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C60/Pentacene-based ambipolar organic heterostructure field-effect transistors (AOFETs) with Al source-drain (S/D) electrodes modified by inserting a transition metal oxide (V2O5) layer are fabricated. Compared with the device without V2O5 modified layer, the modified device shows good ambipolar characteristics with a hole mobility of 8.6× 10-2 cm2/V·s-1 and an electron mobility of 6.4× 10-2 cm2/V·s-1, and threshold voltages of 25 and -25 V, respectively. These performance improvements are ascribed to the presence of V2O5 layer at the Pentacene/Al interface which significantly reduces the source/drain contact resistance, increases the holes injection and makes electronic and hole injection close to balance. This result indicates that modified electrodes by V2O5 film is an effective approach to fabricating low cost and high performance AOFETs for realizing commercial applications.
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[2] Liu P, Wu Y L, Li Y N, Zhu S P 2006 J. Am. Chem. Soc. 128 4554
[3] Hu Y C, Dong G F, Wang L D, Liang Y, Qiu Y 2004 Chin. Phys. Lett. 21 723
[4] Di C A, Yu G, Liu Y Q, Guo Y L, Wang Y, Wu W P, Zhu D B 2008 Adv. Mater. 20 1286
[5] Nie G Z, Peng J B, Zhou R L 2011 Acta Phys. Sin. 60 127304 (in Chinese) [ 聂国政, 彭俊彪, 周仁龙 2011 物理学报 60 127304]
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[10] Kuwahara E, Kubozono Y, Hosokawa T, Nagano T, Masunari K, Fujiwara A 2004 Appl. Phys. Lett. 85 4765
[11] Hu Y, Tsubasa K, Hidenori O 2009 Appl. Phys. Lett. 94 023305
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[14] Li S H, Xu Z, Ma L, Chu C W, Yang Y 2007 Appl. Phys. Lett. 91 083507
[15] Chu C W, Li S H, Chen C W, Shrotriya V, Yang Y 2005 Appl. Phys. Lett. 87 193508
[16] Generali G, Capelli R, Toffanin S, Facchetti A, Michele M 2010 Microelectronics Reliabilit. 50 1861
[17] Ishii H, Sugiyama K, Ito E, Seki K 1999 Adv. Mater. 11 605
[18] Zhao G, Cheng X M, Tian H J, Du B Q, Liang X Y 2011 Chin. Phys. Lett. 28 127203
[19] Hong Z R, Huang Z H, Zeng X T 2006 Chem. Phys. Lett. 425 62
[20] Yi M,Yu S, Feng C, Zhang T, Ma D, Meruvia M S, Hümmelgen I A 2007 Organic Electronics 8 311
[21] Li S H, Xu Z, Yang G, Ma L, Yang Y 2008 Appl. Phys. Lett. 93 213301
[22] Lin Y J, Li Y C, Wen T C, Huang L M, ChenY K, Yeh H J, Wang Y H 2008 Appl. Phys. Lett. 93 043305
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[1] Ohmori Y, Muro K, Onoda M, Yoshinoi K 1992 J. Appl. Phys. 72 207
[2] Liu P, Wu Y L, Li Y N, Zhu S P 2006 J. Am. Chem. Soc. 128 4554
[3] Hu Y C, Dong G F, Wang L D, Liang Y, Qiu Y 2004 Chin. Phys. Lett. 21 723
[4] Di C A, Yu G, Liu Y Q, Guo Y L, Wang Y, Wu W P, Zhu D B 2008 Adv. Mater. 20 1286
[5] Nie G Z, Peng J B, Zhou R L 2011 Acta Phys. Sin. 60 127304 (in Chinese) [ 聂国政, 彭俊彪, 周仁龙 2011 物理学报 60 127304]
[6] Meijer E J, DeLeeuw D M, Setayesh S 2003 Nature Mater. 2 678
[7] Tada K, Harada H, Yoshino K 1996 J. Appl. Phys. 35 L944
[8] Lee S, Koo B, Shin J, Lee E, Park H, Kim H 2006 Appl. Phys. Lett. 88 162109
[9] Zhang X H, Kippelen B 2008 Appl. Phys. Lett. 93 133305
[10] Kuwahara E, Kubozono Y, Hosokawa T, Nagano T, Masunari K, Fujiwara A 2004 Appl. Phys. Lett. 85 4765
[11] Hu Y, Tsubasa K, Hidenori O 2009 Appl. Phys. Lett. 94 023305
[12] Li J, Zhang X W, Zhang L, Haq K, Jiang X Y, Zhu W Q, Zhang Z L 2009 Semicond. Sci. Technol. 24 115012
[13] Liu X Q, Zhang T, Wang L J, Li M Y, Feng C G, Ma D G 2008 Chin. Phys. Lett. 25 758
[14] Li S H, Xu Z, Ma L, Chu C W, Yang Y 2007 Appl. Phys. Lett. 91 083507
[15] Chu C W, Li S H, Chen C W, Shrotriya V, Yang Y 2005 Appl. Phys. Lett. 87 193508
[16] Generali G, Capelli R, Toffanin S, Facchetti A, Michele M 2010 Microelectronics Reliabilit. 50 1861
[17] Ishii H, Sugiyama K, Ito E, Seki K 1999 Adv. Mater. 11 605
[18] Zhao G, Cheng X M, Tian H J, Du B Q, Liang X Y 2011 Chin. Phys. Lett. 28 127203
[19] Hong Z R, Huang Z H, Zeng X T 2006 Chem. Phys. Lett. 425 62
[20] Yi M,Yu S, Feng C, Zhang T, Ma D, Meruvia M S, Hümmelgen I A 2007 Organic Electronics 8 311
[21] Li S H, Xu Z, Yang G, Ma L, Yang Y 2008 Appl. Phys. Lett. 93 213301
[22] Lin Y J, Li Y C, Wen T C, Huang L M, ChenY K, Yeh H J, Wang Y H 2008 Appl. Phys. Lett. 93 043305
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