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In this paper, the hole effective mass along arbitrarily k wavevector direction and the hole isotropic effective masses in strained Ge/(001)(101)(111)Si1-xGex are obtained with in the frame work of kp theory. It is found that the hole effective mass of the top valence band along [010] wave vector decreases obviously with stress increasing and its absolute value is smallest. The hole effective mass of the second valence band tends to gently decrease with stress increasing, and is not significant in magnitude. Compared with the existing isotropic effective quality, the result obtained in this paper is proved to be correct.
[1] Bedell S W, Daval N, Khakifirooz A 2011 Microelectron 88 324
[2] Yang Y J, Ho W S, Huang C F 2007 Appl. Phys. Lett. 91 102103
[3] Claeys C, Simoen E (Translated by Tu H L et al.) 2010 Semiconductor Ge Material and Devices (Beijing: Metallurgical Industry Press) p326 [克莱 C, 西蒙 E著 (屠海令等译) 2010 半导体锗材料与器件 (北京: 冶金工业出版社) 第326页]
[4] Lee M L, Leitz C W, Cheng Z, Pitera A J, Langdo T, Currie M T, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 Appl. Phys. Lett. 79 3344
[5] Shang H, Chu J Q, Wang X, Mooney P M, Lee K, Ott J, Rim K, Chan K, Guarini K, Ieong M 2004 VLSI Symp. Tech. Dig. p204
[6] International Technology Working Group (Translated by Wei G) 2010 China Integrated Circult 131 17 (in Chinese) [国际技术工作组(为国译) 2010 中国集成电路 131 17]
[7] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 物理学报 57 5918]
[8] Fischetti M V, Laux S E 1996 J. Appl. Phys. 80 2234
[9] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (6th Ed.) (Beijing: Publishing House of Electronics Industry) pp18-23 [刘恩科,朱秉升, 罗晋生 2003 半导体物理学(第6版) (北京:电子工业出版社) 第18—23页]
[10] Dai X Y, Yang C, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137103 (in Chinese) [戴显英,杨程,宋建军,张鹤鸣,郝跃,郑若川 2012 物理学报 61 137103]
[11] Li M F 1998 Semiconductor Physics (Beijing: Science Press) p64 [李名复 1998 半导体物理学 (北京:科学出版社) 第64页]
[12] Kasper E (Translated by Yu J Z) 2002 Properties of Strained and Relaxed Silicon Germanium (Beijing: National Defence Industrial Press) [Erich Kasper (余金中译) 2002 硅锗的性质 (北京: 国防工业出版社)]
[13] Gu Z Y, Tian L L, Fu L W 1995 Semiconductor Physics (Beijing: Electronics Industry Press) (in Chinese) p46 [顾祖毅, 田立林, 富力文 1995 半导体物理学(北京: 电子工业出版社) 第46页]
[14] Lee Minjoo L, Fitzgerald Eugene A 2003 Appl. Phys. Lett. 83 4202
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[1] Bedell S W, Daval N, Khakifirooz A 2011 Microelectron 88 324
[2] Yang Y J, Ho W S, Huang C F 2007 Appl. Phys. Lett. 91 102103
[3] Claeys C, Simoen E (Translated by Tu H L et al.) 2010 Semiconductor Ge Material and Devices (Beijing: Metallurgical Industry Press) p326 [克莱 C, 西蒙 E著 (屠海令等译) 2010 半导体锗材料与器件 (北京: 冶金工业出版社) 第326页]
[4] Lee M L, Leitz C W, Cheng Z, Pitera A J, Langdo T, Currie M T, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 Appl. Phys. Lett. 79 3344
[5] Shang H, Chu J Q, Wang X, Mooney P M, Lee K, Ott J, Rim K, Chan K, Guarini K, Ieong M 2004 VLSI Symp. Tech. Dig. p204
[6] International Technology Working Group (Translated by Wei G) 2010 China Integrated Circult 131 17 (in Chinese) [国际技术工作组(为国译) 2010 中国集成电路 131 17]
[7] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 物理学报 57 5918]
[8] Fischetti M V, Laux S E 1996 J. Appl. Phys. 80 2234
[9] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (6th Ed.) (Beijing: Publishing House of Electronics Industry) pp18-23 [刘恩科,朱秉升, 罗晋生 2003 半导体物理学(第6版) (北京:电子工业出版社) 第18—23页]
[10] Dai X Y, Yang C, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137103 (in Chinese) [戴显英,杨程,宋建军,张鹤鸣,郝跃,郑若川 2012 物理学报 61 137103]
[11] Li M F 1998 Semiconductor Physics (Beijing: Science Press) p64 [李名复 1998 半导体物理学 (北京:科学出版社) 第64页]
[12] Kasper E (Translated by Yu J Z) 2002 Properties of Strained and Relaxed Silicon Germanium (Beijing: National Defence Industrial Press) [Erich Kasper (余金中译) 2002 硅锗的性质 (北京: 国防工业出版社)]
[13] Gu Z Y, Tian L L, Fu L W 1995 Semiconductor Physics (Beijing: Electronics Industry Press) (in Chinese) p46 [顾祖毅, 田立林, 富力文 1995 半导体物理学(北京: 电子工业出版社) 第46页]
[14] Lee Minjoo L, Fitzgerald Eugene A 2003 Appl. Phys. Lett. 83 4202
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