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Ultrafast carrier dynamics in CdTe/CdS Core/Shell quantum dots

Li Xia Feng Dong-Hai He Hong-Yan Jia Tian-Qing Shan Lu-Fan Sun Zhen-Rong Xu Zhi-Zhan

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Ultrafast carrier dynamics in CdTe/CdS Core/Shell quantum dots

Li Xia, Feng Dong-Hai, He Hong-Yan, Jia Tian-Qing, Shan Lu-Fan, Sun Zhen-Rong, Xu Zhi-Zhan
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  • On the basic of the synthesis of CdTe/CdS core/shell quantum dots (QDs) in aqueous phase, we study ultrafast carrier dynamic behaviors of CdTe/CdS QDs with different shell thicknesses, by using femtosecond time-resolved transmission spectroscopy. The results show that both the buildup time of the lowest exciton state and its following relaxation time become longer as CdS shell thickness increases. The results also indicate that the buildup rate of a space-separate exciton is slower than that of a space-overlapped exciton, and that carrier relaxation changes from surface-defect related mechanism into surface-passivated charge separation regime, which is consistent with steady-state absorption and photoluminescence experiments.
    • Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB923203), the National Natural Science Foundation of China (Grant No. 10904038), and the Shanghai Municipal Science and Technology Commission (Grant Nos. 09JC1404700, 10PJ1403400, 11JC1403500).
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    [4]

    Mattoussi H, Mauro J M, Goldman E R, Anderson G P, Sundar V C, Mikulec F V, Bawendi M G 2000 J. Am. Chem. Soc. 122 12142

    [5]

    Jaiswal J K, Mattoussi H, Mauro J M, Simon S M 2003 Nat. Biotechnol. 21 47

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    An L M, Yang Y Q, Song W S, Su W H, Zeng Q H, Chao K F, Kong X G 2009 Acta Phys. Sin. 58 7914 (in Chinese) [安利民,杨延强,宋维斯,苏文辉,曾庆辉,朝克夫,孔祥贵 2009 物理学报 58 7914]

    [7]

    Chuang C H, Lo S S, Scholes G D, Burda C 2010 J. Phy. Chem. Lett. 1 2530

    [8]

    Chuang C H,Doane T L,Lo S S,Scholes G D,Burda C 2011 ACS Nano. 5 6016

    [9]

    Gu Z Y, Zou L, Fang Z, Zhu W H, Zhong X H 2008 Nanotechnology 19 135604

    [10]

    Zeng Q H, Kong X G, Sun Y J, Zhang Y L, Tu L P, Zhao J L, Zhang H 2008 J. Phys. Chem. C 112 8587

    [11]

    Zeng R S, Zhang T T, Liu J C, Hu S, Wan Q, Liu X M, Peng Z W, Zou B S 2009 Nanotechnology 20 095102

    [12]

    Padilha L A, Neves A A R, Cesar C L, Barbosa L C, Brito Cruz C H 2004 Appl. Phys. Lett. 85 3256

  • [1]

    Peng X G, Schlamp M C, Kadavanich A V, Alivisatos A P 1997 J. Am. Chem. Soc. 119 7019

    [2]

    Barnham K, Marques J L, Hassard J, O'Brien P 2000 Appl. Phys. Lett. 76 1197

    [3]

    Gao M Y, Lesser C, Kirstein S, Mohwald H, Rogach A L, Weller H 2000 J. Appl. Phys. 87 2297

    [4]

    Mattoussi H, Mauro J M, Goldman E R, Anderson G P, Sundar V C, Mikulec F V, Bawendi M G 2000 J. Am. Chem. Soc. 122 12142

    [5]

    Jaiswal J K, Mattoussi H, Mauro J M, Simon S M 2003 Nat. Biotechnol. 21 47

    [6]

    An L M, Yang Y Q, Song W S, Su W H, Zeng Q H, Chao K F, Kong X G 2009 Acta Phys. Sin. 58 7914 (in Chinese) [安利民,杨延强,宋维斯,苏文辉,曾庆辉,朝克夫,孔祥贵 2009 物理学报 58 7914]

    [7]

    Chuang C H, Lo S S, Scholes G D, Burda C 2010 J. Phy. Chem. Lett. 1 2530

    [8]

    Chuang C H,Doane T L,Lo S S,Scholes G D,Burda C 2011 ACS Nano. 5 6016

    [9]

    Gu Z Y, Zou L, Fang Z, Zhu W H, Zhong X H 2008 Nanotechnology 19 135604

    [10]

    Zeng Q H, Kong X G, Sun Y J, Zhang Y L, Tu L P, Zhao J L, Zhang H 2008 J. Phys. Chem. C 112 8587

    [11]

    Zeng R S, Zhang T T, Liu J C, Hu S, Wan Q, Liu X M, Peng Z W, Zou B S 2009 Nanotechnology 20 095102

    [12]

    Padilha L A, Neves A A R, Cesar C L, Barbosa L C, Brito Cruz C H 2004 Appl. Phys. Lett. 85 3256

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Publishing process
  • Received Date:  09 January 2012
  • Accepted Date:  01 April 2012

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