Growth and characterization of graphene on SiO2/Si substrate

Kang Chao-Yang; Tang Jun; Li Li-Min; Yan Wen-Sheng; Xu Peng-Shou; Wei Shi-Qiang

doi:10.7498/aps.61.037302

Abstract

Graphene thin films are grown on Si substrates covered by SiO2 layers (SiO2/Si) with the method of directly depositing carbon atoms in the molecular beam epitaxy (MBE) equipment. The structural properties of the samples produced at different substrate temperatures (500℃, 600℃, 900℃, 1100℃, 1200℃) are investigated by Raman spectroscopy (Raman) and near-edge x-ray absorption fine structure (NEXAFS). The results indicate that the thin films grown at lower temperatures are amorphous carbon thin films. While the thin films grown above 700℃ exhibi the characteristics of graphene. As the substrate temperature increases, the crystalline quality of graphene is improved. However, very high temperature can reduce the quality of grapheme. The best graphene films are obtained at a substrate temperature of 1100℃. When the substrate temperature is low, the activity of the carbon atoms is not enough to form the ordered six member rings of C-sp2. While the substrate temperature is too high, the decomposition of some SiO2 induces the deposited carbon atoms to bond with decomposed oxygen atoms or silicon atoms, resulting in the defects on the surface, which leads to the poor crystalline quality of graphene films.

Keywords:

Authors and contacts

1.
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 50872128).

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Cited By

[1]	Novoselov K S, Geim A K, Firsov A A 2004 Science 306 666
[2]	Xu X G, Zhang C , Xu G J, Cao J C 2011 Chin. Phys. B 20 027201
[3]	Service R F 2009 Science 324 875
[4]	Morzov S V, Novoselov K S, Katsnelson M I, Schedin F, Elias DC, Jaszczak J A, Geim A K 2008 Phys. Rev. Lett. 100 016602
[5]	Balandin A A, Ghosh S, BaoWZ, Calizo I, Teweldebrhan D, MiaoF, Lau C N 2008 Nano Lett. 8 902
[6]	Kang C Y, Tang J, Li L M, Pan H B, Yan W S, Xu P S, Wei S Q, Chen X F, Xu X G 2011 Acta Phys. Sin. 60 047302 (in Chinese)康朝阳, 唐军, 李利民, 潘海斌, 闫文盛, 徐彭寿, 韦世强, 陈秀芳, 徐现刚 2011 物理学报 60 047302]
[7]	Berger C, Song Z, Li T, Li X, Ogbazghi A Y, Feng R, Dai Z, Marchenkov A N, Conrad E H, First P N, de HeerW2004 J. Phys.Chemi. B 108 19912
[8]	Tang C, Ji L, Meng L J, Sun L Z, Zhang K W, Zhong J X 2009Acta Phys. Sin. 58 7816 (in Chinese) [唐超, 吉璐, 孟利军, 孙立忠, 张凯旺, 钟建新 2009 物理学报 58 7816]
[9]	Stankovich S, Dikin D A, Dommett G H B, Kohlhaas K M, ZimneyE J, Stach E A, Piner R D, Nguyen S T, Ruoff R S 2006 Nature442 282
[10]	Di C A, Wei D C, Yu G, Liu Y Q, Guo Y L, Zhu D B 2008 Adv.Mater. 20 3289
[11]	Wu J S, Pisula W, Mullen K 2007 Chem. Rev. 107 718
[12]	Hackley J, Ali D, DiPasquale J, Demaree J D, Richardson C J K2009 Appl. Phys. Lett. 95 133114
[13]	Ouerghi A, Kahouli A, Lucot D, Portail M, Travers L, Gierak J, Penuelas, Jegou P, Shukla A, Chassagne T, ZielinskiM2010 Appl.Phys. Lett. 96 191910
[14]	Suemitsu M, Fukidome H 2010 J. Phys. D: Appl. Phys. 43 374012
[15]	Park J, Mitchel W C, Grazulis L, Smith H E, Eyink K G, BoecklJ J, Tomich D H, Pacley S D, Hoelscher J E 2010 Adv. Mater. 224140
[16]	Tang J, Kang C Y, Li L M, Yan W S, Wei S Q, Xu P S 2011Physica E 43 1415
[17]	Ni Z H, Chen W, Fan X F, Kuo J L, Yu T, Wee A T S, Shen Z X2008 Phys. Rev. B 77 115416
[18]	Röhrl J, Hundhausen M, Emtsev K V, Seyller T, Graupner R, LeyL 2008 Appl. Phys. Lett. 92 01918
[19]	Thomsen C, Reich S 2000 Phys. Rev. Lett. 85 5214
[20]	Chen D W 2010 Acta Phys. Sin. 59 6399 (in Chinese) [陈东猛 2010 物理学报 59 6399]
[21]	Pimenta M A, Dresselhaus G, Dresselhaus M S, Cancado L G, Jorioa A, Saito R 2007 Phys. Chem. Chem. Phys. 9 1276
[22]	Ferralis N, Maboudian R, Carraro C 2008 Phys. Rev. Lett. 101156801
[23]	Canc?ado L G, Takai K, Enoki T, Endo M, Kim Y A, Mizusaki H, Jorio A, Coelho L N, Magalh?aes-Paniago R, Pimenta M A 2006Appl. Phys. Lett. 88 163106
[24]	Ferrari A C, Meyer J C, Scardaci V, Casiraghi C, Lazzeri M, MauriF, Piscanec S, Jiang D, Novoselov K S, Roth S, Geim A K 2006Phys. Phys. Rev. Lett. 97 187401
[25]	Ferrari A C, Robertson J, Tan P H, Li F, Cheng H M translated2007 Raman Spectroscopy in Carbons: from Nanotubes to Diamondpp4–23 (in Chinese) [德里亚·卡罗·费拉里, 约翰·罗伯逊编, 谭平恒, 李峰, 成会明译 2007 碳材料的拉曼光谱——-从纳米管到金刚石 (北京: 化学工业出版社), 第4——23页]
[26]	Gupta A, Chen G, Joshi P, Tadigadapa S, Eklund P C 2006 NanoLett. 6 2667
[27]	Malarda L M, Pimentaa M A, Dresselhaus G, Dresselhaus M S2009 Phys. Rep. 473 51
[28]	Faugeras C, Nerrire A, Potemski M, Mahmood A, Dujardin E, Berger C, de Heer W A 2008 Appl. Phys. Lett. 92 011914
[29]	Tang J, Liu Z L, Ren P, Yao T, Yan W S, Xu P S , Wei S Q 2010Acta Phys. Sin. 59 372 (in Chinese) [唐军, 刘忠良, 任鹏, 姚涛, 闫文盛, 徐彭寿, 韦世强 2010 物理学报 59 372]
[30]	Batson P E 1993 Phys. Rev. B 48 2608
[31]	Fischer D A, Wentzcovitch R M, Carr R G, Continenza A, FreemanA J 1991 Phys. Rev. B 44 1427
[32]	Abbas M, Wu Z Y, Zhong J, Ibrahim K, Fiori A, Orlanducci S, Sessa V, TerranovaML, Ivan D 2005 Appl. Phys. Lett. 87 051923
[33]	Jeong H K, Colakerol L, Jin M H, Glans P A, Smith K E, Lee YH 2008 Chem. Phys. Lett. 460 499
[34]	Emtsev K V, Speck F, Seyller Th, Ley L 2008 Phys. Rev. B 77155303
[35]	Konya Z, Vesselenyi I, Kiss J, Farkas A, Oszko A 2004 Appl.Catalysis A: Grneral 260 55037302-6

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Vol. 61, Issue 3 - 2012-02-05

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