Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification

Shi Wei-Wei; Li-Wen; Yi Ming-Dong; Xie Ling-Hai; Wei-Wei; Huang Wei

doi:10.7498/aps.61.228502

Abstract

The surface property of the dielectric has a significant influence on growth, morphology, order of the organic semiconductor, and charge carrier transport. The relevant research shows that the mobility of organic field-effect transistor could be effectively improved via ameliorating the surface property of the dielectric. The purpose of this review is to introduce the main factors, including the roughness and the surface energy of dielectric, which exert a tremendous influence on the field effect mobility of OFET, and chiefly describe the progress of the two common methods used for the dielectric modification, viz., the self-assembled monolayer modification and the polymer modification. Finally, the novel applications at present are summarized in this review and some perspectives on the research trend are proposed.

Keywords:

Authors and contacts

1.
Key Laboratory for Organic Electronics & Information Diaplays and Institute of Advanced Materials, Nanjing 210046, China;
2.
Institute of Optoelectronics Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
Funds: Project supported by the National Basic Research Program of China (Grants Nos. 2009CB930600, 2012CB933301, 2012CB723402), the National Natural Science Foundation of China (Grant Nos. 61077070, 21144004, 60977023), the Key Project of Chinese Ministry of Education, China (Grant No. 20113223120003 ), the NSF of Jiangsu Province, China (Grants Nos. BK2011761, SBK201122680), the NSF of the Education Committee of Jiangsu Province, China (Grant No. 11KJB510017), NJUPT (Grants Nos. NY211022, NY210002, NY210030), and the Creative Research Group of Jiangsu College Council (Grant No TJ209035).

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Cited By

[1]	Veres J, Ogier S, Lloyd G, de Leeuw D 2004 Chem. Mater. 16 4543
[2]	Novak M, Ebel A, Meyer-Friedrichsen T, Jedaa A, Vieweg B F, Yang G A, Voitchovsky K, Stellacci F, Spiecker E, Hitsch A, Halik M 2011 Nano Lett. 11 156
[3]	Savage R C, Mativetsky J M, Orgiu E, Palma M, Gbabode G, Geerts Y H, Samori P 2011 J. Mater. Chem. 21 206
[4]	Yoon M H, Kim C, Facchetti A, Marks T J 2006 J. Am. Chem. Soc. 128 12851
[5]	Shekar B C, Lee J Y, Rhee S W 2004 Korean J. Chem. Eng. 21 267
[6]	Chung Y Y, Verploegen E, Vailionis A, Sun Y, Nishi Y, Murmann B, Bao Z A 2011 Nano Lett. 11 1161
[7]	Katsuta S, Miyagi D, Yamada H, Okujima T, Mori S, Nakayama K, Uno H 2011 Org. Lett. 13 1454
[8]	Kim S H, Hong K, Jang M, Jang J, Anthony J E, Yang H, Park C E 2010 Adv. Mater. 22 4809
[9]	Liao K C, Ismail A G, Kreplak L, Schwartz J, Hill I G 2010 Adv. Mater. 22 3081
[10]	Chou W Y, Kuo C W, Chang C W, Yeh B L, Chang M H 2010 J. Mater. Chem. 20 5474
[11]	Liu Y Y, Song C L, Zeng W J, Zhou K G, Shi Z F, Ma C B, Yang F, Zhang H L, Gong X 2010 J. Am. Chem. Soc. 132 16349
[12]	DiBenedetto S A, Facchetti A, Ratner M A, Marks T J 2009 Adv. Mater. 21 1407
[13]	Facchetti A, Yoon M H, Marks T J 2005 Adv. Mater. 17 1705
[14]	Horowitz G 2010 Org. Electron. 223 113
[15]	Dodabalapur A 2006 Mater. Today. 9 24
[16]	Chua L L, Zaumseil J, Chang J F, Ou E C W, Ho P K H, Sirringhaus H, Friend R H 2005 Nature 434 194
[17]	Di C A, Liu Y Q, Yu G, Zhu D B 2009 Accounts. Chem. Res. 42 1573
[18]	Shea P B, Kanicki J, Ono N 2005 J. Appl. Phys. 98 014503
[19]	Liu J, Hennek J W, Buchholz D B, Ha Y G, Xie S J, Dravid V P, Chang R P H, Facchetti A, Marks T J 2011 Adv. Mater. 23 992
[20]	Possanner S K, Zojer K, Pacher P, Zojer E, Schuerrer F 2009 Adv. Funct. Mater. 19 958
[21]	Vissenberg M C J MMatters M 1998 Phys. Rev. B 57 12964
[22]	Watkins N J, Yan L, Gao Y L 2002 Appl. Phys. Lett. 80 4384
[23]	Steudel S, De Vusser S, De Jonge S, Janssen D, Verlaak S, Genoe J, Heremans P 2004 Appl. Phys. Lett. 85 4400
[24]	Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mater. Interfaces 2 391
[25]	Jo P S, Sung J, Park C, Kim E, Ryu D Y, Pyo S, Kim H C, Hong J M 2008 Adv. Funct. Mater. 18 1202
[26]	Chua L L, Ho P K H, Sirringhaus H, Friend R H 2004 Adv. Mater. 16 1609
[27]	Chabinyc M L, Lujan R, Endicott F, Toney M F, McCulloch I, Heeney M 2007 Appl. Phys. Lett. 90 233508
[28]	Miskiewicz P, Kotarba S, Jung J, Marszalek T, Mas-Torrent M, Gomar-Nadal E, Amabilino D B, Rovira C, Veciana J, Maniukiewicz W, Ulanski J 2008 J. Appl. Phys. 104 054509
[29]	Yang H C, Kim S H, Yang L, Yang S Y, Park C E 2007 Adv. Mater. 19 2868
[30]	Yang S Y, Shin K, Park C E 2005 Adv. Funct. Mater. 15 1806
[31]	Virkar A, Mannsfeld S, Oh J H, Toney M F, Tan Y H, Liu G Y, Scott J C, Miller R, Bao Z 2009 Adv. Funct. Mater. 19 1962
[32]	Horowitz G 2003 Synthetic Met. 138 101
[33]	Horowitz G 1998 Adv. Mater. 10 365
[34]	Novak M, Schmaltz T, Faber H, Halik M 2011 Appl. Phys. Lett. 98 093302
[35]	Umeda T, Kumaki D, Tokito S 2009 J. Appl. Phys. 105 024516
[36]	Sun X N, Liu Y Q, Di C A, Wen Y G, Guo Y L, Zhang L, Zhao Y, Yu G 2011 Adv. Mater. 23 1009
[37]	Gao J, Asadi K, Xu J B, An J 2009 Appl. Phys. Lett. 94 093302
[38]	Chou W Y, Kuo C W, Cheng H L, Chen Y R, Tang F C, Yang F Y, Shu D Y, Liao C C 2006 Appl. Phys. Lett. 89 112126
[39]	Ismail A GHill I G 2011 Org. Electron. 12 1033
[40]	Islam M M, Pola S, Tao Y T 2011 ACS Appl. Mater. Interfaces 3 2136
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[43]	Singh K A, Nelson T L, Belot J A, Young T M, Dhumal N R, Kowalewski T, McCullough R D, Nachimuthu P, Thevuthasan S, Porter L M 2011 ACS Appl. Mater. Interfaces 3 2973
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[46]	Lin Y Y, Gundlach D J, Nelson S F, Jackson T N 1997 IEEE T. Electron. Dev. 44 1325
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[63]	Peng X Z, Horowitz G, Fichou D, Garnier F 1990 Appl. Phys. Lett. 57 2013
[64]	Martinelli N G, Savini M, Muccioli L, Olivier Y, Castet F, Zannoni C, Beljonne D, Cornil J 2009 Adv. Funct. Mater. 19 3254
[65]	Sun X N, Di C A, Liu Y Q 2010 J. Mater. Chem. 20 2599
[66]	Kim C, Facchetti A, Marks T J 2007 Adv. Mater. 19 2561
[67]	Kajii H, Ie Y, Nitani M, Hirose Y, Aso Y, Ohmori Y 2010 Org. Electron. 11 1886
[68]	Fritz S E, Kelley T W, Frisbie C D 2005 J. Phys. Chem. B 109 10574
[69]	Shin K, Yang C W, Yang S Y, Jeon H Y, Park C E 2006 Appl. Phys. Lett. 88 072109
[70]	Wang Y, Acton O, Ting G, Weidner T, Shamberge P J, Ma H, Ohuchi F S, Castner D G, Jen A K Y 2010 Org. Electron. 11 1066
[71]	Kim C, Facchetti A, Marks T J 2007 Science 318 76
[72]	Kim S H, Jang M, Yang H, Park C E 2010 J. Mater. Chem. 20 5612
[73]	Sun X, Zhang L, Di C-a, Wen Y, Guo Y, Zhao Y, Yu G, Liu Y 2011 Adv. Mater. 1
[74]	Veres J, Ogier S D, Leeming S W, Cupertino D C, Khaffaf S M 2003 Adv. Funct. Mater. 13 199
[75]	Lu Y X, Lee W H, Lee H S, Jang Y, Cho K 2009 Appl. Phys. Lett. 94 113303
[76]	Hwang D K, Kim C S, Choi J M, Lee K, Park J H, Kim E, Baik H K, Kim J H, Im S 2006 Adv. Mater. 18 2299
[77]	Gelinck G H, Huitema H E A, Van Veenendaal E, Cantatore E, Schrijnemakers L, Van der Putten J, Geuns T C T, Beenhakkers M, Giesbers J B, Huisman B H, Meijer E J, Benito E M, Touwslager F J, Marsman A W, Van Rens B J E, De Leeuw D M 2004 Nat. Mater. 3 106
[78]	McCarthy M A, Liu B, Donoghue E P, Kravchenko I, Kim D Y, So F, Rinzler A G 2011 Science 332 570
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[81]	Sekitani T, Yokota T, Zschieschang U, Klauk H, Bauer S, Takeuchi K, Takamiya M, Sakurai T, Someya T 2009 Science 326 1516
[82]	Dutta S, Lewis S D, Dodabalapur A 2011 Appl. Phys. Lett. 98 213504
[83]	Rogers J A, Bao Z, Baldwin K, Dodabalapur A, Crone B, Raju V R, Kuck V, Katz H, Amundson K, Ewing J, Drzaic P 2001 Proc. Natl. Acad. Sci. U. S. A. 98 4835
[84]	Tobjörk Dösterbacka R 2011 Adv. Mater. 23 1961
[85]	Kim S JLee J S 2010 Nano Lett. 10 2884
[86]	Leong W L, Mathews N, Tan B, Vaidyanathan S, Dotz F, Mhaisalkar S 2011 J. Mater. Chem. 21 5203

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Vol. 61, Issue 22 - 2012-11-20

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