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Gate length dependence of SOI NMOS device response to total dose irradiation

Peng Li Zhuo Qing-Qing Liu Hong-Xia Cai Hui-Min

Citation:

Gate length dependence of SOI NMOS device response to total dose irradiation

Peng Li, Zhuo Qing-Qing, Liu Hong-Xia, Cai Hui-Min
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  • Abstract views:  7818
  • PDF Downloads:  686
  • Cited By: 0
Publishing process
  • Received Date:  06 June 2012
  • Accepted Date:  10 July 2012
  • Published Online:  05 December 2012

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