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Vanadium oxide nanotubes are prepared on a Si substrate with hydrothermal method in this experiment with dodecylamine serving as template. X-ray diffraction, Raman spectroscopy and scanning electron microscope (SEM) are employed to characterize the structural and electronic properties of these nanotubes. The results show that the growth of VOX nanotubes and their gas sensing properties are affected by the hydrothermal reaction time rather than mixing time. With longer reaction time, the VOX nanotubes display better properties with smoother walls, stronger gas sensitivity and faster response time (15 s), than with shorter reaction time. SEM results reveal that VOX nanotubes have inner diameters between 25-35 nm and outer diameters between 65-100 nm. The sample inner diameters vary between 25 and 35 nm. The outer diameters are also quite similar in all tubes and lie between 65 and 100 nm.
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Keywords:
- hydrothermal method /
- vanadium oxide /
- growth time /
- gas sensor
[1] Iijima S 1991 Nature J. 354 56
[2] Liu X, Täschner C, Leonhardt A, Rümmeli M H, Pichler T, Gemming T, Büchner B, Knupfer M 2005 Phys. Rev. B 72 115407
[3] Merin F 1959 Phys. Rev. Lett. 13 34
[4] He S, Wei L Y, Fu Q, Lin C, Lei D M, Zheng C M 2003 Wuji Huaxue Xuebao 19 113 (in Chinese) [何山, 韦柳娅, 傅群, 林晨, 雷德铭, 郑臣谋 2003 无机化学学报 19 113]
[5] Sphar M E, Petra S, Nesper R, Haas O, Novák P 1999 J. Electrochem. Soc. 146 2780
[6] Krumeich F, Muhr H J, Niederberger M, Bieri F, Schnyder B, Nesper R 1999 J. Am. Chem. Soc. 121 8324
[7] Petkov V, Zavalij P Y, Lutta S, Whittingham M S, Parvanov V, Shastri S 2004 Phys. Rev. B 69 085410
[8] Kweon H, Lee K W, Lee C E 2008 Appl. Phys. Lett. 93 043105
[9] Sediri F, Touati F, Gharbi N 2007 Mater. Lett. 61 1946
[10] Clark J H 1968 The Chemistry of Titanium and Vanadium (New York: Elsevier Press) pp34-38
[11] Julien C, Nazri G A, Bergstrom O 1997 Phys. Status Solidi B 201 319
[12] Abello L, Husson E, Repelin Y, Lucazeau G 1983 Spectrochim. Acta A 39 641
[13] Dwyer C O, Navas D, Lavayen V, Benavente E, Santa Ana M A, Gonza'lez G, Newcomb S B, Sotomayor Torres C M 2006 Chem. Mater. 18 3016
[14] Chen X, Sun X, Li Y 2002 Inorg. Chem. 41 4527
[15] Trasobares S, Ewels C P, Birrell J, Stephan O, Wei B Q, Carlisle J A, Miller D, Keblinski P, Ajayan P M 2004 Adv. Mater. 16 610
[16] Wolkenstein T 1991 Electronic Processes on Semiconductor Surfaces during Chemisorption (1st Edn.) (NewYork: Plenum Press) pp31-34
[17] Chen W 2010 Ph. D. Dissertation (Wuhan: Wuhan University of Technology) (in Chinese) [陈文 2010 博士学位论文 (武汉:武汉理工大学)]
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[1] Iijima S 1991 Nature J. 354 56
[2] Liu X, Täschner C, Leonhardt A, Rümmeli M H, Pichler T, Gemming T, Büchner B, Knupfer M 2005 Phys. Rev. B 72 115407
[3] Merin F 1959 Phys. Rev. Lett. 13 34
[4] He S, Wei L Y, Fu Q, Lin C, Lei D M, Zheng C M 2003 Wuji Huaxue Xuebao 19 113 (in Chinese) [何山, 韦柳娅, 傅群, 林晨, 雷德铭, 郑臣谋 2003 无机化学学报 19 113]
[5] Sphar M E, Petra S, Nesper R, Haas O, Novák P 1999 J. Electrochem. Soc. 146 2780
[6] Krumeich F, Muhr H J, Niederberger M, Bieri F, Schnyder B, Nesper R 1999 J. Am. Chem. Soc. 121 8324
[7] Petkov V, Zavalij P Y, Lutta S, Whittingham M S, Parvanov V, Shastri S 2004 Phys. Rev. B 69 085410
[8] Kweon H, Lee K W, Lee C E 2008 Appl. Phys. Lett. 93 043105
[9] Sediri F, Touati F, Gharbi N 2007 Mater. Lett. 61 1946
[10] Clark J H 1968 The Chemistry of Titanium and Vanadium (New York: Elsevier Press) pp34-38
[11] Julien C, Nazri G A, Bergstrom O 1997 Phys. Status Solidi B 201 319
[12] Abello L, Husson E, Repelin Y, Lucazeau G 1983 Spectrochim. Acta A 39 641
[13] Dwyer C O, Navas D, Lavayen V, Benavente E, Santa Ana M A, Gonza'lez G, Newcomb S B, Sotomayor Torres C M 2006 Chem. Mater. 18 3016
[14] Chen X, Sun X, Li Y 2002 Inorg. Chem. 41 4527
[15] Trasobares S, Ewels C P, Birrell J, Stephan O, Wei B Q, Carlisle J A, Miller D, Keblinski P, Ajayan P M 2004 Adv. Mater. 16 610
[16] Wolkenstein T 1991 Electronic Processes on Semiconductor Surfaces during Chemisorption (1st Edn.) (NewYork: Plenum Press) pp31-34
[17] Chen W 2010 Ph. D. Dissertation (Wuhan: Wuhan University of Technology) (in Chinese) [陈文 2010 博士学位论文 (武汉:武汉理工大学)]
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