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Effects of the annealing temperature on microstructure and room-temperature ferromagnetism of N+ ion-implanted ZnO: Mn thin film

Yang Tian-Yong Kong Chun-Yang Ruan Hai-Bo Qin Guo-Ping Li Wan-Jun Liang Wei-Wei Meng Xiang-Dan Zhao Yong-Hong Fang Liang Cui Yu-Ting

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Effects of the annealing temperature on microstructure and room-temperature ferromagnetism of N+ ion-implanted ZnO: Mn thin film

Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting
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  • The Mn-N codoped ZnO thin films are fabricated on quartz glass substrates using the radio-frequency magnetron sputtering technique together with the direct N+ ion-implantation. The effects of annealing temperature on microstructure and room-temperature ferromagnetism of the thin films are investigated. The results indicate that both divalent Mn2+ and trivalent N3- ions are incorporated into ZnO lattice. As the annealing temperature increases, the lattice distortion induced by N+ ion-implantation can decrease, and the N3- may escape from the film, which results in the reducing of acceptor (NO) concentration. Ferromagnetism is observed in the (Mn,N)-codoped ZnO thin film at 300 K and found to be the sensitive to the acceptor concentration. The mechanism of room-temperature ferromagnetism in the ZnO:(Mn, N) is discussed based on the bound magnetic polaron model.
    • Funds: Project supported by the Natural Science Foundation of Chongqing, China (Grant No. CSTC. 2011BA4031).
    [1]

    Look D C 2001 Mater. Sci. Eng. B 80 383

    [2]

    Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnar S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488

    [3]

    Dietl T, Ohno H, Matsukura F, Clibert J, Ferrand D 2000 Science 287 1019

    [4]

    Souza T M, Cunha Lima da I C, Boselli M A 2008 Appl. Phys. Lett. 92 152511

    [5]

    Zhao L, Lu P F, Yu Z Y, Guo X T, Shen Y, Ye H, Yuan G F, Zhang L 2010 J. Appl. Phys. 108 113924

    [6]

    Zou C W, Wang H J, Yi M L, Li M, Liu C S, Guo L P, Fu D J, Kang T W 2010 Appl. Surf. Sci. 256 2453

    [7]

    Qiu D J, Wang J, Ding K B, Shi H J, Jia Y 2008 Acta Phys. Sin. 57 5249 (in Chinese) [邱东江, 王俊, 丁扣宝, 施红军, 郏寅 2008 物理学报 57 5249]

    [8]

    Lu Z L, Yan G Q, Wang S, Zou W Q, Mo Z R, Lü L Y, Zhang F M, Du Y W, Xu M X, Xia Z H 2008 J. Appl. Phys. 104 033919

    [9]

    Yang Z, Liu J L, Biasini M, Beyermann W P 2008 Appl. Phys. Lett. 92 042111

    [10]

    Yan H L, Zhong X L, Wang J B, Huang G J, Ding S L, Zhou G C, Zhou Y C 2007 Appl. Phys. Lett. 90 082503

    [11]

    Xu Q Y, Schmidt H, Hartmann L, Hochmuth H, Lorenz M, Setzer A, Esquinazi P, Meinecke C, Grundmann M 2007 Appl. Phys. Lett. 91 092503

    [12]

    Wang Q, Sun Q, Jena P, Kawazoe K 2004 Phys. Rev. B 70 052408

    [13]

    Zou W Q, Lu Z L, Wang S, Liu Y, Lu L, Li L, Zhang F M, Dou Y W 2009 Acta Phys. Sin. 58 5763 (in Chinese) [邹文琴, 路忠林, 王申, 刘圆, 陆路, 郦莉, 张凤鸣, 都有为 2009 物理学报 58 5763]

    [14]

    Xu H Y, Liu Y C, Xu C S, Liu Y X, Shao C L 2006 Appl. Phys. Lett. 88 242502

    [15]

    Peng L P, Fang L, Yang X F, Li Y J, Huang Q L, Wu F, Kong C Y 2009 J. Alloys Compd. 484 576

    [16]

    Samanta K, Bhattacharya P, Katiyar R S, Lwamoto W, Pagliuso P G, Rettori C 2006 Phys. Rev. B 73 245213

    [17]

    Asmar A R, Atanas J P, Ajaka M, Zaatar Y, Ferblantier G, Sauvajol J L, Jabbour J, Juillaget S, Foucaran A 2005 J. Cryst. Growth 279 399

    [18]

    Kaschner A, Haboeck U, Martin S, Matthias S, Kaczmarczyk G, Hoffmann A, Thomsen C, Zeuner Z, Alves H R, Hofmann D M, Meyer B K 2002 Appl. Phys. Lett. 80 1909

    [19]

    Friedrich F, Gluba M A, Nickel N H 2009 Appl. Phys. Lett. 95 141903

    [20]

    Wang J B, Zhong H M, Li Z F, Liu W 2006 Appl. Phys. Lett. 88 101913

    [21]

    Bundesmann C, Ashkenov N, Shubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974

    [22]

    Wang J B, Huang G J, Zhong X L, Sun L Z, Zhou T C, Liu E H 2006 Appl. Phys. Lett. 88 252502

    [23]

    Yadav H K, Sreenivas K, Katiyar R S, Gupta V 2007 J. Appl. D: Appl. Phys. 40 6005

    [24]

    Hu Y M, Wang C Y, Lee S S, Han T C, Chou W Y, Chen G J 2011 J. Raman Spectrosc. 42 434

    [25]

    He Q B, Xu J Y, Li X H, Kamzin A, Kamzina L 2007 Chin. Phys. Lett. 24 3500

    [26]

    Cong C J, Liao L, Liu Q Y, Li J C, Zhang K L 2006 Nanotechnology 17 1520

    [27]

    Tang K, Gu S L, Zhu S M, Liu J G, Chen H, Ye J D, Zhang R, Zheng Y D 2009 Appl. Phys. Lett. 95 192106

    [28]

    Yang H J, Zhao L Y, Zhang Y J, Wang Y X, Liu H L, Wei M B 2007 Solid State Commun. 143 566

  • [1]

    Look D C 2001 Mater. Sci. Eng. B 80 383

    [2]

    Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnar S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488

    [3]

    Dietl T, Ohno H, Matsukura F, Clibert J, Ferrand D 2000 Science 287 1019

    [4]

    Souza T M, Cunha Lima da I C, Boselli M A 2008 Appl. Phys. Lett. 92 152511

    [5]

    Zhao L, Lu P F, Yu Z Y, Guo X T, Shen Y, Ye H, Yuan G F, Zhang L 2010 J. Appl. Phys. 108 113924

    [6]

    Zou C W, Wang H J, Yi M L, Li M, Liu C S, Guo L P, Fu D J, Kang T W 2010 Appl. Surf. Sci. 256 2453

    [7]

    Qiu D J, Wang J, Ding K B, Shi H J, Jia Y 2008 Acta Phys. Sin. 57 5249 (in Chinese) [邱东江, 王俊, 丁扣宝, 施红军, 郏寅 2008 物理学报 57 5249]

    [8]

    Lu Z L, Yan G Q, Wang S, Zou W Q, Mo Z R, Lü L Y, Zhang F M, Du Y W, Xu M X, Xia Z H 2008 J. Appl. Phys. 104 033919

    [9]

    Yang Z, Liu J L, Biasini M, Beyermann W P 2008 Appl. Phys. Lett. 92 042111

    [10]

    Yan H L, Zhong X L, Wang J B, Huang G J, Ding S L, Zhou G C, Zhou Y C 2007 Appl. Phys. Lett. 90 082503

    [11]

    Xu Q Y, Schmidt H, Hartmann L, Hochmuth H, Lorenz M, Setzer A, Esquinazi P, Meinecke C, Grundmann M 2007 Appl. Phys. Lett. 91 092503

    [12]

    Wang Q, Sun Q, Jena P, Kawazoe K 2004 Phys. Rev. B 70 052408

    [13]

    Zou W Q, Lu Z L, Wang S, Liu Y, Lu L, Li L, Zhang F M, Dou Y W 2009 Acta Phys. Sin. 58 5763 (in Chinese) [邹文琴, 路忠林, 王申, 刘圆, 陆路, 郦莉, 张凤鸣, 都有为 2009 物理学报 58 5763]

    [14]

    Xu H Y, Liu Y C, Xu C S, Liu Y X, Shao C L 2006 Appl. Phys. Lett. 88 242502

    [15]

    Peng L P, Fang L, Yang X F, Li Y J, Huang Q L, Wu F, Kong C Y 2009 J. Alloys Compd. 484 576

    [16]

    Samanta K, Bhattacharya P, Katiyar R S, Lwamoto W, Pagliuso P G, Rettori C 2006 Phys. Rev. B 73 245213

    [17]

    Asmar A R, Atanas J P, Ajaka M, Zaatar Y, Ferblantier G, Sauvajol J L, Jabbour J, Juillaget S, Foucaran A 2005 J. Cryst. Growth 279 399

    [18]

    Kaschner A, Haboeck U, Martin S, Matthias S, Kaczmarczyk G, Hoffmann A, Thomsen C, Zeuner Z, Alves H R, Hofmann D M, Meyer B K 2002 Appl. Phys. Lett. 80 1909

    [19]

    Friedrich F, Gluba M A, Nickel N H 2009 Appl. Phys. Lett. 95 141903

    [20]

    Wang J B, Zhong H M, Li Z F, Liu W 2006 Appl. Phys. Lett. 88 101913

    [21]

    Bundesmann C, Ashkenov N, Shubert M, Spemann D, Butz T, Kaidashev E M, Lorenz M, Grundmann M 2003 Appl. Phys. Lett. 83 1974

    [22]

    Wang J B, Huang G J, Zhong X L, Sun L Z, Zhou T C, Liu E H 2006 Appl. Phys. Lett. 88 252502

    [23]

    Yadav H K, Sreenivas K, Katiyar R S, Gupta V 2007 J. Appl. D: Appl. Phys. 40 6005

    [24]

    Hu Y M, Wang C Y, Lee S S, Han T C, Chou W Y, Chen G J 2011 J. Raman Spectrosc. 42 434

    [25]

    He Q B, Xu J Y, Li X H, Kamzin A, Kamzina L 2007 Chin. Phys. Lett. 24 3500

    [26]

    Cong C J, Liao L, Liu Q Y, Li J C, Zhang K L 2006 Nanotechnology 17 1520

    [27]

    Tang K, Gu S L, Zhu S M, Liu J G, Chen H, Ye J D, Zhang R, Zheng Y D 2009 Appl. Phys. Lett. 95 192106

    [28]

    Yang H J, Zhao L Y, Zhang Y J, Wang Y X, Liu H L, Wei M B 2007 Solid State Commun. 143 566

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Publishing process
  • Received Date:  11 January 2012
  • Accepted Date:  15 February 2012
  • Published Online:  05 August 2012

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