Thermoelectric properties of (AgSbTe2)100-x (GeTe)x fabricated by hot pressing method

Huo Feng-Ping; Wu Rong-Gui; Xu Gui-Ying; Niu Si-Tong

doi:10.7498/aps.61.087202

Abstract

Using pure metal Ag, Te, Ge and Sb powders as raw materials, (AgSbTe2)100-x-(GeTe)x (x=8090) (TAGS) are synthesized by vacuum reaction. X-ray diffraction (XRD) analysis results show that after sintering the alloys each have a rhombohedral structure. TAGS power is sintered by hot pressing method. Their phase compositions, crystal structures and morphologies are characterized by XRD and scanning electron microscope analysis methods. Their electric conductivities are measured by direct current method. Their Seebeck coefficients are measured when a temperature difference (T=14℃) is applied along two ends of sample. Through testing the thermoelectric properties of materials, the variations of different performance parameters of the sample are investigated in a temperature range of 30500℃. The results show that the sample is nano crystals and its thermoelectric properties change as the composition changes. We can see that TAGS-80 has a good thermal performance, with ZTmax=1.8 at 530℃.

Keywords:

Authors and contacts

1.
Key Laboratory of New Energy Materials of Beijing, School of Material Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

References

[1]	Chen G, Dresselhaus M S, Dresselhaus G, Fleurial J P, Caillat T 2003 Int. Mater. Rev. 48 45
[2]	Goldsmid H J 1986 Electronic Refrigeration (London: Pion) p10
[3]	Rowe D M 1996 Conversion and Application of Thermoelectric Material (Beijing: Weapon Industry Press) pp2, 19 (in Chinese) [Rowe D M 1996 温差电转换及其应用(中译本)(北京:兵器工业出版社) 第2,19页]
[4]	Rosi F D, Dismukes J P, Hockings E F 1960 Electr. Eng. 79 450
[5]	Skrabek E, Trimmer D 1976 U. S. Patent 3945855
[6]	Skrabek E A 1974 Am. Soc. Mech. Eng. 33 160
[7]	Yang S H, Zhu T J, Zhao X B 2007 Func. Mater. 38 1365 (in Chinese) [杨胜辉, 朱铁军, 赵新兵 2007 功能材料 38 1365]
[8]	Zhang S N, He J, Ji X H 2009 J. Electron. Mater. 38 1142
[9]	Cui J L, Fu H, Yan Y M 2010 J. Electron. Mater. 39 1493
[10]	Yang S H, Zhu T J 2010 J. Electron. Mater. 39 2127
[11]	Cook B A, Wu X Z 2007 J. Mater. Lett. 42 7643
[12]	Yuefei A Φ 1958 Thermoelectric Dipole of Semiconductor (Beijing: Science Press) p28 (in Chinese) [约飞 A Φ 1958 半导体温差电偶(中译本)(北京:科学出版社) 第28页]
[13]	Liu E K, Zhu B S, Luo J S 2005 Physial of Semiconductor (6th ed) (Beijing: Electronic Industry Press) p372 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2005 半导体物理学(第6版) (北京:电子工业出版社) 第372页]

Cited By

[1]	Chen G, Dresselhaus M S, Dresselhaus G, Fleurial J P, Caillat T 2003 Int. Mater. Rev. 48 45
[2]	Goldsmid H J 1986 Electronic Refrigeration (London: Pion) p10
[3]	Rowe D M 1996 Conversion and Application of Thermoelectric Material (Beijing: Weapon Industry Press) pp2, 19 (in Chinese) [Rowe D M 1996 温差电转换及其应用(中译本)(北京:兵器工业出版社) 第2,19页]
[4]	Rosi F D, Dismukes J P, Hockings E F 1960 Electr. Eng. 79 450
[5]	Skrabek E, Trimmer D 1976 U. S. Patent 3945855
[6]	Skrabek E A 1974 Am. Soc. Mech. Eng. 33 160
[7]	Yang S H, Zhu T J, Zhao X B 2007 Func. Mater. 38 1365 (in Chinese) [杨胜辉, 朱铁军, 赵新兵 2007 功能材料 38 1365]
[8]	Zhang S N, He J, Ji X H 2009 J. Electron. Mater. 38 1142
[9]	Cui J L, Fu H, Yan Y M 2010 J. Electron. Mater. 39 1493
[10]	Yang S H, Zhu T J 2010 J. Electron. Mater. 39 2127
[11]	Cook B A, Wu X Z 2007 J. Mater. Lett. 42 7643
[12]	Yuefei A Φ 1958 Thermoelectric Dipole of Semiconductor (Beijing: Science Press) p28 (in Chinese) [约飞 A Φ 1958 半导体温差电偶(中译本)(北京:科学出版社) 第28页]
[13]	Liu E K, Zhu B S, Luo J S 2005 Physial of Semiconductor (6th ed) (Beijing: Electronic Industry Press) p372 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2005 半导体物理学(第6版) (北京:电子工业出版社) 第372页]

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板