Chin. Phys. B 19 087206
[6]	Chen Y S, Yang S E, Wang J H, Lu J X, Gao X Y, Gu J H 2010 Chin. Phys. B 19 057205
[7]	Chen Y S, Wang J H, Lu J X, Zheng W, Gu J H, Yang S E, Gao X Y, Guo X J, Zhao S L, Gao Z 2008 Chin. Phys. B 17 3464
[8]	Li T W, Liu F C, Zhu M F 2011 Acta Phys. Sin. 60 018103(in Chinese)[李天微, 刘丰珍, 朱美芳 2011 物理学报 60 018103]
[9]	Zhang J T, Li Y, Luo Z Y 2010 Acta Phys. Sin. 59 186(in Chinese)[张继涛, 李岩, 罗志勇 2010 物理学报 59 186]
[10]	Gao X Y, Feng H L, Ma J M, Zhang Z Y 2010 Chin. Phys. B 19 090701
[11]	Kumar S, Pandya D K, Chopra K L 1988 J. Appl. Phys. 63 1497
[12]	Gu J H, Ding Y L, Yang S E, Gao X Y, Chen Y S, Lu J X 2009 Acta Phys. Sin. 58 4123(in Chinese)[谷锦华, 丁艳丽, 杨仕娥, 郜小勇, 陈永生, 卢景霄 2009 物理学报 58 4123]
[13]	Ding Y L, Zhu Z L, Gu J H, Shi X W, Yang S E, Gao X Y, Chen Y S, Lu J X 2010 Acta Phys. Sin. 59 1190(in Chinese)[丁艳丽, 朱志立, 谷锦华, 史新伟, 杨仕娥, 郜小勇, 陈永生, 卢景霄 2010 物理学报 59 1190]
[14]	Collins R W, Ferlauto A S, Ferreira G M, Chen C, Koh J, Koval R J, Lee Y, Pearce J M, Wronski C R 2003 Solar Energy Materials and Solar Cells 78 143
[15]	Collins R W, Koh J, Ferlauto A S, Rovira P I, Lee Y, Koval R J, Wronski C R 2000 Thin Solid Films 364 129
[16]	Liu X M, Li B C, Gao W D, Han Y L 2010 Acta Phys. Sin. 59 1632(in Chinese)[刘显明, 李斌成, 高卫东, 韩艳玲 2010 物理学报 59 1632]
[17]	Li S B, Wu Z M, Yuan K, Liao N M, Li W, Jiang Y D 2008 Acta Phys. Sin. 57 3126(in Chinese)[李世彬, 吴志明, 袁凯, 廖乃镘, 李伟, 蒋亚东 2008 物理学报 57 3126]
[18]	Kang T D, Lee H, Park S J, Jang J, Lee S 2002 J. Appl. Phys. 92 2467
[19]	Li X L, Lu J X, Wang Z Y, Gu J H, Li R, Yang S E 2010 Journal of the Chinese Ceramic Society 38 1905(in Chinese)[李新利, 卢景霄, 王志永, 谷锦华, 李瑞, 杨仕娥 2010 硅酸盐学报 38 1905]
[20]	Hou G F, Xue J M, Guo Q C, Sun J, Zhao Y, Geng X H, Li Y G 2007 Chin. Phys. 16 553
[21]	He Y L, Chen G H, Zhang F Q 1989 Amorphous Semicorductor Physics(Beijing: Higher Education Express)pp312–313(in Chinese)[何宇亮, 陈光华, 张仿清 1989 非晶态半导体物理学北京: 高等教育出版社第312–313页]
[22]	Song J, Guo Y Q, Wang X, Ding H L, Huang R 2010 Acta Phys. Sin. 59 7378(in Chinese)[宋捷, 郭艳青, 王祥, 丁宏林, 黄锐 2010 物理学报 59 7378]
[23]	Chen Y S, Yang S E, Wang J H, Lu J X, Gao X Y, Gu J H, Zheng W, Zhao S L 2008 Chin. Phys. B 17 1394
[24]	Chung Y B, Lee D K, Lim J S, Hwang N M 2011 Solar Energy Materials and Solar Cells 95 211
[25]	Losurdo, Giangregorio M M, Sacchetti A, Capezzuto P, Bruno G, Càrabe J, Gandia J J, Urbina L 2006 Journal of Non-Crystalline Solids 352 906
[26]	Lee H C, Kim H B, Yrom G Y, Park I H, Kim Y W 2008 Surface & Coatings Technology 203 799
[27]	Fang M, Drevillon B 1992 Jap. J. Appl. Phys. 71 5445
[28]	Kang T D, Lee H, Park S J, Jang J, Lee S 2002 J. Appl. Phys. 92 2467
[29]	Jia H J, Shirai H 2006 Thin Solid Films 506-507 27
[30]	Hadjadj A, Pham N, Roca I Cabarrocas P, Jbara O, Djellouli G 2010 J. Appl. Phys. 107 083509
[31]	Kumar S, Drevillon B, Godet C 1986 J. Appl. Phys. 60 1542
[32]	Toyama T, Yoshida W, Sobajima Y, Okamoto H 2008 J. Non- Cryst. Solids 354 2204

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Vol. 61, Issue 3 - 2012-02-05

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