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The n-type Si-rich SiNx film is deposited on a p-type crystalline Si (c-Si) substrate by facing target sputtering technique, and the Si-rich SiNx/c-Si heterojunction device is finally formed. The heterojunction device shows a high rectification ratio (1.3 103 at 2 V) at room temperature. Three distinct regions of temperature-dependence J-V characteristic curve can be identified, where different current density variations are indicated. In the low voltage range the current follows Ohmic behavior. In the intermediate range of voltage the current is governed by tunneling and recombination process, while space-charge-limited current (SCLC), with an exponential distribution of trapping states, dominates the conduction mechanism in the relatively high voltage range.
[1] Park N M, Choi C J, Seong T Y, Park S J 2001 Phys. Rev. Lett. 86 1355
[2] Dal Negro L, Yi J H, Kimerling L C, Hamel S, Williamson A, Galli G 2006 Appl. Phys. Lett. 88 183103
[3] Makarova M, Vuckovic J, Sanda H, Nishi Y 2006 Appl. Phys. Lett. 89 221101
[4] Wang M, Xie M, Ferraioli L, Yuan Z, Li D, Yang D, Pavesi L 2008 J. Appl. Phys. 104 083504
[5] Chen L Y, Chen W H, Hong F C N 2005 Appl. Phys. Lett. 86 193506
[6] Huang R, Chen K J, Han P G, Dong H P, Wang X, Chen D Y, Li W, Xu J, Ma Z Y, Huang X F 2007 Appl. Phys. Lett. 90 093515
[7] Warga J, Li R, Basu S N, Negro D 2008 Appl. Phys. Lett. 93 151116
[8] Cen Z H, Chen T P, Ding L, Liu Y, Wong J I, Yang M, Liu Z, Goh W P, Zhu F R, Fung S 2009 Appl. Phys. Lett. 94 041102
[9] Li A P, Zhang L, Zhang Y X, Qin G G, Wang X, Hu X W 1996 Appl. Phys. Lett. 69 4
[10] Zingway Pei, Chang Y R, Hwang H L 2002 Appl. Phys. Lett. 80 2839
[11] Huang R, Song J, Wang X, Guo Y Q, Song C, Zheng Z H, Wu X L, Chu P K 2012 Opt. Lett. 37 692
[12] Wang M, Huang J, Yuan Z, Anopchenko A, Li D, Yang D, Pavesi L 2008 J. Appl. Phys. 104 083505
[13] Zhang J Q, Feng L H, Cai W, Zheng J G, Cai Y P, Li B, Wu L L, Shao Y 2002 Thin Solid Films 414 113
[14] Song D Y, Cho E C, Conibeer G, Huang Y D, Martin A 2007 Appl. Phys. Lett. 91 123510
[15] Xu G Y, Wang T M, Wang G L 2001 J. Functional Materials and Devices 7 0045 (in Chinese) [徐刚毅, 王天民, 王金良 2001 功能材料与器件学报 7 0045]
[16] Casey H C, Muth J, Krishnankutty S, Zavada J M 1996 Appl. Phys. Lett. 68 2867
[17] Perlin P, Osinski M, Eliseev P G, Smagley V A, Mu J, Banas M, Sartori P 1996 Appl. Phys. Lett. 69 1680
[18] Cen Z H, Chen T P, Ding L, Liu Y, Wong J I, Yang M, Liu Z, Goh W P, Zhu F R, Fung S 2009 J. Appl. Phys. 105 123101
[19] Yu X K, Shao L, Chen Q Y, Trombetta L, Wang C Y, Dharmaiahgari B, Wang X M, Chen H, Ma K B, Liu J R, Ch W K 2006 Nucl. Instrum. Methods Phys. Res. B 249 414
[20] Mark P, Helfrich W 1962 J. Appl. Phys. 33, 205
[21] Ratiq M A, Tsuchiya Y, Mizuta H, Oda S, Uno S, Durrani Z A K, Milne W I 2005 Appl. Phys. Lett. 87 182101
[22] Shen Z, Kortshagen U, Campbell S A 2004 J. Appl. Phys. 96 2204
[23] Furukawa S, Kagawa T, Matsumoto N 1982 Solid State Commun 44 927
[24] Kumar V, Jain S C, Kapoora A K, Poortmans J, Mertens R 2003 J. Appl. Phys. 94 1283
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[1] Park N M, Choi C J, Seong T Y, Park S J 2001 Phys. Rev. Lett. 86 1355
[2] Dal Negro L, Yi J H, Kimerling L C, Hamel S, Williamson A, Galli G 2006 Appl. Phys. Lett. 88 183103
[3] Makarova M, Vuckovic J, Sanda H, Nishi Y 2006 Appl. Phys. Lett. 89 221101
[4] Wang M, Xie M, Ferraioli L, Yuan Z, Li D, Yang D, Pavesi L 2008 J. Appl. Phys. 104 083504
[5] Chen L Y, Chen W H, Hong F C N 2005 Appl. Phys. Lett. 86 193506
[6] Huang R, Chen K J, Han P G, Dong H P, Wang X, Chen D Y, Li W, Xu J, Ma Z Y, Huang X F 2007 Appl. Phys. Lett. 90 093515
[7] Warga J, Li R, Basu S N, Negro D 2008 Appl. Phys. Lett. 93 151116
[8] Cen Z H, Chen T P, Ding L, Liu Y, Wong J I, Yang M, Liu Z, Goh W P, Zhu F R, Fung S 2009 Appl. Phys. Lett. 94 041102
[9] Li A P, Zhang L, Zhang Y X, Qin G G, Wang X, Hu X W 1996 Appl. Phys. Lett. 69 4
[10] Zingway Pei, Chang Y R, Hwang H L 2002 Appl. Phys. Lett. 80 2839
[11] Huang R, Song J, Wang X, Guo Y Q, Song C, Zheng Z H, Wu X L, Chu P K 2012 Opt. Lett. 37 692
[12] Wang M, Huang J, Yuan Z, Anopchenko A, Li D, Yang D, Pavesi L 2008 J. Appl. Phys. 104 083505
[13] Zhang J Q, Feng L H, Cai W, Zheng J G, Cai Y P, Li B, Wu L L, Shao Y 2002 Thin Solid Films 414 113
[14] Song D Y, Cho E C, Conibeer G, Huang Y D, Martin A 2007 Appl. Phys. Lett. 91 123510
[15] Xu G Y, Wang T M, Wang G L 2001 J. Functional Materials and Devices 7 0045 (in Chinese) [徐刚毅, 王天民, 王金良 2001 功能材料与器件学报 7 0045]
[16] Casey H C, Muth J, Krishnankutty S, Zavada J M 1996 Appl. Phys. Lett. 68 2867
[17] Perlin P, Osinski M, Eliseev P G, Smagley V A, Mu J, Banas M, Sartori P 1996 Appl. Phys. Lett. 69 1680
[18] Cen Z H, Chen T P, Ding L, Liu Y, Wong J I, Yang M, Liu Z, Goh W P, Zhu F R, Fung S 2009 J. Appl. Phys. 105 123101
[19] Yu X K, Shao L, Chen Q Y, Trombetta L, Wang C Y, Dharmaiahgari B, Wang X M, Chen H, Ma K B, Liu J R, Ch W K 2006 Nucl. Instrum. Methods Phys. Res. B 249 414
[20] Mark P, Helfrich W 1962 J. Appl. Phys. 33, 205
[21] Ratiq M A, Tsuchiya Y, Mizuta H, Oda S, Uno S, Durrani Z A K, Milne W I 2005 Appl. Phys. Lett. 87 182101
[22] Shen Z, Kortshagen U, Campbell S A 2004 J. Appl. Phys. 96 2204
[23] Furukawa S, Kagawa T, Matsumoto N 1982 Solid State Commun 44 927
[24] Kumar V, Jain S C, Kapoora A K, Poortmans J, Mertens R 2003 J. Appl. Phys. 94 1283
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