The optimization of lithography process on the deep muti-stepped surface

Sun Li-Yuan; Gao Zhi-Yuan; Zou De-Shu; Zhang Lu; Ma Li; Tian Liang; Shen Guang-Di

doi:10.7498/aps.61.206801

Abstract

In this article, we investigate the problems existing in the lithography on the deep multi-stepped surface. Different photoresist thicknesses above and under the step are measured in experiment. The relationship between step height and photoresist thickness is discussed and numerically described. Based on the description of Beer model about the light absorption coefficient, the curves of different light transmittances at different times are analysed. Reasons why the light transmittance changes with time are explained, and the light absorption coefficient is believed to be related to photoresist thickness. On this basis, the lithography process is optimized. The patterns with narrow line-width under the deep step on the wafer are obtained.

Keywords:

multi-stepped /
lithography processes

Authors and contacts

1.
Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
Funds: Project supported by the Scientific Research Staring Foundation for the Doctors, Beijing University of Technology, China (Grant No. X0002013201101) and the Scientific Research Foundation for the Graduates, Beijing University of Technology, China (Grant No. ykj-2011-6208).

References

[1]	Chen B Q 2011 Micronanoelectronic Technol. 48 1 (in Chinese) [陈宝钦 2011 微纳电子技术 48 1]
[2]	Chen B Q 2011 Micronanoelectronic Technol. 48 69 (in Chinese) [陈宝钦 2011 微纳电子技术 48 69]
[3]	Wen J, Yin H Q, Zhang R J, Cao W B 2007 Chin. J. Semicond. Sin. 28 357 (in Chinese) [文景, 尹海清, 张瑞娟, 曹文斌 2007 半导体学报 28 357]
[4]	Liu S J, Du J L, Duan Q, Luo B L, Tang X G, Guo Y K, Du C L 2005 Chin. J. Semicond. Sin. 26 1065 (in Chinese) [刘世杰, 杜惊雷, 段茜, 罗铂靓, 唐雄贵, 郭永康, 杜春雷 2007 半导体学报 28 357]
[5]	Dill F H 1996 IEEE Trans. Electron Dev. 22 440
[6]	Shao J X 1993 Semicond. Technol. 5 32 (in Chinese) [邵建新 1993 半导体技术 5 32]
[7]	Sun X, You S F, Xiao P, Ding Z J 2006 Acta Phys. Sin. 55 149 (in Chinese) [孙霞, 尤四方, 肖沛, 丁泽军 2006 物理学报 55 149]

Cited By

[1]	Chen B Q 2011 Micronanoelectronic Technol. 48 1 (in Chinese) [陈宝钦 2011 微纳电子技术 48 1]
[2]	Chen B Q 2011 Micronanoelectronic Technol. 48 69 (in Chinese) [陈宝钦 2011 微纳电子技术 48 69]
[3]	Wen J, Yin H Q, Zhang R J, Cao W B 2007 Chin. J. Semicond. Sin. 28 357 (in Chinese) [文景, 尹海清, 张瑞娟, 曹文斌 2007 半导体学报 28 357]
[4]	Liu S J, Du J L, Duan Q, Luo B L, Tang X G, Guo Y K, Du C L 2005 Chin. J. Semicond. Sin. 26 1065 (in Chinese) [刘世杰, 杜惊雷, 段茜, 罗铂靓, 唐雄贵, 郭永康, 杜春雷 2007 半导体学报 28 357]
[5]	Dill F H 1996 IEEE Trans. Electron Dev. 22 440
[6]	Shao J X 1993 Semicond. Technol. 5 32 (in Chinese) [邵建新 1993 半导体技术 5 32]
[7]	Sun X, You S F, Xiao P, Ding Z J 2006 Acta Phys. Sin. 55 149 (in Chinese) [孙霞, 尤四方, 肖沛, 丁泽军 2006 物理学报 55 149]

[1]	Chang Chao, Kou Jin-Zong, Xu Xiao-Zhi. Growth of two-dimensional single crystal materials controlled by atomic steps. Acta Physica Sinica, 2023, 72(20): 208101. doi: 10.7498/aps.72.20230887
[2]	Jiang Zhong-Jun, He Wei, Chen Jing-Wei, Luo Dan-Yang, Yang Fan, Jiang Kai, Wang Liang. Fresnel diffraction lithography. Acta Physica Sinica, 2023, 72(1): 014202. doi: 10.7498/aps.72.20221533
[3]	Li Yuan, Shi Ai-Hong, Chen Guo-Yu, Gu Bing-Dong. Formation of step bunching on 4H-SiC (0001) surfaces based on kinetic Monte Carlo method. Acta Physica Sinica, 2019, 68(7): 078101. doi: 10.7498/aps.68.20182067
[4]	Liu Fang, Li Yun-Xiang, Huang Yi-Dong. Nanolithography based on two-surface-plasmon-polariton-absorption. Acta Physica Sinica, 2017, 66(14): 148101. doi: 10.7498/aps.66.148101
[5]	Wang Xiao-Hu, Yi Shi-He, Fu Jia, Lu Xiao-Ge, He Lin. Experimental investigation on surface heat transfer characteristics of hypersonic two-dimensional rearward-facing step flow. Acta Physica Sinica, 2015, 64(5): 054706. doi: 10.7498/aps.64.054706
[6]	Zhu Yang-Zhu, Yi Shi-He, Kong Xiao-Ping, He Lin. Fine structures and characteristics on supersonic flow over backward facing step with tangential injection. Acta Physica Sinica, 2015, 64(6): 064701. doi: 10.7498/aps.64.064701
[7]	Shi Jian-Zhen, Yang Shen, Zou Ya-Qi, Ji Xian-Ming, Yin Jian-Ping. Generation of vortex beams by the four-step phase plates. Acta Physica Sinica, 2015, 64(18): 184202. doi: 10.7498/aps.64.184202
[8]	Zhang Ji-Tao, Wu Xue-Jian, Li Yan, Wei Hao-Yun. Method for improving the accuracy of step height measurement based on optical frequency comb. Acta Physica Sinica, 2012, 61(10): 100601. doi: 10.7498/aps.61.100601
[9]	Qiu Ke-Qiang, Liu Zheng-Kun, Xu Xiang-Dong, Liu Ying, Hong Yi-Lin, Fu Shao-Jun. Standing wave in holographic lithography. Acta Physica Sinica, 2012, 61(1): 014204. doi: 10.7498/aps.61.014204
[10]	Wu Rong, Hua Neng, Zhang Xiao-Bo, Cao Guo-Wei, Zhao Dong-Feng, Zhou Shen-Lei. Large-diameter multi-level diffractive optical elements with high energy efficiency. Acta Physica Sinica, 2012, 61(22): 224202. doi: 10.7498/aps.61.224202
[11]	Zhang Jian-Min, Xu Ke-Wei, Shu Yu, Wang Guo-Hong. First-principles study of the multilayer relaxation of Cu stepped surfaces. Acta Physica Sinica, 2010, 59(7): 4911-4918. doi: 10.7498/aps.59.4911
[12]	Tang Zhen-Kun, Wang Ling-Ling, Tang Li-Ming, You Kai-Ming, Zou Bing-Suo. Spin polarized transport of two-dimensional electron gas through step-magnetic barrier structure. Acta Physica Sinica, 2008, 57(9): 5899-5905. doi: 10.7498/aps.57.5899
[13]	Chen Lei-Ming, Guo Yan-Feng, Guo Xi, Tang Wei-Hua. Molds for nanoimprinting made by modified photoresist. Acta Physica Sinica, 2006, 55(12): 6511-6514. doi: 10.7498/aps.55.6511
[14]	Sun Xia, You Si-Fang, Xiao Pei, Ding Ze-Jun. Simulation of the proximity effect of electron beam lithography. Acta Physica Sinica, 2006, 55(1): 148-154. doi: 10.7498/aps.55.148
[15]	HAN BING, CHEN GENG-HUA, XU FENG-ZHI, ZHAO SHI-PING, YANG QIAN-SHENG. YBCO STEP-EDGE JUNCTION DC-SQUID PLANAR GRADIOMETER. Acta Physica Sinica, 2000, 49(10): 2051-2054. doi: 10.7498/aps.49.2051
[16]	WANG QIANG-HUA, WANG WEI, YAO XI-XIAN. RETURNING EFFECT AND THE FIRST ZERO FIELD STEP IN AN ANNULAR JOSEPHSON JUNCTION. Acta Physica Sinica, 1992, 41(1): 115-122. doi: 10.7498/aps.41.115
[17]	XU KUN-MING, LU DAO-FANG, YAO XI-XIAN. ZERO FIELD STEPS IN AN ANNULAR SYMMETRIC JOSEPHSON JUNCTION. Acta Physica Sinica, 1992, 41(1): 97-105. doi: 10.7498/aps.41.97
[18]	LIU ZENG-RONG, JIANG XIA-MEI, HUN ZHI-BIN, GU GUO-QING. THE SUB-STEPS OF I-V CHARACTERISTICS IN JOSEPHSON JUNCTION. Acta Physica Sinica, 1990, 39(5): 823-829. doi: 10.7498/aps.39.823
[19]	CHEN XIAO-HUA, XU YA-BO, W. RANKE, LI HAI-YANG, JI ZHEN-GUO. THE STEP-RELATED ELECTRONIC STATES ON THE VICINAL SURFACES OF Si(001). Acta Physica Sinica, 1987, 36(6): 807-813. doi: 10.7498/aps.36.807
[20]	WU HANG-SHENG, JI GUANG-DA, LIU FU-SUI. EFFECT OF A MAGNETIC FIELD ON THE HEIGHT OF THE MICROWAVE-INDUCED STEP. Acta Physica Sinica, 1977, 26(4): 353-362. doi: 10.7498/aps.26.353

Catalog

Vol. 61, Issue 20 - 2012-10-20

Metrics

Abstract views: 5907
PDF Downloads: 572
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板