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Evolution of the dynamic recrystallization microstructure in the hot working process of metal is difficult to observe in real time experimentally. Based on Ginzburg-Landau kinetic equation, a physical metallurgy model with coupling multi-phase field method and the dislocation density calculation is used to simulate dynamic recrystallization in the thermal processing. The dynamic recrystallization processes at the different temperatures and different strain rates are investigated. The reason for the stress-strain curve changing from single peak state to the multi-peak state is explained. In addition, we systematically simulate the process of multi-stage deformation and the effect of static recovery on dynamic recrystallization, and analyze the influence of thermal processing parameters on the kinetics of dynamic recrystallization. The simulation results show that the grain size increases during suspension of deformation, and higher deformation temperature and lower deformation strain rate can accelerate the process of dynamic recrystallization.
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Keywords:
- dynamic recrystallization /
- stress-strain /
- static recovery /
- multi-phase-field model
[1] Momeni A, Dehghani K, Ebrahimi G R 2011 J. Alloy. Compd. 509 9387
[2] Manonukul A, Dunne F P E 1999 Acta Mater. 47 4340
[3] Ivasishin O M, Shevchenko S V, Semiatin S L 2009 Acta Mater. 57 2834
[4] Radhakrishnan B, Sarma G B, Zacharia T 1998 Acta Mater. 46 4415
[5] Shen X M, Guan X J, Zhang J X, Liu Y T, Ma X F, Zhao X M 2007 Chin. J. Nonferrous Met. 17 124 (in Chinese) [申孝民, 关小军, 张继祥, 刘运腾, 麻晓飞, 赵宪明 2007 中国有色金属学报 17 124]
[6] Sepehrband P, Esmaeili S 2010 Scripta Mater. 63 4
[7] Goetz R L, Seetharaman V 1998 Scripta Mater. 38 405
[8] Yang H, Wu C, Li H W, Fan X G 2011 Sci. China Tech. Sci. 54 2107
[9] Yin H, Felicelli S D, Wang L 2011 Acta Mater. 59 3124
[10] Kugler G, Turk R 2004 Acta Mater. 52 4659
[11] Ding R, Guo Z X 2001 Acta Mater. 49 3163
[12] Chen F, Cui Z S, Liu J, Chen W, Chen S J 2010 Mater. Sci. Eng. A 527 5539
[13] Das S 2010 Comput. Mater. Sci. 47 705
[14] Hallberg H, Wallin M, Ristinmaa M 2010 Comput. Mater. Sci. 49 25
[15] Li J J, Wang J C, Xu Q, Yang G C 2007 Acta Phys. Sin. 56 1514 (in Chinese) [李俊杰, 王锦程, 许泉, 杨根仓 2007 物理学报 56 1514]
[16] Zhang X G, Zong Y P, Wang M T, Wu Y 2011 Acta Phys. Sin. 60 068201 (in Chinese) [张宪刚, 宗亚平, 王明涛, 吴艳 2011 物理学报 60 068201]
[17] Zhang Q, Wang J C, Zhang Y C, Yang G C 2011 Acta Phys. Sin. 60 088104 (in Chinese) [张琪, 王锦程, 张亚丛, 杨根仓 2011 物理学报 60 088104]
[18] Yang Y J, Wang J C, Zhang Y X, Zhu Y C, Yang G C 2008 Acta Phys. Sin. 57 5290 (in Chinese) [杨玉娟, 王锦程, 张玉祥, 朱耀产, 杨根仓 2008 物理学报 57 5290]
[19] Zong Y P, Wang M T, Guo W 2009 Acta Phys. Sin. 58 S161 (in Chinese) [宗亚平, 王明涛, 郭巍 2009 物理学报 58 S161]
[20] Wang M T, Zong Y P, Wang G 2009 Comput. Mater. Sci. 45 217
[21] Gao Y J, Luo Z R, Hu X Y, Huang C G 2010 Acta Metall. Sin. 46 1161 (in Chinese) [高英俊, 罗志荣, 胡项英, 黄创高 2010金属学报 46 1161]
[22] Suwa Y, Sait Y, Onodera H 2008 Comput. Mater. Sci. 44 286
[23] Takaki T, Hisakuni Y, Hirouchi T 2009 Comput. Mater. Sci. 45 881
[24] Steinbach I, Pezzolla F 1999 Physica D 134 385
[25] Steinbach I, Pezzolla F, Nestler B, Seebelberg M, Prieler R, Schmitz G J, Rezende J L L 1996 Physica D 94 135
[26] Kocks U F 1976 J. Eng. Mater. Tech. 98 76
[27] Mecking H, Kocks U F 1981 Acta Metall. 29 1865
[28] Kim S G, Kim D I, Kim W T 2006 Phys. Rev. E 74 061605
[29] Fan D, Chen L Q 1997 Acta Mater. 45 611
[30] Fan D, Geng C W, Chen L Q 1997 Acta Mater. 45 1115
[31] Lee H W, Im Y T 2011 Mater. Trans. 51 1614
[32] Dehghan-Manshadi A, Barnett M R, Hodgson P D 2008 Metall. Mater. Trans. A 39A 1359
[33] Liu J, Cui Z S, Li C X 2008 Comput. Mater. Sci. 41 375
[34] Zhang Y, Zeng X Q, Lu C, Ding W J 2006 Mater. Sci. Eng. A 428 91
[35] Blaz L, Sakai T, Jonas J J 1983 Met. Sci. 17 610
[36] Sakai T 1995 J. Mater. Process Technol. 53 349
[37] Barnett M R, Kelly G L, Hodgson P D 2000 Scripta Mater. 43 365
[38] Bao S Q, Zhao G, Yu C B, Chang Q M, Ye C L, Mao X P 2011 Appl. Math. Model. 35 3268
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[1] Momeni A, Dehghani K, Ebrahimi G R 2011 J. Alloy. Compd. 509 9387
[2] Manonukul A, Dunne F P E 1999 Acta Mater. 47 4340
[3] Ivasishin O M, Shevchenko S V, Semiatin S L 2009 Acta Mater. 57 2834
[4] Radhakrishnan B, Sarma G B, Zacharia T 1998 Acta Mater. 46 4415
[5] Shen X M, Guan X J, Zhang J X, Liu Y T, Ma X F, Zhao X M 2007 Chin. J. Nonferrous Met. 17 124 (in Chinese) [申孝民, 关小军, 张继祥, 刘运腾, 麻晓飞, 赵宪明 2007 中国有色金属学报 17 124]
[6] Sepehrband P, Esmaeili S 2010 Scripta Mater. 63 4
[7] Goetz R L, Seetharaman V 1998 Scripta Mater. 38 405
[8] Yang H, Wu C, Li H W, Fan X G 2011 Sci. China Tech. Sci. 54 2107
[9] Yin H, Felicelli S D, Wang L 2011 Acta Mater. 59 3124
[10] Kugler G, Turk R 2004 Acta Mater. 52 4659
[11] Ding R, Guo Z X 2001 Acta Mater. 49 3163
[12] Chen F, Cui Z S, Liu J, Chen W, Chen S J 2010 Mater. Sci. Eng. A 527 5539
[13] Das S 2010 Comput. Mater. Sci. 47 705
[14] Hallberg H, Wallin M, Ristinmaa M 2010 Comput. Mater. Sci. 49 25
[15] Li J J, Wang J C, Xu Q, Yang G C 2007 Acta Phys. Sin. 56 1514 (in Chinese) [李俊杰, 王锦程, 许泉, 杨根仓 2007 物理学报 56 1514]
[16] Zhang X G, Zong Y P, Wang M T, Wu Y 2011 Acta Phys. Sin. 60 068201 (in Chinese) [张宪刚, 宗亚平, 王明涛, 吴艳 2011 物理学报 60 068201]
[17] Zhang Q, Wang J C, Zhang Y C, Yang G C 2011 Acta Phys. Sin. 60 088104 (in Chinese) [张琪, 王锦程, 张亚丛, 杨根仓 2011 物理学报 60 088104]
[18] Yang Y J, Wang J C, Zhang Y X, Zhu Y C, Yang G C 2008 Acta Phys. Sin. 57 5290 (in Chinese) [杨玉娟, 王锦程, 张玉祥, 朱耀产, 杨根仓 2008 物理学报 57 5290]
[19] Zong Y P, Wang M T, Guo W 2009 Acta Phys. Sin. 58 S161 (in Chinese) [宗亚平, 王明涛, 郭巍 2009 物理学报 58 S161]
[20] Wang M T, Zong Y P, Wang G 2009 Comput. Mater. Sci. 45 217
[21] Gao Y J, Luo Z R, Hu X Y, Huang C G 2010 Acta Metall. Sin. 46 1161 (in Chinese) [高英俊, 罗志荣, 胡项英, 黄创高 2010金属学报 46 1161]
[22] Suwa Y, Sait Y, Onodera H 2008 Comput. Mater. Sci. 44 286
[23] Takaki T, Hisakuni Y, Hirouchi T 2009 Comput. Mater. Sci. 45 881
[24] Steinbach I, Pezzolla F 1999 Physica D 134 385
[25] Steinbach I, Pezzolla F, Nestler B, Seebelberg M, Prieler R, Schmitz G J, Rezende J L L 1996 Physica D 94 135
[26] Kocks U F 1976 J. Eng. Mater. Tech. 98 76
[27] Mecking H, Kocks U F 1981 Acta Metall. 29 1865
[28] Kim S G, Kim D I, Kim W T 2006 Phys. Rev. E 74 061605
[29] Fan D, Chen L Q 1997 Acta Mater. 45 611
[30] Fan D, Geng C W, Chen L Q 1997 Acta Mater. 45 1115
[31] Lee H W, Im Y T 2011 Mater. Trans. 51 1614
[32] Dehghan-Manshadi A, Barnett M R, Hodgson P D 2008 Metall. Mater. Trans. A 39A 1359
[33] Liu J, Cui Z S, Li C X 2008 Comput. Mater. Sci. 41 375
[34] Zhang Y, Zeng X Q, Lu C, Ding W J 2006 Mater. Sci. Eng. A 428 91
[35] Blaz L, Sakai T, Jonas J J 1983 Met. Sci. 17 610
[36] Sakai T 1995 J. Mater. Process Technol. 53 349
[37] Barnett M R, Kelly G L, Hodgson P D 2000 Scripta Mater. 43 365
[38] Bao S Q, Zhao G, Yu C B, Chang Q M, Ye C L, Mao X P 2011 Appl. Math. Model. 35 3268
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