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In this article we report on the green-light wavelength InGaN/AlN quantum dots (QDs) grown by molecular beam epitaxy, and propose a method to determine the composition of the InGaN QDs by combining reflection high-energy electron diffraction in-situ measurement and photoluminescence measurement, in which the strain relaxation and the influences of strain and quantum-confined Stark effect on the exciton energy are taken into consideration.
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Keywords:
- InGaN /
- quantum dots /
- reflection high-energy electron diffraction
[1] Grandjean N, Damilano B, Massies J 2000 Proceedings of the International Workshop on Nitride Semiconductors Nagoya, Japan, November 30, 2000 pp397-402
[2] Kraus A, Hammadi S, Hisek J, Buβ R, Jonen H, Bremers H, Rossow U, Sakalauskas E, Goldhahn R, Hangleiter A 2011 Journal of Crystal Growth 323 72
[3] Bayram C, Razeghi M 2009 Appl. Phys. A 96 403
[4] Ding Z B, Wang K, Wang H, Chen T X, Yao S D, Wang Q, Zhang G Y 2007 Acta Phys. Sin. 56 2877 (in Chinese) [丁志博,王坤,王欢,陈田祥,姚淑德,王琦,张国义 2007 物理学报 56 2877]
[5] Lü W B, Wang L, Wang J X, Hao Z B, Luo Y 2011 Chin. Phys. Lett. 28 128101
[6] Bottcher T, Einfeldt S, Kirchner V, Figge S, Heinke H, Hommel D, Selke H, Ryder P L 1998 Appl. Phys. Lett. 703 3232
[7] Kim H J, Na H, Kwon S Y, Seo H C, Kim H J, Shin Y, Lee K H, Kim D H, Oh H J, Yoon S, Sone C, Park Y, Yoon E 2004 J. Cryst. Grow. 269 95
[8] Kawamura T, Maksym P A 2011 Journal of Philosophy, Science and Law 80 63602
[9] Schuster M, Gervais P O, Jobst B, Hosler W, Averbeck R, Riechert H, Iberl A, Stomme R 1999 J. Phys. D: Appl. Phys 32 A56
[10] Huang J S, Chen Z, Luo X D, Xu Z Y, Ge W K 2004 J. Cryst. Growth 260 13
[11] Ramirez-Morales A, Martinez-Orozco J C, Rodriguez-Vargas I 2011 J. Appl. Phys. 110 103715
[12] Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[13] Yan Q, Rinke P, Scheffler M, van de Walle C G 2009 Appl. Phys. Lett. 95 121111
[14] Niu L, Hao Z B, Hu J N, Hu Y B, Wang L, Luo Y 2011 Nanoscale Research Letters 6 611
[15] Singh R, Doppalapudi D, Moustakas T D, Romano L T 1997 Appl. Phys. Lett. 70 1089
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[1] Grandjean N, Damilano B, Massies J 2000 Proceedings of the International Workshop on Nitride Semiconductors Nagoya, Japan, November 30, 2000 pp397-402
[2] Kraus A, Hammadi S, Hisek J, Buβ R, Jonen H, Bremers H, Rossow U, Sakalauskas E, Goldhahn R, Hangleiter A 2011 Journal of Crystal Growth 323 72
[3] Bayram C, Razeghi M 2009 Appl. Phys. A 96 403
[4] Ding Z B, Wang K, Wang H, Chen T X, Yao S D, Wang Q, Zhang G Y 2007 Acta Phys. Sin. 56 2877 (in Chinese) [丁志博,王坤,王欢,陈田祥,姚淑德,王琦,张国义 2007 物理学报 56 2877]
[5] Lü W B, Wang L, Wang J X, Hao Z B, Luo Y 2011 Chin. Phys. Lett. 28 128101
[6] Bottcher T, Einfeldt S, Kirchner V, Figge S, Heinke H, Hommel D, Selke H, Ryder P L 1998 Appl. Phys. Lett. 703 3232
[7] Kim H J, Na H, Kwon S Y, Seo H C, Kim H J, Shin Y, Lee K H, Kim D H, Oh H J, Yoon S, Sone C, Park Y, Yoon E 2004 J. Cryst. Grow. 269 95
[8] Kawamura T, Maksym P A 2011 Journal of Philosophy, Science and Law 80 63602
[9] Schuster M, Gervais P O, Jobst B, Hosler W, Averbeck R, Riechert H, Iberl A, Stomme R 1999 J. Phys. D: Appl. Phys 32 A56
[10] Huang J S, Chen Z, Luo X D, Xu Z Y, Ge W K 2004 J. Cryst. Growth 260 13
[11] Ramirez-Morales A, Martinez-Orozco J C, Rodriguez-Vargas I 2011 J. Appl. Phys. 110 103715
[12] Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[13] Yan Q, Rinke P, Scheffler M, van de Walle C G 2009 Appl. Phys. Lett. 95 121111
[14] Niu L, Hao Z B, Hu J N, Hu Y B, Wang L, Luo Y 2011 Nanoscale Research Letters 6 611
[15] Singh R, Doppalapudi D, Moustakas T D, Romano L T 1997 Appl. Phys. Lett. 70 1089
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