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Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate

Hu Hui-Yong Lei Shuai Zhang He-Ming Song Jian-Jun Xuan Rong-Xi Shu Bin Wang Bin

Citation:

Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate

Hu Hui-Yong, Lei Shuai, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin, Wang Bin
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  • Abstract views:  6468
  • PDF Downloads:  612
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Publishing process
  • Received Date:  06 July 2011
  • Accepted Date:  28 May 2012
  • Published Online:  05 May 2012

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